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    NPTB00025A Search Results

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    NPTB00025A Price and Stock

    MACOM NPTB00025AB

    RF MOSFET GAN AC360B-2
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    DigiKey NPTB00025AB Bulk 30
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    Mouser Electronics NPTB00025AB
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    NPTB00025A Datasheets Context Search

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    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


    Original     		PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019