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    NTHS4166NT1G Price and Stock

    onsemi NTHS4166NT1G

    MOSFET N-CH 30V 4.9A CHIPFET
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    DigiKey NTHS4166NT1G Cut Tape 296 1
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    Rochester Electronics NTHS4166NT1G 8,516 1
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    Chip One Stop NTHS4166NT1G Tube 5,749
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    NTHS4166NT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTHS4166NT1G On Semiconductor Power MOSFET 30V, 8.2A Single N-Channel Original PDF

    NTHS4166NT1G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AND8350

    Abstract: NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19
    Text: AND8350 eFuse Reverse Voltage Protection Prepared by: Alan Ball ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction the high side or an n-channel FET can be added in the low side. N-channel FETs are more cost effective and are normally preferred if it is acceptable to break the ground line. If the


    Original     		AND8350 AND8350/D AND8350 NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19 PDF

    NTHS4166NT1G

    Abstract: No abstract text available
    Text: NTHS4166N Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFETt Package Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLeadless ChipFET Package has 40% Smaller Footprint than TSOP-6 •ăExcellent Thermal Capabilities •ăThis is a Pb-Free Device


    Original     		NTHS4166N NTHS4166N/D NTHS4166NT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHS4166N Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFETt Package Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLeadless ChipFET Package has 40% Smaller Footprint than TSOP-6 •ăExcellent Thermal Capabilities •ăThis is a Pb-Free Device


    Original     		NTHS4166N 25laws NTHS4166N/D PDF