TSOP-6 .54
Abstract: NTGS3446 NTGS3446T1
Text: NTGS3446 Power MOSFET 5 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
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NTGS3446
r14525
NTGS3446/D
TSOP-6 .54
NTGS3446
NTGS3446T1
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Hitachi DSA0076
Abstract: HAT1053 HAT1053M P Channel Power MOS FET Power Switching
Text: HAT1053M Silicon P Channel Power MOS FET Power Switching ADE-208-1220 Z Preliminary 1st. Edition Dec. 2000 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device Outline TSOP-6 4 5 6 1 2 5 6 D D D D 3 2
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HAT1053M
ADE-208-1220
Hitachi DSA0076
HAT1053
HAT1053M
P Channel Power MOS FET Power Switching
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Hitachi DSA002752
Abstract: No abstract text available
Text: HAT1043M Silicon P Channel Power MOS FET Power Switching 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D
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HAT1043M
HAT1043M
Hitachi DSA002752
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Memory
Abstract: No abstract text available
Text: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4
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512Kx8/256Kx16/128Kx32,
30A167-00
FTS128KX32XP
FTS128KX32XP/XHP
68-pin
FTS128KX32XP/XHP
Memory
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tag 625 600
Abstract: Si3441DV
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
tag 625 600
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
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Si3443DV
Abstract: S-54948
Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm
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Si3443DV
18-Jul-08
S-54948
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Si3459DV-T1-E3
Abstract: SI3459DV
Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D
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Si3459DV
Si3459DV-T1
Si3459DV-T1--E3
S-51166--Rev.
13-Jun-05
Si3459DV-T1-E3
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Si3455DV
Abstract: No abstract text available
Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3455DV
Si3455DV--2
S-41818--Rev.
29-Aug
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Si3442DV
Abstract: No abstract text available
Text: Si3442DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.07 @ VGS = 4.5 V "4.0 0.095 @ VGS = 2.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3442DV—2.0 W (4) S 2.75 mm N-Channel MOSFET
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Si3442DV
Si3442DV--2
S-48795--Rev.
29-Aug-96
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Untitled
Abstract: No abstract text available
Text: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm
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Si3457DV
Si3457DV--2
S-49562--Rev.
19-Dec-96
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Si3455DV
Abstract: No abstract text available
Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3455DV
Si3455DV--2
S-41818--Rev.
29-Aug
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Si3455DV
Abstract: No abstract text available
Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3455DV
Si3455DV--2
S-41818--Rev.
29-Aug
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Si3433
Abstract: No abstract text available
Text: Si3433 New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.042 @ VGS = - 4.5 V - 5.6 0.057 @ VGS = - 2.5 V - 4.8 0.080 @ VGS = - 1.8 V - 4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D
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Si3433
18-Jul-08
Si3433
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Untitled
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G
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Si3430DV
Si3430DV-T1
18-Jul-08
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
18-Jul-08
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
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Si3454DV
Abstract: No abstract text available
Text: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET
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Si3454DV
Si3454DV--2
S-41817--Rev.
29-Aug-96
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Si3454DV
Abstract: No abstract text available
Text: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET
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Si3454DV
Si3454DV--2
S-41817--Rev.
29-Aug-96
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Si3454DV
Abstract: No abstract text available
Text: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET
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Si3454DV
Si3454DV--2
S-41817--Rev.
29-Aug-96
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Untitled
Abstract: No abstract text available
Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D
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Si3435DV
18-Jul-08
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si3457dv
Abstract: No abstract text available
Text: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm
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Si3457DV
Si3457DV--2
S-49562--Rev.
19-Dec-96
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Untitled
Abstract: No abstract text available
Text: Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 RDS(ON) (W) ID (A) 0.042 @ VGS = –4.5 V "5.6 0.060 @ VGS = –2.5 V "4.7 0.080 @ VGS = –1.8 V "2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D
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Si3445DV
S-59643--Rev.
21-Sep-98
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Untitled
Abstract: No abstract text available
Text: _ SÌ3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY V o s (VI -2 0 to (A) R dS{ON) (¿2) 0.065 @ V Gs = “ 4-5 V ± 4 .4 0 .090 @ V GS * -2 .7 V ± 3 .7 0.100 @ V GS = -2 .5 V ± 3 .5 (4 )S o TSOP-6 Top View
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3443DV
S-54948--
29-Sep-97
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