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    NTE21 Price and Stock

    NTE Electronics Inc NTE218

    Audio Power Transistor, Pnp, -80V, To-66; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:-; Msl:-Rohs Compliant: Yes |Nte Electronics NTE218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE218 Bulk 1
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    Bristol Electronics NTE218 1
    • 1 -
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    Quest Components NTE218 2
    • 1 $10.3275
    • 10 $6.885
    • 100 $6.885
    • 1000 $6.885
    • 10000 $6.885
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    TME NTE218 2 1
    • 1 $6.43
    • 10 $5.11
    • 100 $4.59
    • 1000 $4.59
    • 10000 $4.59
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    NTE Electronics Inc NTE213

    Transistor, bjt, pnp,65V V(Br)Ceo,30A I(C),to-36 |Nte Electronics NTE213
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    Newark NTE213 Bulk 1
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    Onlinecomponents.com NTE213 7
    • 1 $58.16
    • 10 $46.64
    • 100 $41.04
    • 1000 $39.99
    • 10000 $39.99
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    Quest Components NTE213 6
    • 1 $39
    • 10 $39
    • 100 $39
    • 1000 $39
    • 10000 $39
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    TME NTE213 5 1
    • 1 $63
    • 10 $50.1
    • 100 $50.1
    • 1000 $50.1
    • 10000 $50.1
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    NTE Electronics Inc NTE210

    Bipolar Transistor, Npn, 75V; Transistor Polarity:Npn; Collector Emitter Voltage Max:75V; Continuous Collector Current:1A; Power Dissipation:1.67W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:375Mhz Rohs Compliant: Yes |Nte Electronics NTE210
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    Newark NTE210 Bulk 1
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    NTE Electronics Inc NTE211

    Transistor, bjt, pnp,75V V(Br)Ceo,1A I(C),to-202 Rohs Compliant: Yes |Nte Electronics NTE211
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    Newark NTE211 Bulk 1
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    NTE Electronics Inc NTE219

    Transistor PNP Siicon 100V IC=15A TO-3 Case General Purpos AMP And Switch Complement To NTE130
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    Onlinecomponents.com NTE219 415
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    • 10 $3.93
    • 100 $3.44
    • 1000 $2.77
    • 10000 $2.56
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    Quest Components NTE219 4
    • 1 $7.2
    • 10 $4.8
    • 100 $4.8
    • 1000 $4.8
    • 10000 $4.8
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    Find more NTE21 price and stock on Findchips.com

    NTE21 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE21 NTE Electronics PNP Silicon Complementary Transistor High Power, Low Collector Saturation Voltage Power Output Original PDF
    NTE210 NTE Electronics Silicon Complementary Transistor General Purpose Output & Driver Original PDF
    NTE210 NTE Electronics Transistors - Bi-Polar Scan PDF
    NTE2101 NTE Electronics Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Original PDF
    NTE2102 NTE Electronics Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Original PDF
    NTE2104 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF
    NTE2107 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF
    NTE211 NTE Electronics Silicon Complementary Transistor General Purpose Output & Driver Original PDF
    NTE211 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Output & Driver, Pkg Style TO202 Scan PDF
    NTE211 NTE Electronics Transistors - Bi-Polar Scan PDF
    NTE21128 NTE Electronics Integrated Circuit NMOS, 128K (16K x 8) UV EPROM Original PDF
    NTE21128 NTE Electronics Microprocessor and Memory IC Pinouts Scan PDF
    NTE2114 NTE Electronics Integrated Circuit MOS, Static 4K RAM, 300ns Original PDF
    NTE2117 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF
    NTE21256 NTE Electronics 262,144-Bit Dynamic Random Access Memory (DRAM) Original PDF
    NTE21256 NTE Electronics Microprocessor and Memory IC Pinouts Scan PDF
    NTE2128 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF
    NTE213 NTE Electronics Germanium PNP Transistor High Power, High Gain Amplifier Original PDF
    NTE213 NTE Electronics Transistors - Bi-Polar Scan PDF
    NTE214 NTE Electronics Silicon NPN Transistor Darlington Driver Original PDF

    NTE21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2107

    Abstract: No abstract text available
    Text: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which


    Original     		PDF NTE2107 NTE2107

    NTE20

    Abstract: NTE21
    Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE20 NTE21 500mA 200mA NTE20 NTE21

    Silicon NPN Darlington transistor

    Abstract: No abstract text available
    Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


    Original     		PDF NTE214 NTE214 500IB1 500IB2 Silicon NPN Darlington transistor

    NTE218

    Abstract: vce 1v
    Text: NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: D Low Saturation Voltage – 0.6VCE sat @ IC = 1A D High Gain Characteristics – hFE @ IC = 250mA: 30–100


    Original     		PDF NTE218 NTE218 250mA: 250mA 250mA, 100kHz vce 1v

    NTE21128

    Abstract: No abstract text available
    Text: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user


    Original     		PDF NTE21128 NTE21128 250ns

    NTE20

    Abstract: NTE21
    Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE20 NTE21 500mA 200mA NTE20 NTE21

    germanium transistor pnp

    Abstract: nte213
    Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:


    Original     		PDF NTE213 NTE213 500mA germanium transistor pnp

    NTE2128

    Abstract: No abstract text available
    Text: NTE2128 Integrated Circuit 16K 2048 x 8−Bit StaticRandom Access Memory (RAM) Description: The NTE2128 is a 16,384−bit Random−Access Memory (RAM) device in a 24−Lead DIP type package organized as 2048 words by 8 bits. Using a scaled NMOS technology, its design provides the


    Original     		PDF NTE2128 NTE2128 384-bit 24-Lead 200mV

    Untitled

    Abstract: No abstract text available
    Text: NTE218 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)3 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF NTE218

    NTE2117

    Abstract: No abstract text available
    Text: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed


    Original     		PDF NTE2117 NTE2117 16-Lead Note18. Note19.

    NTE130

    Abstract: NTE130MP NTE219 NTE219MCP
    Text: NTE130 NPN & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.


    Original     		PDF NTE130 NTE219 NTE130MP NTE130 NTE219MCP NTE219

    NTE211

    Abstract: NTE210
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE211 NTE210

    NTE2102

    Abstract: NTE210
    Text: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage


    Original     		PDF NTE2102 350ns NTE2101 NTE2102 NTE210

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
    Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


    Original     		PDF NTE215 NTE215 500IB1 500IB2 DC 5V to DC 100V CIRCUIT DIAGRAM 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic

    NTE2114

    Abstract: No abstract text available
    Text: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for


    Original     		PDF NTE2114 300ns NTE2114 225mW 300ns

    NTE216

    Abstract: driver transistor hfe 60 vce 1v
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE216 150mA, 300mA, 500mA, 800mA, NTE216 driver transistor hfe 60 vce 1v

    NTE2147

    Abstract: No abstract text available
    Text: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative


    Original     		PDF NTE2147 NTE2147 4096-bit 18-Lead 200mV -200mV Note10. Note12.

    NTE2164

    Abstract: No abstract text available
    Text: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation


    Original     		PDF NTE2164 NTE2164 Note12 Note13

    NTE2104

    Abstract: No abstract text available
    Text: NTE2104 Integrated Circuit 4096 X 1 − Bit DYNAMIC RAM Description: The NTE2104 is a 4096 word by 1 bit MOS random access memory circuit fabricated with an N − Channel Silicon Gate Process. The NTE2104 employs a single transistor storage cell utilizing a dynamic control circuitry to achieve optimum performance with low power dissipation.


    Original     		PDF NTE2104 NTE2104

    vce 1v

    Abstract: NTE216
    Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE216 150mA, 300mA, 500mA, 800mA, vce 1v NTE216

    NTE20

    Abstract: NTE21
    Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE20 NTE21 500mA 200mA NTE20 NTE21

    Untitled

    Abstract: No abstract text available
    Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128


    OCR Scan     		PDF NTE8255 40-Lead NTE21128 26-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128

    NTE65101

    Abstract: NTE21128 NTE21256 NTE8255 GJA9
    Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns


    OCR Scan     		PDF NTE8255 40-Lead NTE21128 28-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead GJA9