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    NTE271 Price and Stock

    NTE Electronics Inc NTE271

    Darlington Transistor, Pnp, -100V To-218; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Nte Electronics NTE271
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE271 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Bristol Electronics NTE271 51 1
    • 1 $6.72
    • 10 $4.368
    • 100 $3.1362
    • 1000 $3.1362
    • 10000 $3.1362
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    Quest Components NTE271 40
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $4.5
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    TME NTE271 16 1
    • 1 $5.27
    • 10 $4.19
    • 100 $4.19
    • 1000 $4.19
    • 10000 $4.19
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    YAGEO Corporation NTE271

    POWER BIPOLAR TRANSISTOR, 10A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-218, PLASTIC/EPOXY, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE271 1,376
    • 1 $8.4
    • 10 $8.4
    • 100 $8.4
    • 1000 $2.94
    • 10000 $2.94
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    NTE Electronics Inc NTE2716

    ELECTRONIC COMPONENT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE2716 7
    • 1 $23.8798
    • 10 $23.8798
    • 100 $23.8798
    • 1000 $23.8798
    • 10000 $23.8798
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    NTE271 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE271 NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF
    NTE2716 NTE Electronics Integrated Circuit NMOS, 16K UV Erasable PROM Original PDF

    NTE271 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE271 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.


    Original     		NTE271 PDF

    NTE2716

    Abstract: No abstract text available
    Text: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows


    Original     		NTE2716 NTE2716 350ns PDF

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original     		NTE270 NTE271 NTE270 PDF

    NTE2716

    Abstract: No abstract text available
    Text: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows


    Original     		NTE2716 NTE2716 350ns PDF

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    NTE970

    Abstract: nte956 NTE935 NTE4011B NTE7400 NTE4069 TP007 NTE955M NTE4011 NTE978
    Text: 1993-2012.qxp:QuarkCatalogTempNew 9/11/12 8:54 AM Page 1993 25 Integrated Circuits ICs and Thermal Management TEST & MEASUREMENT Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.


    Original     		O-220 14-Pin NTE960 NTE968 NTE972 NTE1936* NTE978 NTE955M O-218 NTE970 nte956 NTE935 NTE4011B NTE7400 NTE4069 TP007 NTE955M NTE4011 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD PDF

    NPN S2e

    Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
    Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum


    OCR Scan     		T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp PDF

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 PDF