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onsemi NVMFD5877NLT1G MOSFET 2N-CH 60V 6A 8DFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVMFD5877NLT1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	NVMFD5877NLT1G			143 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVMFD5877NLT1G			143 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	NVMFD5877NLT1G		13,165			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	NVMFD5877NLT1G		8,200			1 - 10 $21.74 100 $18.841 1000 $18.841 10000 $18.841	Buy Now

NVMFD5877NLT1G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NVMFD5877NLT1G		On Semiconductor	NVMFD5877 - TRANSISTOR 6 A, 60 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, HALOGEN AND LEAD FREE, PLASTIC, CASE 506BT-01, DFN8, SOP-8, FET General Purpose Power		Original	PDF

NVMFD5877NLT1G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL NVMFD5877NL/D	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product	Original	NVMFD5877NL, NVMFD5877NLWF AEC-Q101 NVMFD5877NL/D	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D	PDF
NVMFD5877NLT1G Abstract: 5877NL Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NLT1G 5877NL	PDF
5877NL Abstract: NVMFD5877NLT1G Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D 5877NL NVMFD5877NLT1G	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable	Original	NVMFD5877NL NVMFD5877NLWF NVMFD5877NL/D	PDF
NVMFD5877NL Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NL	PDF
NVMFD5877NL Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product	Original	NVMFD5877NL, NVMFD5877NLWF NVMFD5877NL/D	PDF
Untitled Abstract: No abstract text available Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature	Original	NVMFD5877NL AEC-Q101 NVMFD5877NL/D	PDF