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    eltek rectifier

    Abstract: saft rectifier emerson PLC Gaston Battery Dearborn Wire and Cable EMERSON rectifier peco II design ideas eltek GULF
    Text: TELECOM POWER: NEW DEVELOPMENTS TO SUPPORT THE LATEST TECHNOLOGIES SEPTEMBER 10 – SEPTEMBER 14, 2006 RICC PROVIDENCE, RHODE ISLAND, U.S.A. www.intelec.org Sponsored by The Power Electronics Society of the Institute of Electrical and Electronics Engineers


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    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    SIRIO

    Abstract: contraves alstom wabco tramway metro train citadis ANSALDO MF2000 Oerlikon
    Text: Earth Bonding System Customer Reference United Kingdom Customer Location Project / Application Bombardier Derby Govia, Turbo Star, Electro Star West Coast Cross Country. London Underground - District Line - Train modifications Juniper, West Coast Main Line, Coradia


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    XK150 SIRIO contraves alstom wabco tramway metro train citadis ANSALDO MF2000 Oerlikon PDF

    ESG456

    Abstract: BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 BC109
    Text: / A] VANI OERLIKON/ SEÏIICONJ) 3bE DSblbMfi DDODGDT fi H S E L I D -oi-ol SILICON DIODES - “¿ 7 - 0 \ T f - o i/o<y h) Trigger devices Pd Ta=25«C TYPE - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Von I f (P e a k ) mA mW 200 200 200 SEMICONDUCTOR* If Vt (Trigger Voltage)


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    O-106 Vrb12V SX400S BC109 BC109B BC109C VBC177A BC177B ESG456 BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 PDF

    TDA 120S

    Abstract: monochrome tv receiver TBA810T 8c015 8c01
    Text: j A3 VANI OERLIKON/ SEMICOND OSblbMÖ 0000051 1 BiSELI 3bE D T-7H E L E V I S I O N /V I D E O e) Video amplifiers b 2- SEMICONDUCTORS /S ' o d (typ) Differential Voltage gain @ R l=2K & V=3V out PP (typ) (Typ ) 9 .0 0 .4 1 0 . 0-3»° 120°t° 2 .5 ° )°


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    JUA733 6C325P 00t31 O-105 O-106 Ot37Q 8C015) 100TP. TDA 120S monochrome tv receiver TBA810T 8c015 8c01 PDF

    Oerlikon

    Abstract: sm 170 380 SM150S Advani-Oerlikon 2SM150 sm 1600 SM150 2SM100
    Text: ADVANI OERLIKON/ SEMICOND 3bE D j yx ^ 'f '- o i- o v RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE T OSblbMfl QDODOBH 3 « S E L I V RRM V RSM 1RRM 1 F AV 1 F(DC) VOLTS VOLTS mA AMP AMP AMP AMP 100 120 700 2500 1FRM *FSM l2t (Contd.) TvJ TCase ^stg °C “C


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    0G032 sm100 Oerlikon sm 170 380 SM150S Advani-Oerlikon 2SM150 sm 1600 SM150 2SM100 PDF

    Untitled

    Abstract: No abstract text available
    Text: A»VANI OERLIKON/ SEMICONJ 3bE D H ISELI OEblbMÖ DÜ0Ü007 4 ' SILICON DIODES d ) Z e n e r diodes A SEM ICO NDU CTO RS o ’2" Electrical Characteristics TYPE ^S Z ✓ GSZ /-GSZ ,G SZ 'GSZ /GSZ GSZ Vg s z » GSZ /GSZ /GSZ a *SZ /GSZ ,GSZ VGSZ ; gsz /GSZ


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    6C325P 00t31 O-105 O-106 Ot37Q U8C015) 100TP. PDF

    LM714

    Abstract: m101a COMPARATOR LM339 OP07 to99 DA711 TO-99 JUA748 LM101 LM201 uA748C
    Text: f ._ :_ -_ :••■■■ ■- - . ■ ■■ ■ -_ I ADVANI OERLIKON/ SEMICONP . 3bE I> ■ . _ 05blb4û DOOQDlb S «1SELI • -7 9 -0 1 INTEGRATED CIRCUITS TYPE Input Offset Voltage @ R S *1 0 K Input Offset Current nA mV typ/max (typ/max)


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    05blb4Ã -79-OI RSS10K yJUA709 JA709C O-105 O-106 O-220 020INOM. 0J07SI LM714 m101a COMPARATOR LM339 OP07 to99 DA711 TO-99 JUA748 LM101 LM201 uA748C PDF

    BC147B

    Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B
    Text: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B


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    OT-25 Te-25Â Ta-25Â O-106 BC147 EBC147 BC147A EBC147A BC147B EBC147B BC148B BC149B BC148A BC149C BC148C BC148 BC157A BC158B PDF

    Advani-Oerlikon

    Abstract: DDD0056 SM25 SM40 SM55 SM70 Oerlikon
    Text: ADVANI OERLIKON/ SEMICOND 3hE D ' • D S b l b Mfi D DD0056 1 ■ S E L I _ | - "T-0/-0\ p X o S + II RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE VRRM VRSM ' rrm 1F AV ' f(DC) VOLTS VOLTS mA AMP SMI v/6 SMI A o SMI / 1 2 SMI 50 100 200 400 600 1000


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    DDD0056 -R5/-01 Advani-Oerlikon SM25 SM40 SM55 SM70 Oerlikon PDF

    DO-41

    Abstract: No abstract text available
    Text: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN


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    02blb4fl 6C325P O-105 O-106 Ot37Q 100TP. DO-41 PDF

    7812 Y 7912

    Abstract: 7812 to92 7805 V Reg LM 327 IC LM 7812 7812 7912 7805 7812 7912 TO-3 7815 to-3 LM327
    Text: ADVANI OERLIKON/ SEMICOND 3bE P □EblbMfi D0DDD17 ? BISELI ' - INTEGRATED CIRCUITS Supply Voltage V min/max / Drift with Temp PPM/°C M/A$ Trigger Current Trigger Voltage Threshold Voltage V rr CC Volts (typ) (typ) Reset Voltage Volts @Vl Vcc - 1 9 Threshold


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    D0DDD17 SE555 NE555 6C325P 00t31 O-105 O-106 Ot37Q U8C015) 100TP. 7812 Y 7912 7812 to92 7805 V Reg LM 327 IC LM 7812 7812 7912 7805 7812 7912 TO-3 7815 to-3 LM327 PDF

    Oerlikon

    Abstract: SM25 SM40 SM55 SM70 v15 1800 1
    Text: ADVANI OERLIKON/ SEMICOND 3bE D B DSblbMfi 0DD0030 T H S E L I _ | 5>X ô -t^O\-o\ Jl RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE V RSM ' rrm 1F AV 1F(DC) 1 FRM *FSM l2t (Contd.) Tvj ^case ^stg VOLTS VOLTS mA AMP AMP AMP AMP AMP2 SEC °C °C "C 100


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    DO-41

    Abstract: IN 4741 do41 in 4740 in 4744 in 4751 in4744 IN4746 IN4743 IN4733
    Text: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T-Ol-Ol J SILICON DIODES SEM ICONDUCTORS e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN /IN /IN „ IN


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    02blb4fl DO-41 DO-41 IN 4741 do41 in 4740 in 4744 in 4751 in4744 IN4746 IN4743 IN4733 PDF

    MZ Series Zener

    Abstract: in758a IN752A IN755A IN756a IN749A IN747a ESZ-11 IN757 IN751a
    Text: A»VANI OERLIKON/ SEMICONJ 3bE D H ISELI OEblbMÖ DÜ0Ü007 4 ' A SILICON DIODES SEM ICO NDU CTO RS d ) Zener diodes o ’2" Electrical Characteristics TYPE ^S Z ✓ GSZ /-GSZ ,G SZ 'GSZ /GSZ GSZ Vg s z » GSZ /GSZ /GSZ a *SZ /GSZ ,GSZ VGSZ ; gsz /GSZ yGSZ


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    DO-35 MZ Series Zener in758a IN752A IN755A IN756a IN749A IN747a ESZ-11 IN757 IN751a PDF

    D400-2000

    Abstract: D400 SFR615 28D400 D400 e D400-2200 D400 E -3G 10FSM SFR215 SFR415
    Text: ADVANI OERLIKON/ SEMICOND 3bE P OEblbMÔ DDDD03M 7 BiSELI r-o\ -ov RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE P Contd. 'RRM 'R SM 'R RM 1 FlAVi 1F(DC) 'FRM FSM l2t VOLTS VOLTS mA AMP AMP AMP AMP AMP2SEC f l O D400 1000 1200 50) (4200) (150 150 12 D400


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    DO-27 i3FR115 SFR215 SFR415 D400-2000 D400 SFR615 28D400 D400 e D400-2200 D400 E -3G 10FSM PDF

    ESG457

    Abstract: C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1
    Text: / A] VANI OERLIKON/ SEÏIICONJ) DSblbMfi DDODGDT fi H S E L I 3bE D - o SILICON DIODES T - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Pd Ta=25«C mW If Peak) mA 200 200 200 150 150 150 l - “¿ 7 - 0 \ (h) Trigger devices TYPE i - o Von Vt (Trigger Voltage) mm/max


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    O-106 Vrb12V SX400S O-105 O-220 020INOM. 0J07SI ESG457 C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1 PDF

    SL307

    Abstract: k308 2sc2233 SK305 407D VSL308 2SD2233 2SD870 2SD820
    Text: / A3 V ANI OERLIKON/ SEMICOND 3bE D DEblbMö DOOOD2Q 7 « S E L I - S .1 - 0 \ ! v TELEVISION/VIDEO DEVICES SEM ICONDUCTORS c) High voltage/video amplifiers Maximum Ratings TYPE pd pD Vcbo V ceo W W 1.0 10 0.8 V 300 200 350 245 150 0.8 200 V 250 200 300 180


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    D000020 S2N3440 riL8N5413 eyiN5416 7SL305 -02SC1875 /2SC2233 O-3/TO-220 2SD820 2SD868 SL307 k308 2sc2233 SK305 407D VSL308 2SD2233 2SD870 PDF

    SN101

    Abstract: SN205 SN204 SN202 SN103 2N3668 SN-205 SN-204 2N6565 2N6394
    Text: 1 ADVANI OERLIKON/ SEMICOND 3bE » B D2blb4û OOGGGBb O B3S ELI / } T Y -02 RELIABLE POWER SEMICONDUCTOR THYRISTORS TYPE V DRM VRRM VOLTS , 1TtAV !tsm AMP AMP AM P2SEC VOLTS @Tc AMP l2t r TH J-C) • gt AMP °C/W mA Vtni @ Itm SC126F 50 12 @ 75°C 7.7 @ 75°C


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    SC126F -SC126A SC126B SC126C SC126D SC126E /SC126M 2N6394 2N6395 10TO-39 SN101 SN205 SN204 SN202 SN103 2N3668 SN-205 SN-204 2N6565 PDF

    AD590H

    Abstract: NE565 NE567 se665 RU 10003 540S
    Text: ADVANI ÔERLIKON/ SEMICOND 3bE i> I □SblbMÖ OOQOOlö =1 M S E L I INTEGRATED CIRCUITS “- 4 3 - 0 \ Temp Range mA (Ohms) Supply Voltage (% V) (ppm^C) Supply Current (Vpp) AM output available <%) Input Resistance Output Sw ing ± 5% Deviation C% fo) Frequency


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    SE665 /NE566 NE567 O-105 O-106 O-220 020INOM. 0J07SI AD590H NE565 RU 10003 540S PDF

    3055t

    Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
    Text: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50


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    02Llb4Ã 0D00D1S 3055H 3055T O-220 2955T -TO-220 800ru O-105 O-106 2n2646 pin N2647 N-055 n055 2N2646 2N4393 RU 6102 PDF

    aeg rsz

    Abstract: AEG RSZ 2 aeg rsz 3 AEG T 178 aeg protection relay oerlikon aeg rsz settings cdc 2030 Sprecher Schuh timer R3AS52
    Text: RK 40-401 C om parison betw een ASEA tim e -la g o v e r- c u rr e n t re la y type RIDA w ith independent tim e -la g c h a ra c te ris tic and c o rresp o n d in g re la y s of o th er m akes CONFIDENTIAL Reg, 5621,7431 RELAY INFORMATION This c ir c u la r Is intended as a guide to ASEA s a le s re p re se n ta tiv e s


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    40-40IE aeg rsz AEG RSZ 2 aeg rsz 3 AEG T 178 aeg protection relay oerlikon aeg rsz settings cdc 2030 Sprecher Schuh timer R3AS52 PDF

    OA91

    Abstract: OA91 DIODES oa95
    Text: ADVANI OERLItCON/ SEHICOND 3bE 1> V " GERMANIUM DIODES OSbltMS ÜQOQOOM 1 « S E L I SEMICONDUCTORS r-oi “0 \ Pi a Detectors Electrical Characteristics At T j =256C Maximum Ratings Type /lN 6 0 y iN 6 6 ^ÏN ôôA y IM294 j 0A90 ^À 72 .A79* y Pd Ta-25“C


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    IM294 Ta-25 6C325P 00t31 O-105 O-106 Ot37Q 02blbMô O-220 100TP. OA91 OA91 DIODES oa95 PDF

    C557A

    Abstract: C557B c 557b 557b npn U1W npn SG311 SG119 bc558c C558B SF104
    Text: A3>VA NI O E R L I K O N / S E M IC O N D 3bE D O S b lb M ê D O O D Ü 11 b B S E L I -3 1 -1 5 SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteristics At Tj»25°C Maximum Ratings Pd T«-25*C W TYPE NPN f PNP / B C , 307 307A 307B i JBC 308 I JBC


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    6C325P 00t31 O-105 O-106 Ot37Q U8C015) 100TP. C557A C557B c 557b 557b npn U1W npn SG311 SG119 bc558c C558B SF104 PDF