S29GL064N application notes
Abstract: TSOP56 FOOTPRINT S29GL064N Numonyx M29W640GS hardware protection of S29GL064N Numonyx software and application Spansion Flash M29W640GT SPANSION 16
Text: Migrating to Spansion S29GL-N from Numonyx M29W 32-64 Mb Application Note 1. Introduction This Application Note details how to migrate designs from Numonyx™ 32 Mbit M29W320E and 64 Mbit M29W640G Flash Memory devices to Spansion® 32 Mbit S29GL032N and 64 Mbit S29GL064N MirrorBit®
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S29GL-N
M29W320E
M29W640G
S29GL032N
S29GL064N
S29GL064N application notes
TSOP56 FOOTPRINT
Numonyx
M29W640GS
hardware protection of S29GL064N
Numonyx software and application
Spansion Flash
M29W640GT
SPANSION 16
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EN29LV400A
Abstract: M29W400DT
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV400A vs NUMONYX Flash M29W400DT This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. www.eonssi.com
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EN29LV400A
M29W400DT
M29W400DT
EN29LV400A
EN29LV400A:
M29W400DT:
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2200H
Abstract: EN29GL064 M29W640 M29W640GT M29W640GH M29W640GL
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs NUMONYX Flash M29W640GH/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21
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EN29GL064H/L/T/B
M29W640GH/L/T/B
M29W640GH/L/T/B
EN29GL064H/L/T/B
500ns
200ns
2200H
EN29GL064
M29W640
M29W640GT
M29W640GH
M29W640GL
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PDF
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M29W128G
Abstract: M29W128GH M29W128GL
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com
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EN29GL128H/L
M29W128G
M29W128G
EN29GL128H/L
500ns
M29W128GH
M29W128GL
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JS28F256M29EWL
Abstract: JS28F00AM29EWH JS28F512M29EWL JS28F512m29ewh PC28F512M29EWH js28f256m29ewh JS28F00AM29EWL PC28F00AM29EWL PC28F256M29EWL M29EW
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
100ns
512-word
48MB/s)
Kbytes/64
512-Mbit
JS28F256M29EWL
JS28F00AM29EWH
JS28F512M29EWL
JS28F512m29ewh
PC28F512M29EWH
js28f256m29ewh
JS28F00AM29EWL
PC28F00AM29EWL
PC28F256M29EWL
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JS28F256m
Abstract: js28f256m29 JS28F512 256M29EWH
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
JS28F256m
js28f256m29
JS28F512
256M29EWH
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Untitled
Abstract: No abstract text available
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
100ns
512-word
48MB/s)
Kbytes/64
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PDF
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JS28F128M29EWL
Abstract: JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW
Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read
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M29EW
128-Mbit,
64-Mbit,
32-Mbit
256-word
128Mbit:
64Mbit:
-flash/parallel-nor-flash/js28f064m29ewha
JS28F128M29EWL
JS28F064M29
JS28F128M29
JS28F128M29EWH
M29EWT
JS28F064
M29EWB
JR28F032M29EWT
JR28F064M29EW
JS28F128M29EW
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PDF
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JS28F512
Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
11-Apr-2011
PC28F00AM29EWHB
JS28F512
JS28F256M29EWL
M29EWL
js28f256m29
JS28F512M29
JS28F00am29
PC28F512
5D200
PC28F256M29
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PDF
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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PDF
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7be0
Abstract: No abstract text available
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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Original
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
48MB/s)
Kbytes/64
7be0
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PDF
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JS28F256M29EWL
Abstract: JS28F512m29ewh pc28f512m29ewh JS28F512M29EWL Amax-A15 M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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Original
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M29EW
256-Mbit,
512-Mbit,
100ns
512-word
48MB/s)
Kbytes/64
JS28F256M29EWL
JS28F512m29ewh
pc28f512m29ewh
JS28F512M29EWL
Amax-A15
M29EWL
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PDF
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M29EWL
Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
144KB
256Mb
M29EWL
JS28F00AM29EWH
28F256M29EW
JS28F00AM29EW
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PDF
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JS28F00am29
Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
JS28F00am29
JS28F00AM29EW
JS28F512M29
js28f256m29
pc28f00am29ew
pc28f00am29
JS28F512
PC28F00B
PC28F512M
JS28f256
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PDF
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M29EWH
Abstract: M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball
Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read
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M29EW
128-Mbit,
64-Mbit,
32-Mbit
256-word
128Mbit:
64Mbit:
M29EWH
M29EWL
JS28F064M29
JS28F128M29EWL
JS28F128M29EWH
JR28F064M29EW
JS28F064
001FFFF
JS28F128M
numonyx 106 ball
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PDF
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M29EWL
Abstract: M29EWH M29EW numonyx 106 ball
Text: M29EW 256-Mbit x8 or x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes
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M29EW
256-Mbit(
100ns
1024-byte
48MB/s)
Kbytes/64
M29EWL
M29EWH
M29EW
numonyx 106 ball
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PDF
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NUMONYX
Abstract: JESD97 M29DW128G TSOP56 numonyx m29 TBGA64
Text: M29DW128G 128 Mbit 8 Mb x 16, multiple bank, page, dual boot 3 V supply Flash memory Data Brief Features • Supply voltage – VCC = 2.7 to 3.6 V for Program, Erase and Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page width: 8 words
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M29DW128G
32-word
TSOP56
TBGA64
NUMONYX
JESD97
M29DW128G
TSOP56
numonyx m29
TBGA64
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PDF
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Q002
Abstract: Numonyx M29W800F M29W800FB-KGD numonyx embedded Flash memory
Text: M29W800FB-KGD Known good die, 8-Mbit 1 Mbit x 8 or 512 Kbits x 16 , boot block, 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read ■ Access times: 90 ns ■ Programming time – 10 µs per byte/word typical
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M29W800FB-KGD
64-bit
Q002
Numonyx
M29W800F
M29W800FB-KGD
numonyx embedded Flash memory
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M29W400
Abstract: JESD97 M29W400D M29W400DB M29W400DT TFBGA48 numonyx m29
Text: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 45, 55, 70 ns ■ Programming time – 10 µs per byte/word typical
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M29W400DT
M29W400DB
TSOP48
TFBGA48
M29W400
JESD97
M29W400D
M29W400DB
M29W400DT
TFBGA48
numonyx m29
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PDF
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MX29GL256
Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes
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AT49SV163D
48-Pin
48-Ball
S29AS016J
EN29SL800
S29AS00gest
MX29GL256
28F512P30 Numonyx
M29W256G
28F00AP30
w25q128
MX25L6445
28F00AM29EW
M29DW127G
28F128P30
PF38F3040M0Y3D
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M29W400FT
Abstract: m29w400f m29w800f BGA package tray 6x8mm M29W
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns TSOP48 (N)
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
M29W800F)
M29W400F)
m29w400f
m29w800f
BGA package tray 6x8mm
M29W
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M29W160EB
Abstract: M29W160E M29W160ET TFBGA48 2aa 555
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
M29W160EB
M29W160E
M29W160ET
TFBGA48
2aa 555
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PDF
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3348DC
Abstract: No abstract text available
Text: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) Access time: 45, 55, 70 ns Programming time – 10 s per byte/word typical
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M29W400DT
M29W400DB
0020h
3348DC
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PDF
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M29W800D
Abstract: M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read ■ Access times: 45, 70, 90 ns ■ Programming time – 10 µs per byte/word typical
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M29W800DT
M29W800DB
M29W800D
M29W800DB
M29W800DT
TFBGA48
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PDF
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