RT1C3904-T12
Abstract: RT1C3904 c10A TRANSISTOR
Text: RT1C3904-T12 PRELIMINARY Notice:this is not a final specification. Some parametric limits are subject to change. Transistor For General purpose Application Silicon NPN Epitaxial Type RT1C3904 is a one chip transistor. OUTLINE DRAWING UNIT:mm FEATURE 0.5 ・Mini package for easy mounting.
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RT1C3904-T12
RT1C3904
SC-59
O-236
RT1C3904-T12
c10A TRANSISTOR
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MO-187
Abstract: ZXT12N20DX ZXT12N20DXTA ZXT12N20DXTC
Text: ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12N20DX
MO-187
ZXT12N20DX
ZXT12N20DXTA
ZXT12N20DXTC
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t12n50dx
Abstract: T12N50 MO-187 ZXT12N50DXTC ZXT12N50DX ZXT12N50DXTA DSA0037450
Text: ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12N50DX
t12n50dx
T12N50
MO-187
ZXT12N50DXTC
ZXT12N50DX
ZXT12N50DXTA
DSA0037450
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a1169
Abstract: t1202 7518 SFT1202
Text: SFT1202 Ordering number : ENA1169 SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •
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SFT1202
ENA1169
A1169-4/4
a1169
t1202
7518
SFT1202
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ENA1168
Abstract: SFT1201 A1168 t1201 T-1201
Text: SFT1201 Ordering number : ENA1168 SANYO Semiconductors DATA SHEET SFT1201 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •
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SFT1201
ENA1168
A1168-4/4
ENA1168
SFT1201
A1168
t1201
T-1201
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Untitled
Abstract: No abstract text available
Text: SFT1202 Ordering number : ENA1169A SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • •
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SFT1202
ENA1169A
A1169-9/9
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Untitled
Abstract: No abstract text available
Text: SFT1202 Ordering number : ENA1169A SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • •
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ENA1169A
SFT1202
400ent,
A1169-9/9
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1169A SFT1202 Bipolar Transistor http://onsemi.com 150V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process
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ENA1169A
SFT1202
A1169-9/9
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transistor D 2578
Abstract: BFQ34
Text: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION
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BFQ34
transistor D 2578
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D 823 transistor
Abstract: transistor PH ON 823 m
Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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OT223
BFG31.
BFG97
D 823 transistor
transistor PH ON 823 m
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T12N50
Abstract: 69 PIC transistor
Text: ZETEX ZXT12N50DX SuperS0T4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=50V; Rsat = 45m il; lc= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assembly techniques to give
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ZXT12N50DX
T12N50
69 PIC transistor
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SILICON COMPLEMENTARY transistors darlington
Abstract: CZT122 CZT127
Text: C Z T122 C ZT127 Central" NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CZT122
CZT127
OT-223
CZT122,
500mA
CZT122)
CZT127)
SILICON COMPLEMENTARY transistors darlington
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LEE1015T
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T P IN N IN G -S O T122A FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency
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LEE1015T
OT122A
LEE1015T
SC15
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philips resistor 2322 763
Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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BFG97
OT223
BFG31.
OT223
philips resistor 2322 763
bfg97 scattering
BFG97
D 1413 transistor
BFG31
UBB774
PH ON 823
TRANSISTOR BFg97
24C1S
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mcd206
Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead
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BLV13
OT123
PINNING-SOT123
MCD210
MBA451
MCD211
mcd206
philips Trimmer 60 pf
BLV13
MCD211
C106W
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transistor d 1991 ar
Abstract: No abstract text available
Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY91C/01
T122F1
OT122F
bb53131
transistor d 1991 ar
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Untitled
Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A
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BUT12/12A
BUT12
300ns,
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BUT12A
Abstract: BUT12 PC100-W
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A
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BUT12/12A
BUT12
BUT12A
100mA,
10perature
300ns,
BUT12A
PC100-W
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L25-M
Abstract: l25m BUT 1 BUT12
Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse
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BUT12/12
O-220
100mA,
L25-M
l25m
BUT 1
BUT12
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AN5296 Application note CA3018
Abstract: CA3016 CA3018 12 Pin Metal Can CA3018A an5296 ca3018 an5296 AN5296 application note
Text: -GA3018, CA3018A lîC T Général Purpose Transistor Arrays November 1996 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.
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-GA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
CA3016
12 Pin Metal Can
an5296 ca3018
an5296
AN5296 application note
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage
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BC372
250mA
001G35S
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC flt. DeT| fl3t.flt.02 ODOESST D | 112 T - ^ 3 '¿>5 ELEMENT NUMBER HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 ,0 0 0 À Aluminum FO RM ERLY 12 Collector: Polished Silicon
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305mm)
500pF
500pF
SDT12301-SD
T12303,
2N6561,
2N6563
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AN5296 Application note CA3018
Abstract: AN5296 Application of the CA3018 Integrated AN5296 Application of the CA3018 an5296 Harris CA3018 CA3018 CA3018A AN5296 application note an5296 ca3018 Darlington pair IC
Text: CA3018, CA3018A January 1999 File Number 338.5 GeneraI Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington
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CA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
AN5296 Application of the CA3018
an5296
Harris CA3018
AN5296 application note
an5296 ca3018
Darlington pair IC
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PMSS3904 Philips SOT323
Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
Text: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3
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bbS3T31
25CJ2E
PMSS3904
OT323
MAM062
bbS3T31
PMSS3904 Philips SOT323
transistor p04
p04 transistor
PMSS3904
MARKING CODE D4t
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