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    NY TRANSISTOR MOSFET Search Results

    NY TRANSISTOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    NY TRANSISTOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CP394R

    Abstract: CEDM7004
    Text: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å


    Original     		PDF CP394R CEDM7004 25-November 2009S CP394R CEDM7004

    CP324

    Abstract: 2n7002 12 2N7002 equivalent 2N7002 chip die transistor
    Text: Central PROCESS TM Semiconductor Corp. CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area


    Original     		PDF CP324 2N7002 18-August CP324 2n7002 12 2N7002 equivalent 2N7002 chip die transistor

    ny transistor mosfet

    Abstract: Bonding 2N7002 CP324 chip die transistor
    Text: PROCESS CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area


    Original     		PDF CP324 2N7002 435-Corp. ny transistor mosfet Bonding 2N7002 CP324 chip die transistor

    ACT5101-1

    Abstract: helicopter construction diode ux transistor 131-6 uses
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • 500VDC RATING CIRCUIT TECHNOLOGY www.aeroflex.com • 40 AMP CONTINUOUS CURRENT UP TO 85°C General Description • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY


    Original     		PDF ACT5101-1 500VDC 500VDC, powT5101-1- ACT5101-1- SCD5101-1 helicopter construction diode ux transistor 131-6 uses

    250 amp IGBT FOR pwm DRIVE

    Abstract: IGBT loss calculate mosfet 3918 ny transistor mosfet drive motor 40A with transistor P channel MOSFET
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • 500VDC RATING CIRCUIT TECHNOLOGY www.aeroflex.com • 40 AMP CONTINUOUS CURRENT UP TO 85°C General Description • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY


    Original     		PDF ACT5101-1 500VDC 500VDC, ACT5101-1- SCD5101-1 250 amp IGBT FOR pwm DRIVE IGBT loss calculate mosfet 3918 ny transistor mosfet drive motor 40A with transistor P channel MOSFET

    bipolar transistor td tr ts tf

    Abstract: No abstract text available
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features General Description • 500VDC RATING • 50 AMP DC RATING • PACKAGE SIZE 3.0" x 2.1" x 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY • MILITARY PROCESSING AVAILABLE


    Original     		PDF ACT5101-1 500VDC 500VDC, MIL-STD-883 ACT5101-1- SCD5101-1 bipolar transistor td tr ts tf

    LS 1316

    Abstract: ACT5101-1
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Preliminary Features General Description • 500VDC RATING • 40 AMP DC RATING • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY • MILITARY PROCESSING AVAILABLE


    Original     		PDF ACT5101-1 500VDC 500VDC, T5101-1- ACT5101-1- SCD5101-1 LS 1316

    B1120

    Abstract: 1144C hybrid ic pwm dc motor 3918 MOSFET
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE


    Original     		PDF ACT5101-1 MIL-PRF-38534 SCD5101-1 B1120 1144C hybrid ic pwm dc motor 3918 MOSFET

    helicopter construction

    Abstract: ACT5101-1
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE


    Original     		PDF ACT5101-1 MIL-PRF-38534 SCD5101-1 helicopter construction

    IGBT loss calculate

    Abstract: ACT5101-1 24LC23
    Text: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE


    Original     		PDF ACT5101-1 MIL-PRF-38534 SCD5101-1 IGBT loss calculate 24LC23

    Untitled

    Abstract: No abstract text available
    Text: ACT 5101 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85 °C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL OR SINUSOIDAL DRIVE CAPABILITY


    Original     		PDF MIL-PRF-38534 510TN

    N6A07

    Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
    Text: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMHN6A07T8 N6A07 N6A07 TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a

    Untitled

    Abstract: No abstract text available
    Text: 2000 CATALOG SENSITRON SEMICONDUCTOR 3HD852002 12A-Peak Low Side Dual MOSFET Driver Bipolar/CMOS/DMOS Process :eatures: • High Peak Output Current - 12A • Wide Operating Range - 4.5V to 18V • Low Supply Current - 450|iA w/Logic 1 Input • Low Output Impedance - 1 .0Q, Typical


    OCR Scan     		PDF 3HD852002

    drive motor 40A with transistor P channel MOSFET

    Abstract: No abstract text available
    Text: —I 1-1- 1- 1-1- 1-1-1- 1-1- 1-1- 1-1-1- 1-1- 1-1-1-1— ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE J I I I I I L J I I I I Features 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C


    OCR Scan     		PDF ACT5101-1 MIL-PRF-38534 drive motor 40A with transistor P channel MOSFET

    k 3918 TRANSISTOR

    Abstract: K 3918 MOSFET igbt to 60 kHz transistor k 3918 single phase SPWM IC
    Text: “i 1-1- 1-1- 1-1-1- 1-1- 1-1-1- 1-1- 1-1-1- 1-1- 1-r ACT5101 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE J I I I I I I I I I I I I I Features • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85 C


    OCR Scan     		PDF ACT5101 MIL-PRF-38534 SCD5101 k 3918 TRANSISTOR K 3918 MOSFET igbt to 60 kHz transistor k 3918 single phase SPWM IC

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
    Text: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications


    OCR Scan     		PDF 2N7002 OT-23 2N7002 CSEMS002 2N7002PA TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF4P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF4P01 HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MMSF4P01HD/D SF4P01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMDF4N01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 4N 01 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 4.0 AMPERES


    OCR Scan     		PDF MMDF4N01HD/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MMDF2P01HD/D F2P01

    ASEA motor

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M SF3P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF SF3P03HD/D MMSF3P03HD/D ASEA motor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF4N01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MMSF4N01HD/D

    transistor bd 370

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M FT3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055V TM OS V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		PDF FT3055V/D FT3055V MMFT3055V/D transistor bd 370

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF TP1N60E/D TP1N60E MTP1N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F3N 04H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Dual N -C hannel Field E ffect Transistor MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MMDF3N04HD/D