2sd1047
Abstract: transistor 2sd1047 2SD1047 transistor
Text: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured
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2SD1047
2SD1047
transistor 2sd1047
2SD1047 transistor
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2STC4468
Abstract: 2STA1695 JESD97
Text: 2STC4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STA1695 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 Application ■ 2 1 Audio power amplifier TO-3P Description
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2STC4468
2STA1695
2STC4468
2STA1695
JESD97
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2STW1695
Abstract: 2STW4468 JESD97 st 247 STMicroelectronics code date marking
Text: 2STW4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-247 Audio power amplifier
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2STW4468
2STW1695
O-247
2STW1695
2STW4468
JESD97
st 247
STMicroelectronics code date marking
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Untitled
Abstract: No abstract text available
Text: 2STW4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o r P e Applications
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2STW4468
2STW1695
O-247
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ASI10655
Abstract: TVV007
Text: TVV007 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI TVV007 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC -65 C to +200 C TJ inches / mm
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TVV007
TVV007
ASI10655
ASI10655
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ASI10631
Abstract: MLN2027SS
Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC
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MLN2027SS
MLN2027SS
8-32UNC
ASI10631
ASI10631
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ASI10656
Abstract: TVV010
Text: TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC
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TVV010
112x45°
TVV010
ASI10656
ASI10656
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42fg
Abstract: ASI10750 VMB150-28
Text: VMB150-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI VMB150-28 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC O TJ -65 C to +200 C TSTG
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VMB150-28
VMB150-28
ASI10750
42fg
ASI10750
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TRANSISTOR TC 137
Abstract: ASI10691
Text: UML3 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI UML3 is Designed for 45° B FEATURES: • • • Omnigold Metalization System C D J E I F G MAXIMUM RATINGS H K 10 A IC 60 V VCB 35 V VCE PDISS 140 W @ TC = 25 OC O
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ASI10691
TRANSISTOR TC 137
ASI10691
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ASI10587
Abstract: FMB075
Text: FMB075 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The ASI FMB075 is Designed for .112x45° L A Ø.125 NOM. FULL R FEATURES: C • • • Omnigold Metalization System B E H D G F I J MAXIMUM RATINGS IC 10 A VCB 60 V 140 W @ TC = 25 OC
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FMB075
FMB075
112x45°
ASI10587
ASI10587
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TRANSISTOR TC 137
Abstract: ASI10627 MLN1033S
Text: MLN1033S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI MLN1033S is Designed for 45° D S S B FEATURES: G • • • Omnigold Metalization System C D J I E F G MAXIMUM RATINGS H K 10 A IC 60 V VCB 35 V VCE PDISS 140 W @ TC = 25 OC
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MLN1033S
MLN1033S
ASI10627
TRANSISTOR TC 137
ASI10627
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FMBT5550
Abstract: oc 140 npn transistor
Text: Formosa MS High Voltage NPN Epitaxial Planar Transistor FMBT5550 / FMBT5551 List List. 1 Package outline. 2
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FMBT5550
FMBT5551
120sec
260sec
30sec
DS-231108
oc 140 npn transistor
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CHDTC123YUGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC123YUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.
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CHDTC123YUGP
SC-70/SOT-323)
SC-70/SOT-323
100OC
-40OC
CHDTC123YUGP
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marking wg
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC143ZKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.
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CHDTC143ZKPT
SC-59/SOT-346)
SC-59/SOT-346
100OC
-40OC
marking wg
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CHDTC363EUGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.
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CHDTC363EUGP
SC-70/SOT-323)
SC-70/SOT-323
100OC
-40OC
CHDTC363EUGP
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CHDTC113ZUGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC113ZUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.
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CHDTC113ZUGP
SC-70/SOT-323)
SC-70/SOT-323
100OC
-40OC
CHDTC113ZUGP
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ZUA 08
Abstract: CHDTC113ZU CHDTC113ZUPT
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC113ZUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.
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CHDTC113ZUPT
SC-70/SOT-323)
SC-70/SOT-323
100OC
-40OC
ZUA 08
CHDTC113ZU
CHDTC113ZUPT
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marking wg
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC143ZEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-75/SOT-416 * High current gain.
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CHDTC143ZEPT
SC-75/SOT-416)
SC-75/SOT-416
100OC
-40OC
marking wg
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CHDTC363EKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-23 * High current gain.
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CHDTC363EKGP
OT-23)
100OC
-40OC
CHDTC363EKGP
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CHDTC123YEGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC123YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-75/SOT-416 * High current gain.
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CHDTC123YEGP
SC-75/SOT-416)
SC-75/SOT-416
100OC
-40OC
CHDTC123YEGP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.
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CHDTC123YKPT
SC-59/SOT-346)
SC-59/SOT-346
100OC
-40OC
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC363EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-23 * High current gain.
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CHDTC363EKPT
OT-23)
100OC
-40OC
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BD633
Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.
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BD633,
BD635,
BD637
BD633
BD635
BD637
darlington complementary power amplifier tip 142
tip 42
tip 3055
B0633
TIP 5530
TIP NPN
tip 120
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MD3735
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F MbE D • b3b72S4 QCHSMSb MOTOROLA M SEM ICONDUCTOR m h h h m ^ ■ MOTb T - Ì 0 2 5 h TECHNICAL DATA MD3735 M D3735F Discrete M ilita ry Products (Duals) NPN Silicon Dual/Quad Small-Signal Transistors MHQ3735 MQ3735 /////I/ (Quads)
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b3b72S4
MD3735
D3735F
MHQ3735
MQ3735
MIL-S-19500/395
MD3735F
MQ3735
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