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    NTE216 Search Results

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    NTE Electronics Inc NTE216

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    NTE216 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTE216 NTE Electronics Silicon NPN Transistor High Speed Switch, Core Driver Original PDF
    NTE2164 NTE Electronics NMOS / 64k DRAM Scan PDF

    NTE216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE216

    Abstract: driver transistor hfe 60 vce 1v
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE216 150mA, 300mA, 500mA, 800mA, NTE216 driver transistor hfe 60 vce 1v

    NTE2164

    Abstract: No abstract text available
    Text: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation


    Original     		PDF NTE2164 NTE2164 Note12 Note13

    vce 1v

    Abstract: NTE216
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE216 150mA, 300mA, 500mA, 800mA, vce 1v NTE216

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128