HCTS574DMSR
Abstract: HCTS574HMSR HCTS574KMSR HCTS574MS
Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
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Original
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PDF
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HCTS574MS
O11utputs
-55oC
125oC
HCTS574DMSR
HCTS574HMSR
HCTS574KMSR
HCTS574MS
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HCTS574
Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS
Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
|
Original
|
PDF
|
HCTS574MS
O11utputs
-55oC
125oC
HCTS574
HCTS574DMSR
HCTS574HMSR
HCTS574KMSR
HCTS574MS
|
HCTS574KMSR
Abstract: D2416 HCTS574 HCTS574DMSR HCTS574HMSR HCTS574MS
Text: HCTS574MS S E M I C O N D U C T O R August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si
|
Original
|
PDF
|
HCTS574MS
O11utputs
-55oC
125oC
05A/cm2
HCTS574
TA14460A.
HCTS574KMSR
D2416
HCTS574DMSR
HCTS574HMSR
HCTS574MS
|
HCTS574MS
Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR
Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
|
Original
|
PDF
|
HCTS574MS
O11utputs
-55oC
125oC
HCTS574MS
HCTS574DMSR
HCTS574HMSR
HCTS574KMSR
|