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    NPN VCBO 80V Search Results

    NPN VCBO 80V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN VCBO 80V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vce 1v

    Abstract: NTE216
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		NTE216 150mA, 300mA, 500mA, 800mA, vce 1v NTE216 PDF

    NTE216

    Abstract: driver transistor hfe 60 vce 1v
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		NTE216 150mA, 300mA, 500mA, 800mA, NTE216 driver transistor hfe 60 vce 1v PDF

    2N2193

    Abstract: 002120
    Text: IvKU 2N2193 NPN SILICON TRANSISTOR TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage


    OCR Scan     		2N2193 2N2193 800mW 100hA 150mA* 500mA* 150raA* 0033C0, 150mA 002120 PDF

    NTE46

    Abstract: No abstract text available
    Text: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE46 500mA 100mA, 100MHz, 100kHz NTE46 PDF

    2N3741

    Abstract: SHD4181 SHD4181A SHD4181B SHD4182 SHD4182A SHD4182B SHD4183 SHD4183A SHD4183B
    Text: POWER TRANSISTOR BIPOLAR POWER TRANSISTORS Ic Max. Contin. Collector Current Amps NPN / PNP VCBO (Collector to Base Voltage) PACKAGE TYPE NPN 8.0 5.0 S 4.0 HD-5 CONFIG. 80V SINGLE SHD4182 SINGLE SINGLE S 4.0 HD-5A S HD-5B 100V SHD4181 SHD4184 SHD4183 SHD4182A


    Original     		SHD4182 SHD4181 SHD4184 SHD4183 SHD4182A SHD4181A SHD4184A SHD4183A SHD4182B SHD4181B 2N3741 SHD4181 SHD4181A SHD4181B SHD4182 SHD4182A SHD4182B SHD4183 SHD4183A SHD4183B PDF

    Untitled

    Abstract: No abstract text available
    Text: F 2N2193 NPN SILICON TRANSISTOR TO-39 2 N 2 1 93 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage


    OCR Scan     		2N2193 800mW 150mA* 500mA* 0033G3, 150mA 20MHz PDF

    2SC697

    Abstract: 2SA547 2SC697A 2SA547A NPN VCBO 80V
    Text: 2SC697, 2SC697A 2SC697, 2SC697A NPN + 7° U'—J-SS/'Si NPN Epitaxial Planar ^ S ^ W I f f l / M e d i u m Power Amplifier 2SA547, 2SA547A <fc n > ~ f 'J ^ U /C om plem en tary pair with 2SA547, 2SA547A $$ /F e a t u r e s • 3 1/ ^ • — -X ll,E E VcBO £ > ; * ; l ! H 'o / H i g h VCBO


    OCR Scan     		2SC697, 2SC697A 2SA547, 2SA547A 2SA547A 2SC697 2SA547 2SC697A NPN VCBO 80V PDF

    2SD288

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator applications


    Original     		2SD288 O-220C 2SD288 PDF

    NTE2646

    Abstract: No abstract text available
    Text: NTE2646 Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount Features: D Low Current D Low Voltage Applications: D General Purpose Switching and Amplification Absolute Maximum Ratings: Collector−Base Voltage Open Emitter , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE2646 100MHz 200Hz NTE2646 PDF

    2sd288

    Abstract: 2sD288 Y
    Text: Inchange Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator applications


    Original     		2SD288 O-220C 2sd288 2sD288 Y PDF

    NTE18

    Abstract: NTE19
    Text: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE18 NTE19 100mA 500mA, NTE18 NTE19 PDF

    NTE18

    Abstract: NTE19
    Text: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE18 NTE19 100mA 500mA, NTE18 NTE19 PDF

    NPN Transistor VCEO 80V 100V

    Abstract: NTE2347
    Text: NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage IE = 0 , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V


    Original     		NTE2347 NTE2347 500mA, 500mA NPN Transistor VCEO 80V 100V PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE18 NTE19 100mA 500mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST52 ISSUE 3 - JANUARY 1996_ FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — AS3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT Vcbo


    OCR Scan     		BST52 500mA, -500mA FMMT614 500mA PDF

    MMBTA06LT1

    Abstract: mbta06
    Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage


    Original     		MBTA06LT1 500mA 225mW 100mA 100mA 100MHz 062in MMBTA06LT1 300uS mbta06 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE z Complement to KSA931 z High Collector-Base Voltage: VCBO=80V z Collector Current: IC=700mA z Collector Dissipation: PC=1W


    Original     		O-92L KSC2331 O-92L KSA931 700mA 500mA PDF

    nte297

    Abstract: NTE297MP
    Text: NTE297 NPN & NTE298 (PNP) Silicon Complementary Transistors Audio Amplifier, Driver Features: D High Collector–Emitter Voltage D Ideal for 25 – 30W Low–Frequency Output Drive Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE297 NTE298 500mA, 300mA, 100MHz NTE297MP NTE297 PDF

    KSA931

    Abstract: KSC2331
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2331 TO-92MOD TRANSISTOR NPN 1.EMITTER FEATURE z Complement to KSA931 z High collector-Base Voltage: VCBO=80V z Collector current: IC=700mA z Collector dissipation: PC=1W


    Original     		O-92MOD KSC2331 O-92MOD KSA931 700mA 500mA KSA931 KSC2331 PDF

    KSA931

    Abstract: KSC2331
    Text: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L • Complement to KSA931 • High Collector-Base Voltage VCBO=80V • Collector Current IC=700mA • Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS TA=25°°C


    Original     		KSC2331 O-92L KSA931 700mA KSA931 KSC2331 PDF

    NPN Transistor VCEO 80V 100V

    Abstract: 2N4239 LE17
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		2N4239 O-205AD) NPN Transistor VCEO 80V 100V 2N4239 LE17 PDF

    KSC2331

    Abstract: KSA931
    Text: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L • Complement to KSA931 • High Collector-Base Voltage VCBO=80V • Collector Current IC=700mA • Collector Dissipation PC=1W  ABSOLUTE MAXIMUM RATINGS TA=25


    Original     		KSC2331 O-92L KSA931 700mA 500mA, KSC2331 KSA931 PDF

    KSC1008

    Abstract: No abstract text available
    Text: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C


    Original     		KSC1008 KSA708 700mA 800mW KSC1008 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		2N4239 34mW/Â O-205AD) PDF