Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B100Y
OT439A
100A101KP50X
MX0912B100Y;
MZ0912B100Y
MGK067
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RX1214
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common-base class C
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RX1214B80W;
RX1214B130Y
RX1214B80W
MGA258
RX1214
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bc547 philips
Abstract: NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 r17a transistor t13 mosfet current limiter BD438 equivalent BD680
Text: Application Note I C s f o r M o t o r C o n t r o l TDA5142 output driver stages for supply voltages up to 30 V Report No: EIE/AN93013 R. Galema Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Motor Control TDA5142 Date : 27 June 1995
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TDA5142
EIE/AN93013
TDA5142
TDA514x
sta43
BZX79C8V2)
BYV10-40
bc547 philips
NPN transistor BC547 as a diode
Application Note tda5142
R27 transistor
BC547
r17a
transistor t13
mosfet current limiter
BD438 equivalent
BD680
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erie feedthrough capacitors
Abstract: MX0912B100Y MZ0912B100Y SC15
Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEA TUR ES PIN NING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V SW R
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OCR Scan
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MX0912B100Y;
MZ0912B100Y
MX0912B100Y
OT439A
OT439A.
OT443A.
erie feedthrough capacitors
MZ0912B100Y
SC15
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DRT2-ID32SLH
Abstract: DRT2-ID32SLH-1 DRT2-ID32SL DRT2-ID16SL DRT2-ID16 gas solenoid valve OMRON PROXIMITY SWITCH AWG16 DRT2-OD32SLH-1 DRT2-OD16SLH
Text: Screw-less Clamp Terminals with Transistors DRT2-@D16SL H (-1)/@D32SLH(-1) Reduced Wiring and Labor on Factory Sites with Screw-less Terminal Wiring • Screw-less structure eliminates tightening work. • Detachable terminal blocks for easier maintenance.
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D16SL
D32SLH
AWG24
AWG16
DRT2-ID32SLH
DRT2-ID32SLH-1
DRT2-ID32SL
DRT2-ID16SL
DRT2-ID16
gas solenoid valve
OMRON PROXIMITY SWITCH
AWG16
DRT2-OD32SLH-1
DRT2-OD16SLH
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MBC725
Abstract: RX1214B130Y RX1214B80W SC15
Text: DISCRETE SEMICONDUCTORS RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer
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RX1214B80W;
RX1214B130Y
MBC725
RX1214B130Y
RX1214B80W
SC15
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PDF
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SOT89-3D
Abstract: microwave product SOT89 PNP marking GA SOT89 MARKING CODE 43 symbian BFN18 BFN19 C166 BFN16
Text: BFN18 NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 2010-10-13 RF & Protection Devices Edition 2010-10-13 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BFN18
OT89-PO
OT89-FP
BAW78D
OT89-TP
SOT89-3D
microwave product
SOT89 PNP marking GA
SOT89 MARKING CODE 43
symbian
BFN18
BFN19
C166
BFN16
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OPA03
Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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4169B
OPA03
OPA02
128 x 1 multiplexer
hep silicon diode
DMILL
BGP02
calorimeter sensor CIRCUIT
inverter grade SCR
BGP01
digital SUN SENSOR cmos detector space radiation
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OPA03
Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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BFG425W
Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power
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BFG425W
BFG21W
BFG21W
603508/01/pp12
amplifier 2606
BFG425
STR 6507
texas rf power transistor
transistor bf 203
PHILIPS TRANSISTORS
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RX1214B130Y
Abstract: RX1214B80W
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
SCA53
127147/00/02/pp12
RX1214B130Y
RX1214B80W
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Motorola transistor smd marking codes
Abstract: STMicroelectronics smd marking code TRANSISTOR SMD MARKING CODE 1a SMD codes smd zener diode colour code smd transistor equivalent table maxim smd code Zener diode smd marking codes colour code diode zener SMD code
Text: SMD Codes and Markings Written by TKB-4u.com SMD Codes and Markings Identifying the manufacturers' type number of an SMD device from the package code can be a difficult ta SMD devices are, by their very nature, too small to carry conventional semiconductor type
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Luxeon K2 driver schematic
Abstract: Luxeon 3w LED DATASHEET Luxeon driver schematic BJT 2222 Luxeon 3w Led driver 10W schematic design ideas AN48 FCX619 FMMT619
Text: AN48 Getting more out of the ZXLD1350 - high output current Ray Liu, Systems Engineer, Zetex Semiconductors Introduction The ZXLD1350 is a continuous mode inductive step-down converter, designed for driving single or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage.
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ZXLD1350
350mA.
700mA
D-81541
Luxeon K2 driver schematic
Luxeon 3w LED DATASHEET
Luxeon driver schematic
BJT 2222
Luxeon 3w
Led driver 10W schematic
design ideas
AN48
FCX619
FMMT619
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power amplifier circuit diagram with pcb layout
Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are
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BFG480W
BFG480W,
BFG400
MGS765
MGS766
power amplifier circuit diagram with pcb layout
PH ON 4307
2.45 Ghz power amplifier 45 dbm
2.45 Ghz power amplifier
BFG480W
amplifier TRANSISTOR 12 GHZ
power amplifier circuit diagram with pcb layout 2
Um 3562
BC817
2.45 Ghz power amplifier 30 db
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MX0912B100Y
Abstract: MZ0912B100Y philips capacitor 470
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
SCA53
127147/00/02/pp12
MX0912B100Y
MZ0912B100Y
philips capacitor 470
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Untitled
Abstract: No abstract text available
Text: L6219 Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■
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L6219
PDIP24
L6219
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ST L6219 application note
Abstract: l6219 microstepping bipolar stepper motor circuit using L6219 power tube 67.5v E-L6219 E-L6219DS E-L6219DS013TR JESD97 L6219 PDIP24
Text: L6219 Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■
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L6219
PDIP24
L6219
ST L6219 application note
l6219 microstepping
bipolar stepper motor circuit using L6219
power tube 67.5v
E-L6219
E-L6219DS
E-L6219DS013TR
JESD97
PDIP24
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Untitled
Abstract: No abstract text available
Text: L6219DSA Stepper motor driver for automotive range Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes
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L6219DSA
L6219DSA
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7.5 stepper motor
Abstract: E-L6219DS E-L6219DSATR L6219DS E-L6219DSA JESD97 L6219DSA SO24
Text: L6219DSA Stepper motor driver for automotive range Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes
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L6219DSA
L6219DSA
7.5 stepper motor
E-L6219DS
E-L6219DSATR
L6219DS
E-L6219DSA
JESD97
SO24
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PDF
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740C3
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
MX0912B100Y
OT439
OT443
740C3
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E-L6219R
Abstract: E-L6219R013TR JESD97 L6219R L6219R013TR SO24 DAC100
Text: L6219R Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 500 mA each winding ■ Wide voltage range 4.5 V to 10 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■
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L6219R
SO-24
L6219R
E-L6219R
E-L6219R013TR
JESD97
L6219R013TR
SO24
DAC100
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PDF
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Untitled
Abstract: No abstract text available
Text: L6219R Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 500 mA each winding ■ Wide voltage range 4.5 V to 10 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■
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L6219R
SO-24
L6219R
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
OT439
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