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    NUS5530MNR2G Search Results

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    NUS5530MNR2G Price and Stock

    Flip Electronics NUS5530MNR2G

    INTEGRATED DUAL P-CHANNEL MOSFET
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    Rochester Electronics LLC NUS5530MNR2G

    POWER FIELD-EFFECT TRANSISTOR, 3
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    onsemi NUS5530MNR2G

    IC MOSFET W/PNP SW TRANS 8-DFN
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    DigiKey NUS5530MNR2G Cut Tape 1
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    NUS5530MNR2G Reel 3,000
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    Avnet Americas NUS5530MNR2G Reel 0 Weeks, 2 Days 1,352
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    Mouser Electronics NUS5530MNR2G
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    Newark NUS5530MNR2G Reel 3,000
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    Onlinecomponents.com NUS5530MNR2G
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    Rochester Electronics NUS5530MNR2G 81,255 1
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    Chip1Stop NUS5530MNR2G 2,510
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    Flip Electronics NUS5530MNR2G 84,000
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    Others NUS5530MNR2G

    INSTOCK
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    Chip 1 Exchange NUS5530MNR2G 3,263
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    NUS5530MNR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NUS5530MNR2G On Semiconductor Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor Original PDF

    NUS5530MNR2G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Logic Level Gate Drive mosfet

    Abstract: NUS5530MN 506AL NUS5530MNR2G
    Text: NUS5530MN Integrated Power MOSFET with PNP Low VCE sat Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF NUS5530MN NUS5530M Logic Level Gate Drive mosfet NUS5530MN 506AL NUS5530MNR2G

    Untitled

    Abstract: No abstract text available
    Text: NUS5530MN Integrated Power MOSFET with PNP Low VCE sat Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF NUS5530MN NUS5530M