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    NTGD4167CT1G Price and Stock

    onsemi

    onsemi NTGD4167CT1G

    MOSFET N/P-CH 30V 2.6A 6TSOP
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    NTGD4167CT1G Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    NTGD4167CT1G On Semiconductor Complementary, 30V, +2.9/-2.2 A, TSOP-6 Dual Original PDF

    NTGD4167CT1G Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    N419

    Abstract: NTGD4167CT1G NTGD4167
    Text: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features •ăComplementary N-Channel and P-Channel MOSFET •ăSmall Size 3 x 3 mm Dual TSOP-6 Package •ăLeading Edge Trench Technology for Low On Resistance •ăReduced Gate Charge to Improve Switching Response


    Original     		NTGD4167C NTGD4167C/D N419 NTGD4167CT1G NTGD4167 PDF

    NTGD4167CT1G

    Abstract: mosfet 23 Tsop-6
    Text: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response


    Original     		NTGD4167C NTGD4167C/D NTGD4167CT1G mosfet 23 Tsop-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response


    Original     		NTGD4167C NTGD4167C/D PDF