Untitled
Abstract: No abstract text available
Text: NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, mCoolt Single P−Channel & Schottky Barrier Diode, ESD Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package
|
Original
|
PDF
|
NTLJD3182FZ
NTLJD3182FZ/D
|
NTLJD3182FZTAG
Abstract: NTLJD3182FZTBG NTLJD3180PZ
Text: NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, mCoolt Single P−Channel & Schottky Barrier Diode, ESD Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package
|
Original
|
PDF
|
NTLJD3182FZ
SC-88
NTLJD3182FZ/D
NTLJD3182FZTAG
NTLJD3182FZTBG
NTLJD3180PZ
|