SKY65050-372LF
Abstract: No abstract text available
Text: Skyworks Low Noise Amplifiers, Transistors and Drivers ADC Rx LNA Q Receive Digital Baseband Out IF AGC LNA ADC I Transmit Typical Receiver Block Diagram Skyworks’ new Low Noise Amplifier LNA products meet the demanding ultra low noise figure and high linearity needs of
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OT-89
SKY65038-70LF
SKY65045-70LF
SKY65080-70LF
SKY65050-372LF
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DM6030HK
Abstract: TS3332LD XD1001-BD XD1001-BD-000V XD1001-BD-EV1
Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier June 2007 - Rev 14-Jun-07 D1001-BD Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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14-Jun-07
D1001-BD
MIL-STD-883
XD1001-BD-000V
XD1001-BD-EV1
XD1001-BD
DM6030HK
TS3332LD
XD1001-BD-000V
XD1001-BD-EV1
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XD1001
Abstract: 84-1LMI D1001
Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point
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01-May-05
D1001
MIL-STD-883
XD1001
84-1LMI
D1001
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DM603
Abstract: tanaka gold wire DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001-BD-EV1 ts333
Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1001-BD Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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14-Jul-08
D1001-BD
MIL-STD-883
lithD1001-BD-EV1
XD1001-BD
DM603
tanaka gold wire
DM6030HK
TS3332LD
XD1001-BD-000V
XD1001-BD-EV1
ts333
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01APR05
Abstract: No abstract text available
Text: 7.5-22.5/15.0-45.0 GHz GaAs MMIC Active Doubler 40DBL0458 April 2005 - Rev 01-Apr-05 Features Chip Device Layout tio n Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Can be Used to Drive Mimix Receiver +13 dBm Output Drive at +0 dBm Input
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01-Apr-05
40DBL0458
MIL-STD-883
XR1002
01APR05
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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2Xf transistor
Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing
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23-Jun-06
X1000
MIL-STD-883
XR1002
2Xf transistor
TRANSISTOR 2xf
xf 2 6-pin
B 1566 Transistor
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Untitled
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2007 - Rev 03-May-07 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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03-May-07
D1002
MIL-STD-883
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D1002-BD
Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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11-Jul-07
D1002-BD
MIL-STD-883
XD1002-BD-000V
XD1002-BD-EV1
XD1002-BD
D1002-BD
DM6030HK
TS3332LD
XD1002-BD-000V
XD1002-BD-EV1
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ts333
Abstract: CMM0618-BD tanaka epoxy tanaka wire TS3332LD CMM0618-BD-000V DM6030HK M400 PB-CMM0618-BD-0000 VG29
Text: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD August 2007 - Rev 30-Aug-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883
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CMM0618-BD
30-Aug-07
MIL-STD-883
CMM0618-BD-000V
PB-CMM0618-BD-0000
CMM0618-BD
ts333
tanaka epoxy
tanaka wire
TS3332LD
CMM0618-BD-000V
DM6030HK
M400
PB-CMM0618-BD-0000
VG29
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TRANSISTOR 2xf
Abstract: No abstract text available
Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive
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01-Sep-05
X1000
MIL-STD-883
XR1002
TRANSISTOR 2xf
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6.0-18.0 GHz mmic
Abstract: CMM0618-BD CMM0618-BD-000V DM6030HK M400 PB-CMM0618-BD-0000 TS3332LD
Text: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD August 2007 - Rev 30-Aug-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883
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CMM0618-BD
30-Aug-07
MIL-STD-883
CMM0618-BD-000V
PB-CMM0618-BD-0000
CMM0618-BD
6.0-18.0 GHz mmic
CMM0618-BD-000V
DM6030HK
M400
PB-CMM0618-BD-0000
TS3332LD
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Untitled
Abstract: No abstract text available
Text: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883
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26-Apr-07
CMM0618-BD
MIL-STD-883
CMM0618-BD-000V
PB-CMM0618-BD-0000
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D1002
Abstract: mmic distributed amplifier 84-1LMI XD1002
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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04-Aug-05
D1002
MIL-STD-883
D1002
mmic distributed amplifier
84-1LMI
XD1002
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Untitled
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 D1002 Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point
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05-May-05
D1002
MIL-STD-883
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mmic distributed amplifier
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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14-Jul-08
D1002-BD
MIL-STD-883
uniformity00V
XD1002-BD-EV1
XD1002-BD
mmic distributed amplifier
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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transistor kc 2026
Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,
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MIL-S-19500/340
2N2079A
Adc-19500/340
2N2079A
2N173
2N2079
2N277
2N2080,
2N2080A
2N278
transistor kc 2026
2n2079
2N1099
GERMANIUM* 2n1099
2N2082
transistor sec 621
MIL-S-19500 FOR POWER LINE TRANSISTOR
kc 2026
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GY 123
Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Text: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122
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GAZ14
GY 123
SY 170
gd 241 c
gd241c
funkamateur
sy 166
sy 164
VSF203
VSF200
SF 127
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2N5508
Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N5508
2N1019
l53b 5
2N4241
BC138
2SJ11
Transistors 2n551
2N3523
2N550
2N551
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MP21E
Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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2n3054
Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include
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edi358
TA7557
TA7611
TA7612
TA7639
TA7640
TA7719
TA7739
TA7740
TA7741
2n3054
RCA transistor 40410
RCA 40310
2n2870
RCA 40636 transistor
transistor 40410
ta7719
2n2338
2N2405
2N2147
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