NX5312
Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Text: LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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NX5312
PL10528EJ02V0DS
NX5312EH
NX5312EH-AZ
NX5312EK
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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NX5312
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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10 gb laser diode 1310 nm
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:
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NX5312
10 gb laser diode 1310 nm
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NX5312
Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:
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NX5312
NX5312EH
NX5312EH-AZ
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NX5312EK-AZ
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC JAPAN
Abstract: NX5312 NX5312EH NX5312EK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5312
NEC JAPAN
NX5312EH
NX5312EK
PX10160E
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