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    Infineon diffusion solder

    Abstract: Cu6Sn5 C1870 equivalent transistor of C1870 Olin-194 C70250 C19400 C14415 F-38019 OLIN194
    Text: Tin Whiskers on Lead-free Platings P.J.T.L. Oberndorff1, M. Dittes2, L. Petit3, C.C. Chen4, J. Klerk1 and E.E. de Kluizenaar1 Philips, Centre for Industrial Technology, P.O. Box 218, 5600 MD Eindhoven, the Netherlands, pascal.oberndorff@philips.com 2 Infineon Technologies AG, P.O. Box 1000944, D-93009 Regensburg, Germany, marc.dittes@infineon .com


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    PDF D-93009 F-38019 Infineon diffusion solder Cu6Sn5 C1870 equivalent transistor of C1870 Olin-194 C70250 C19400 C14415 OLIN194

    C18070

    Abstract: Atotech c14415 Cu6Sn5 C18090 olin 194 Olin-194 CuCrSiTi Cu3Sn FeNi42
    Text: Whisker Formation on Tin Plated Cu based Leadframes Results and Conclusion 29 October 2004 Content • • • • • Introduction Experience E4 Main cause whisker growth on Cu LF Countermeasures Conclusions Introduction Period of potential whisker growth


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    PDF FeNi42 ST-150 ST-200 150oC C18070 Atotech c14415 Cu6Sn5 C18090 olin 194 Olin-194 CuCrSiTi Cu3Sn

    Cu6Sn5

    Abstract: Olin-194
    Text: Whisker on Cu 06-June-03 Back Up Block 1 Whisker on Cu Whisker on Cu 06-June-03 Storage conditions • Test data showed that whiskers grow longest at room temperature Explanation: irregular intermetallic growth 1,9 µm ambient 250 1,9 µm 55 °C / ambient


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    PDF 06-June-03 Cu6Sn5 Olin-194

    Olin-194

    Abstract: 6 mil poly vapor barrier olin194 CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198
    Text: Qualification Report March, 1997 QTP# 94052 Version 1.1 256K SRAM, RAM 2.5 TECHNOLOGY, 7% SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Separate IO with transparent write CY7C192 64K x 4 Separate IO without transparent write CY7C194 64K x 4 Common IO with no OE


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    PDF CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198 CY7C199 Semicondu1000 Olin-194 6 mil poly vapor barrier olin194 CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198