TO202N
Abstract: NTE272 NTE273 ic 555 audio amplifiers
Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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NTE272
NTE273
200mA
500mA
NTE273
O202N
TO202N
NTE272
ic 555 audio amplifiers
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Complementary Darlington Audio Power Amplifier
Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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NTE272
NTE273
200mA
500mA
NTE273
O202N
Complementary Darlington Audio Power Amplifier
PNP Monolithic Transistor Pair
ic 555 audio amplifiers
npn darlington transistor 150 watts
darlington complementary power amplifier
NTE272
application note ic 555
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Untitled
Abstract: No abstract text available
Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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NTE272
NTE273
200mA
500mA
NTE273
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NTE2732A
Abstract: NTE3880 Nte388
Text: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate
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NTE2732A
NTE2732A
200ns,
NTE3880.
Note12.
Note13.
NTE3880
Nte388
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Untitled
Abstract: No abstract text available
Text: NTE273 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25G h(FE) Max. Current gain.
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NTE273
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NTE2732A
Abstract: NTE2732 NTE3880
Text: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate
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NTE2732A
NTE2732A
200ns,
NTE3880.
NTE2732
NTE3880
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NTE199
Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT
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MPX2010GS
MTP75N06HD
NTE102A
NTE2312
MPX2050DP
MTP8N50E
NTE103
NTE2315
MPX2050GP
MTW10N100E
NTE199
NTE2324
NTE262
NTE109
NTE3098
nte222
NTE290A
nte184
NTE192A
NTE309K
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NTE970
Abstract: nte956 NTE935 NTE4011B NTE7400 NTE4069 TP007 NTE955M NTE4011 NTE978
Text: 1993-2012.qxp:QuarkCatalogTempNew 9/11/12 8:54 AM Page 1993 25 Integrated Circuits ICs and Thermal Management TEST & MEASUREMENT Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.
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O-220
14-Pin
NTE960
NTE968
NTE972
NTE1936*
NTE978
NTE955M
O-218
NTE970
nte956
NTE935
NTE4011B
NTE7400
NTE4069
TP007
NTE955M
NTE4011
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NTE4256
Abstract: No abstract text available
Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1
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NTE2732A
24-Lead
200ns
NTE2764
28-Lead
NTE2800
14-Lead
1400-Bit
NTE4256
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Untitled
Abstract: No abstract text available
Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo
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NTE248)
NTE247)
NTE250)
NTE275)
NTE244)
NTE243)
NTE246)
NTE245)
D003SSD
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NPN S2e
Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum
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T0220
T0202
T0202
NTE263)
281MCP
NPN S2e
Darlington pair pnp
npn DARLINGTON 10A
NTE281
nte275
NTE280
DARLINGTON
darlington low power
268 darlington
darlington NPN 50 amp
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Untitled
Abstract: No abstract text available
Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7
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1400-BIT
14-LEAD
NTE2764
NTE2800
NTE2732A
200nS
28-LEAD
24-LEAD
40-LEAD
NTE6502
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