Untitled
Abstract: No abstract text available
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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PDF
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NTMFS4847N
AND8195/D
NTMFS4847N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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Original
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PDF
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NTMFS4847N
AND8195/D
NTMFS4847N/D
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NTMFS4847NT1G
Abstract: NTMFS4847NT3G 4847N
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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Original
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PDF
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NTMFS4847N
AND8195/D
NTMFS4847N/D
NTMFS4847NT1G
NTMFS4847NT3G
4847N
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Untitled
Abstract: No abstract text available
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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Original
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PDF
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NTMFS4847N
AND8195/D
NTMFS4847N/D
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NTMFS4847NT1G
Abstract: NTMFS4847NT3G
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO-8 Package
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Original
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PDF
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NTMFS4847N
NTMFS4847N/D
NTMFS4847NT1G
NTMFS4847NT3G
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