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    NPN TRANSISTOR TO92 25V Search Results

    NPN TRANSISTOR TO92 25V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR TO92 25V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC368

    Abstract: transistor npn Vcbo 25V
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC368 ISSUE 1 – SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage


    Original     		PDF BC368 100mA* 500mA, 100MHz BC368 transistor npn Vcbo 25V

    318MHZ

    Abstract: MPSH10 MPSH10P CTO-92
    Text: NPN SILICON PLANAR RF TRANSISTOR MPSH10 ISSUE 3 – NOVEMBER 94 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz B E C TO92 REFER TO MPSH10P FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage


    Original     		PDF MPSH10 650MHz 500MHz MPSH10P 100MHz 318MHZ MPSH10 CTO-92

    NPN Transistor TO92 25v

    Abstract: MPS6601 transistor mps6601 CTO-92
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR MPS6601 ISSUE 2 – NOVEMBER 94 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 4 V Continuous Collector Current


    Original     		PDF MPS6601 100mA* 500mA, 100mA, 100MHz NPN Transistor TO92 25v MPS6601 transistor mps6601 CTO-92

    2N3904

    Abstract: transistor 2n3904
    Text: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSP6520/6521 625mW 2N3904 625mW KSP6521BU KSP6521NBU transistor 2n3904

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    bc337

    Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.  ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF PN2222A 500mA. PN2222AL-AB3-R PN2222AG-AB3-R PN2222AL-T92-R PN2222AG-T92-R PN2222AL-T92-B PN2222AG-T92-B PN2222AL-T92-K PN2222AG-T92-K

    NPN transistor 500ma TO-92

    Abstract: PN2222A to-92 PN2222A-T92-B PN2222AL PN2222A equivalent PN2222A PN2222A-AB3-R PN2222AL-T92-B
    Text: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: PN2222AL „ ORDERING INFORMATION


    Original     		PDF PN2222A 500mA. PN2222AL PN2222A-AB3-R PN2222AL-AB3-R PN2222A-T92-B PN2222AL-T92-B PN2222A-T92-K PN2222AL-T92-K OT-89 NPN transistor 500ma TO-92 PN2222A to-92 PN2222A-T92-B PN2222AL PN2222A equivalent PN2222A PN2222A-AB3-R PN2222AL-T92-B

    BC33740BU

    Abstract: bc338 npn bc338 signal transistor bc337 fairchild BC338N
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 BC33840TA BC33740BU npn bc338 signal transistor bc337 fairchild BC338N

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B

    PN2222AG

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF PN2222A 500mA. PN2222AL-AB3-R PN2222AG-AB3-R PN2222AL-T92-B PN2222AG-T92-B PN2222AL-T92-K PN2222AG-T92-K OT-89 QW-R208-022 PN2222AG

    PN2222AG

    Abstract: PN2222AL-T92-B PN2222A PN2222A-AB3-R PN2222A-T92-B 022D
    Text: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. „ ORDERING INFORMATION Normal PN2222A-AB3-R PN2222A-T92-B


    Original     		PDF PN2222A 500mA. PN2222A-AB3-R PN2222A-T92-B PN2222A-T92-K PN2222AL-AB3-R PN2222AL-T92-B PN2222AL-T92-K PN2222AG-AB3-R PN2222AG-T92-B PN2222AG PN2222AL-T92-B PN2222A PN2222A-AB3-R PN2222A-T92-B 022D

    OF TRANSISTOR BC338

    Abstract: BC33825TA BC338
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC338 BC33825TA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.


    Original     		PDF HE8050 HE8050 HE8550 HE8050G-x-AB3-R OT-89 HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K

    MURS1100

    Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
    Text: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3


    Original     		PDF MAX1865T 1000uF VP4-0047 680uF 330uF FZT749 EC10QS06 MURS1100 FDS6912A MURS1100 SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100

    2n4401 052

    Abstract: 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4401L


    Original     		PDF 2N4401 2N4401 500mA. 2N4401L 2N4401-T92-B 2N4401L-T92-B 2N4401-T92-K 2N4401L-T92-K 2N4401L-T92-R QW-R201-052 2n4401 052 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor

    s9013

    Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 SS9013FBU SS9013FTA SS9013FTF s9013 transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 S9013 TO92 SS9013-HBU S9013 to-92

    BC337L

    Abstract: NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L
    Text: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF BC337/BC338 BC327/328 BC337L-x-T92-B BC337G-x-T92-B BC337L-x-T92-K BC337G-x-T92-K BC337L-x-T92-R BC337G-x-T92-R BC338L-x-T92-B BC338G-x-T92-B BC337L NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L

    transistor SS9013

    Abstract: ss9012 cross
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 transistor SS9013 ss9012 cross

    Untitled

    Abstract: No abstract text available
    Text: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O | 7^ 4142 0007331 3 | NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPS6601 625mW T-29-21

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS6560 D | TTbmMZ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEo=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage


    OCR Scan     		PDF MPS6560 625mW T-29-21

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic


    OCR Scan     		PDF MPS6520 T-29-21 625mW 2N3904

    ic LM 356 equivalent

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D I 7^4142 0007321 0 I T ~ * J ~ 2 ,/ NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTÖR • Collector-Em itter Voltage: Veto =25V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPS5172 625mW MPSA10 ic LM 356 equivalent