NX6506GK Search Results

NX6506GK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NX6506GK		NEC	Laser Diode, 1 550 nm InGaAsP MQW-DFB Laser Diode for 622 Mb/s, 1.25 Gb/s		Original	PDF
NX6506GK-AZ		California Eastern Laboratories	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s and 1.25 Gb/s APPLICATIONS		Original	PDF

NX6506GK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX6506 Abstract: NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ Text: NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:	Original	PDF	NX6506 NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ
Untitled Abstract: No abstract text available Text: NEC’s 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:	Original	PDF	NX6506
NEC Product Guide Product Catalog Abstract: NX6506 NX6506GH NX6506GK PX10160E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NX6506 Abstract: NX6506GH NX6506GK PX10160E Text: PRELIMINARY DATA SHEET LASER DIODE NX6506 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.	Original	PDF	NX6506 NX6506GH NX6506GK PX10160E