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    NTE2392 Price and Stock

    NTE Electronics Inc NTE2392

    N Channel Mosfet, 100V, 40A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2392
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    Newark NTE2392 Bulk 1
    • 1 -
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    Bristol Electronics NTE2392 2 1
    • 1 $20.4
    • 10 $20.4
    • 100 $20.4
    • 1000 $20.4
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    Quest Components NTE2392 1
    • 1 $22.1
    • 10 $22.1
    • 100 $22.1
    • 1000 $22.1
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    TME NTE2392 2 1
    • 1 $38.3
    • 10 $30.5
    • 100 $27.4
    • 1000 $27.4
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    NTE2392 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTE2392 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE2392 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2392

    Abstract: No abstract text available
    Text: NTE2392 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2392

    Untitled

    Abstract: No abstract text available
    Text: NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2394

    NTE2392

    Abstract: transistor tl 187
    Text: NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2392 transistor tl 187

    Untitled

    Abstract: No abstract text available
    Text: NTE2392 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)32 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF NTE2392

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K