NSG40635 Search Results

NSG40635 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NSG40635		New England Semiconductor	Insulated Gate Bipolar Transistor		Original	PDF

NSG40635 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Insulated Gate Bipolar Transistors Page 1 of 1 Home Package Device Type BVCES Volts IC CONT Amp VCE(sat) Volts tf* ns (typical) CIES q JC pF (typical) ° C/W (typical) TO-254 NSG20640 600@90° C 31 2.0 800 1500 1.25 TO-254 NSG20648A 600@90° C 24 2.9 100	Original	O-254 O-257 O-258	PDF
NSG20640 Abstract: NSG20648A NSG21034 NSG30620 NSG30620A NSG40635 NSG40640 NSG40648A NSG40660A NSG40675 Text: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 DEVICE TYPE b v ces l e CONT AMPS VcE(snt) VOLTS lf (1) nsec * Q es * Pf 0j/c* °c/w NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c	OCR Scan	O-257 NSG30620 NSG30620A O-254 NSG20640 NSG20648A NSG21034 O-258 NSG40635 NSG40640 NSG40648A NSG40660A NSG40675	PDF
NSG20640 Abstract: NSG20648A NSG21034 NSG30620 NSG30620A NSG40635 NSG40640 NSG40648A NSG40660A NSG40675 Text: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 DEVICE TYPE b v ces l e CONT AMPS VcE(snt) VOLTS lf (1) nsec * Qes * Pf 0j/c* °c/w NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c	OCR Scan	O-257 NSG30620 NSG30620A O-254 NSG20640 NSG20648A NSG21034 O-258 NSG40635 NSG40640 NSG40648A NSG40660A NSG40675	PDF
transistor bc 570 Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 i DEVICE TYPE B^C ES le CONT AMPS VOLTS ^C E (sat) ‘f (1) nsec * C\|ES * 0 j/c * NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c	OCR Scan	O-257 NSG30620 NSG30620A O-254 NSG20640 NSG20648A NSG21034 O-258 NSG40635 NSG40640 transistor bc 570	PDF