IRHY597130CM
Abstract: IRHY593130CM T0-257AA
Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides
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O-257AA)
IRHY597130CM
IRHY597130CM
IRHY593130CM
5M-1994.
O-257AA.
T0-257AA
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16CYQ100C
Abstract: T0-257AA
Text: PD-94016A 16CYQ100C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 100V Major Ratings and Characteristics Description/Features Characteristics 16CYQ100C Units The 16CYQ100C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of reliability environments. It is
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PD-94016A
16CYQ100C
16CYQ100C
O-257AA
MIL-PRF-19500
16Apk,
T0-257AA
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2N7625
Abstract: No abstract text available
Text: PD-97292A 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) RDS(on) ID 0.074Ω -20A* IRHLYS793034CM 0.074Ω -20A*
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PD-97292A
O-257AA)
IRHLYS797034CM
IRHLYS793034CM
2N7625T3
O-257AA
O-257AA.
MIL-PRF-19500
2N7625
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2N7594
Abstract: PD-97193A
Text: PD-97193A 2N7594T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67234CM Radiation Level 100K Rads (Si) IRHYS63234CM 300K Rads (Si) RDS(on) I D 0.22Ω 12A 0.22Ω 12A
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PD-97193A
2N7594T3
O-257AA)
IRHYS67234CM
IRHYS63234CM
90MeV/
5M-1994.
O-257AA.
2N7594
PD-97193A
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2n7607
Abstract: IRHLYS77034CM 2N760 IRHLYS73034CM IRHLYS797034CM 2N7607T3
Text: PD-97291 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY Product Summary Part Number IRHLYS77034CM Radiation Level 100K Rads (Si) RDS(on) 0.045Ω ID 20A* IRHLYS73034CM 300K Rads (Si)
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PD-97291
2N7607T3
IRHLYS77034CM
O-257AA)
IRHLYS73034CM
O-257AA
O-257AA.
MIL-PRF-19500
2n7607
IRHLYS77034CM
2N760
IRHLYS73034CM
IRHLYS797034CM
2N7607T3
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Untitled
Abstract: No abstract text available
Text: PD-94088B 10YQ045C JANS1N7045T3 JANTX1N7045T3 JANTXV1N7045T3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10Amp, 45V Ref: MIL-PRF-19500/735 Major Ratings and Characteristics Characteristics Description/Features 1N7045T3 Units IF AV 10 A VRRM 45 V IFSM @ tp = 8.3ms half-sine
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PD-94088B
10YQ045C
JANS1N7045T3
JANTX1N7045T3
JANTXV1N7045T3
10Amp,
MIL-PRF-19500/735
10Apk,
1N7045T3
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95818
Abstract: No abstract text available
Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)
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O-257AA)
IRHYB67230CM
IRHYB63230CM
IRHYB64230CM
IRHYB68230CM
1000K
90MeV/
5M-1994.
O-257AA.
95818
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2N7588T3
Abstract: 2N7588 isd 1710
Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω
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PD-96986A
2N7588T3
O-257AA)
IRHYS67130CM
IRHYS63130CM
90MeV/
5M-1994.
O-257AA.
2N7588
isd 1710
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JANSR2N7380
Abstract: IRHY3130CM IRHY4130CM IRHY7130CM IRHY8130CM
Text: PD - 91274D IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)
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91274D
IRHY7130CM
JANSR2N7380
MIL-PRF-19500/614
O-257AA)
IRHY7130CM
IRHY3130CM
IRHY4130CM
IRHY8130CM
1000K
JANSR2N7380
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irf 343
Abstract: IRHYB63130CM IRHYB67130CM isd 1710
Text: PD-95841A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 20A* 0.042Ω Low-Ohmic
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PD-95841A
O-257AA)
IRHYB67130CM
IRHYB67130CM
IRHYB63130CM
O-257AA
90MeV/
5M-1994.
O-257AA.
irf 343
isd 1710
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T0257AA
Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number
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94318C
IRHY57133CMSE
JANSR2N7488T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
T0257AA
IRHY57133CMSE
JANSR2N7488T3
T0-257AA
ERS 965
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Untitled
Abstract: No abstract text available
Text: PD - 93981A 16SYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Characteristics Description/Features 16SYQ045C Units IF AV 16 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 250 A VF @ 16Apk, TJ =125°C 0.85 V TJ,Tstg Operating and storage -55 to 150
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3981A
16SYQ045C
16SYQ045C
16Apk,
O-257AA
16SYQ045
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Untitled
Abstract: No abstract text available
Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω
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PD-96986A
2N7588T3
O-257AA)
IRHYS67130CM
IRHYS67130CM
IRHYS63130CM
90MeV/
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides
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PD-93823C
O-257AA)
IRHY57234CMSE
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-96911 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087Ω IRHYS593034CM 300K Rads (Si) 0.087Ω ID -20A -20A
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PD-96911
O-257AA)
IRHYS597034CM
IRHYS597034CM
IRHYS593034CM
O-257AA
5M-1994.
O-257AA
O-257AA.
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TRANSISTORS sec 537
Abstract: No abstract text available
Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International
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94197C
O-257AA)
IRFY9140,
IRFY9140M
IRFY9140
5M-1994.
O-257AA.
TRANSISTORS sec 537
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Untitled
Abstract: No abstract text available
Text: PD - 94349A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y31N20 200V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y31N20 200V RDS(on) 0.092Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4349A
O-257AA)
IRF5Y31N20
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD - 94222A 0.* $0; + Ultrafast, Soft Recovery Diode FRED Features V4 = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets I. 8 = 16A tHH = 35ns Description These Ultrafast, soft reovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning
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4222A
5M-1994.
O-257AA.
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2N7607T3
Abstract: No abstract text available
Text: PRELIMINARY PD-97291 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY Product Summary Part Number IRHLYS77034CM Radiation Level 100K Rads (Si) RDS(on) 0.045Ω ID 20A* IRHLYS73034CM
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PD-97291
2N7607T3
IRHLYS77034CM
O-257AA)
IRHLYS73034CM
O-257AA
O-257AA.
MIL-PRF-19500
2N7607T3
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Untitled
Abstract: No abstract text available
Text: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides
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PD-95841B
O-257AA)
IRHYB67130CM
IRHYB63130CM
90MeV/
5M-1994.
O-257AA.
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IRHYB63134CM
Abstract: IRHYB67134CM
Text: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96997
O-257AA)
IRHYB67134CM
IRHYB67134CM
IRHYB63134CM
90MeV/
5M-1994.
O-257AA.
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95837
Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides
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PD-95837
O-257AA)
IRHY67C30CM
IRHY67C30CM
IRHY63C30CM
90MeV/
5M-1994.
O-257AA.
95837
PD-95837
RG 2006 10A 600V
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IRHYS63130CM
Abstract: IRHYS67130CM
Text: PD-96986 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYS63130CM 300K Rads (Si) 20A* 0.042Ω International Rectifier’s R6 TM technology provides
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PD-96986
O-257AA)
IRHYS67130CM
IRHYS67130CM
IRHYS63130CM
90MeV/
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-94192D HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94192D
O-257AA)
IRL7Y1905C
O-257AC
5M-1994.
O-257AA.
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