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    OCT19 Search Results

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    OCT19 Price and Stock

    Ruland Manufacturing Co Inc MOCT19-8-A

    8 MM OLDHAM COUPLING HUB
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    DigiKey MOCT19-8-A Bag 1
    • 1 $23.83
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    Ruland Manufacturing Co Inc MOCT19-6-A

    6 MM OLDHAM COUPLING HUB
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    DigiKey MOCT19-6-A Bag 1
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    RS MOCT19-6-A Bulk 1
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    Ruland Manufacturing Co Inc MOCT19-7-A

    7 MM OLDHAM COUPLING HUB
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    DigiKey MOCT19-7-A Bag 1
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    Ruland Manufacturing Co Inc MOCT19-4-A

    4 MM OLDHAM COUPLING HUB
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    DigiKey MOCT19-4-A Bag 1
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    RS MOCT19-4-A Bulk 1
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    Ruland Manufacturing Co Inc MOCT19-5-A

    5 MM OLDHAM COUPLING HUB
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    RS MOCT19-5-A Bulk 1
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    OCT19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A B C D E G F H REVISIONS 13.11 .516 REV DESCRIPTION, ECN, EAR NO. DATE APP'D A RELEASE OCT19/07 A.G. B CHANGE DIMS JUN30/08 K.L. C REV PER EAR 14211 JUL10/13 K.L. 1 1 17.70 .697 2 2 LOCKING TAB 12.50 .492 3 TYPE A- USB RECEPTACLE 3 14.35 .565 PUSH THIS DIRECTION


    Original     		PDF OCT19/07 JUN30/08 JUL10/13 UL94V-0, P-LUSB-A111-00

    12232

    Abstract: lcm 548 display LCD 12232 lcm 041 display 12232b cl 12232
    Text: 北京青云创新公司 图形点阵模块 LCM 12232 B Oct19,2000 PRODUCT SPECIFICATIONS „ PHYSICAL DATA „ EXTERNAL DIMENSIONS „ BLOCK DIAGRAM „ ABSOLUTE MAXIMUM RATINGS „ ELECTRICAL CHARACTERISTICS „ OPERATING PRINCIPLES & METHODS „ DISPLAY DATA RAM ADDRESS MAP


    Original     		PDF Oct19 12232 lcm 548 display LCD 12232 lcm 041 display 12232b cl 12232

    P-LUSB-A111-00

    Abstract: LUSB-A111-00 usb receptacle type b 2.0 micro usb receptacle pcb layout amphenol usb connector
    Text: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD A - RELEASE - OCT19/07 - A.G. B - CHANGE DIMS - JUN30/08 - K.L. . .516 13.1 F F E E LOCKING TAB TYPE A- USB RECEPTACLE .492 12.5 .565 14.4 D D .323 8.2 .079 2.0 PUSH THIS DIRECTION SLIGHTLY TO UNLOCK NOTES: 1.


    Original     		PDF OCT19/07 JUN30/08 UL94V-0, OCT19 P-LUSB-A111-00 P-LUSB-A111-00 LUSB-A111-00 usb receptacle type b 2.0 micro usb receptacle pcb layout amphenol usb connector

    bas125

    Abstract: BAS 20 SOT23
    Text: BAS 125 Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 BAS 125 BAS 125-04 BAS 125-05 1 3 BAS 125-06 3 3 3 1 2 VPS05161 1 2


    Original     		PDF VPS05161 EHA07002 EHA07005 EHA07006 EHA07004 OT-23 EHD07123 bas125 BAS 20 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR 119 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 119 WKs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 EHA07264 OT-23 Oct-19-1999

    VSO05561

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561

    VPS05604

    Abstract: WFs transistor
    Text: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604


    Original     		PDF VPS05604 OT-363 EHA07193 EHA07176 OT-363 Oct-19-1999 VPS05604 WFs transistor

    WFs transistor

    Abstract: VSO05561
    Text: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07184 OT-323 Oct-19-1999 WFs transistor VSO05561

    SOT-23 marking w2s

    Abstract: marking w2s w2s sot23
    Text: BCR 189 PNP Silicon Digital Transistor Preliminary data 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR 189 W2s Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07180 OT-23 Oct-19-1999 SOT-23 marking w2s marking w2s w2s sot23

    Untitled

    Abstract: No abstract text available
    Text: BCR 133 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 133 WCs Pin Configuration 1=B 2=E Package 3=C SOT-23


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    Untitled

    Abstract: No abstract text available
    Text: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    198S

    Abstract: VPS05604 marking 32 SOT-363
    Text: BCR 198S PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=47kΩ, R2=47kΩ) 2 3


    Original     		PDF VPS05604 EHA07173 OT-363 Oct-19-1999 198S VPS05604 marking 32 SOT-363

    VSO05561

    Abstract: No abstract text available
    Text: BCR 191W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=22kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 191W WOs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561

    VPS05604

    Abstract: 119s
    Text: BCR 119S NPN Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=4.7kΩ) 2 3 1 C1 B2 E2


    Original     		PDF VPS05604 EHA07265 OT-363 Oct-19-1999 VPS05604 119s

    samsung xsr

    Abstract: Sector Translation Layer SAMSUNG NAND FLASH TRANSLATION LAYER Flash Translation Layer XSR onenand xsr s3c2410 BML STL XSR v1.5.1 SAMSUNG NAND FLASH TRANSLATION LAYER SOFTWARE nand flash spare area assignment
    Text: XSR v1.5.1 Porting Guide APR-07-2006, Version 5.1 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks XSR is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		PDF APR-07-2006, samsung xsr Sector Translation Layer SAMSUNG NAND FLASH TRANSLATION LAYER Flash Translation Layer XSR onenand xsr s3c2410 BML STL XSR v1.5.1 SAMSUNG NAND FLASH TRANSLATION LAYER SOFTWARE nand flash spare area assignment

    XSR Porting Guide

    Abstract: BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr
    Text: UniStore II v1.5.1 Installation Guide JUN-22-2006, Version 3.4 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks UniStore II is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		PDF JUN-22-2006, 364bytes 512bytes 364bytes, 2000bytes, 512byte XSR Porting Guide BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr

    mc34063 step down with mosfet

    Abstract: abstract of battery charging circuit using scr 1000w class d circuit diagram schematics mc34063 h-bridge igbt pwm schematics circuit MC1466 MC34063 Boost MOSFET 500MHz Frequency Counter Using MECL 10 amp 12 volt solar charger circuits mc34063 solar charger h-bridge igbt pwm schematics circuit
    Text: BR1522/D Rev. 1, Oct-1999 Application Notes, Article Reprints and Engineering Bulletins ON Semiconductor Formerly a Division of Motorola Reference Materials Selector Guide Application Notes, Article Reprints and Engineering Bulletins Reference Materials Selector Guide


    Original     		PDF BR1522/D Oct-1999 r14153 mc34063 step down with mosfet abstract of battery charging circuit using scr 1000w class d circuit diagram schematics mc34063 h-bridge igbt pwm schematics circuit MC1466 MC34063 Boost MOSFET 500MHz Frequency Counter Using MECL 10 amp 12 volt solar charger circuits mc34063 solar charger h-bridge igbt pwm schematics circuit

    SP6231

    Abstract: MO-229 SP6231EB SP6641 SP6641A SP6641B
    Text: SP6231 500mA, 3.3V Linear Regulator with Auxiliary Backup FEATURES • “Tiny” DFN Package Offers Excellent Thermal Characteristics also available in NSOIC VSENSE 1 8 GND 7 GND VOUT 3 6 GND VAUX 4 5 GND VIN 2 ■ “Glitch Free” Transition between Two Supplies


    Original     		PDF SP6231 500mA, 500mA SP6231ER-3 SP6231ER-L-3 SP6231 MO-229 SP6231EB SP6641 SP6641A SP6641B

    EIGHT MOSFET ARRAY

    Abstract: 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44
    Text: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset


    Original     		PDF M48T212V M48T212V: 44-lead EIGHT MOSFET ARRAY 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44

    VND10N06

    Abstract: VND10N06-1 VND10
    Text: VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS(on) 0.3Ω Ilim 10A VCLAMP 60V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VND10N06 VND10N06-1 O-252 O-251 VND10N06 VND10N06-1 50KHz VND10

    marking WMs

    Abstract: 183S VPS05604 140KW
    Text: BCR 183S PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ, R2 =10kΩ) 2


    Original     		PDF VPS05604 EHA07173 OT-363 Oct-19-1999 marking WMs 183S VPS05604 140KW

    VSO05561

    Abstract: No abstract text available
    Text: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561

    VPS05604

    Abstract: W1s transistor
    Text: BCR 10PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=10kΩ, R2 =10kΩ) 2 3 1 VPS05604


    Original     		PDF VPS05604 EHA07176 OT-363 Oct-19-1999 VPS05604 W1s transistor

    PIN CONFIGURATION IC 555

    Abstract: IC 555 Ic digital 555 xds pnp 14 pin ic 555
    Text: BCR 555 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 555 XDs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999 PIN CONFIGURATION IC 555 IC 555 Ic digital 555 xds pnp 14 pin ic 555