IRFF223
Abstract: IRFF222 IRFF220 IRFF221
Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m
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IRFF220,
IRFF221,
IRFF222,
IRFF223
1RFF221,
IRFF222
IRFF223
IRFF220
IRFF221
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Untitled
Abstract: No abstract text available
Text: IM I I A Q se^ onI u^ m DS1920 Temperature ¡Button SPECIAL FEATURES Multidrop controller for MicroLAN Digital identification and information by momentary contact Chip-based data carrier compactly stores information Data can be accessed while affixed to object
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DS1920
DS1920
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smd marking code BS sot-23 infineon
Abstract: No abstract text available
Text: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33
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OT-23
Q67041-S1416
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd marking code BS sot-23 infineon
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IRFS740
Abstract: IRFS741 uA 741 NC K 741 MOSFET
Text: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability
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IRFS740/741
IRFS740
IRFS741
to-220f
7Tb4142
00EA3E0
uA 741 NC
K 741 MOSFET
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Untitled
Abstract: No abstract text available
Text: 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- MO S V 2SK3 4 3 7 TENTATIVE SWITCHING REGULATOR APPLICATIONS Unit in mm •Low Drain - Source ON Resistance : R D S {ONi=0*74Q(Typ.) •High Forward Transfer Admittance : IY fs |= 4 . 5 S(Typ.)
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2SK3437
100/z
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Untitled
Abstract: No abstract text available
Text: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control
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Untitled
Abstract: No abstract text available
Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a
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FSL923A0D,
FSL923A0R
-200V,
670J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: EL5197C SÛlglC 200MHz FiXCd GdÌfl AtttpHfißT HIGH PERFORMANCE ANALOG INTEGRATED CIRCUÌTS Features General Description • Gain selectable + 1,-1 , +2 The EL5197C is a fixed gain amplifier with a bandwidth of 200MHz, making these amplifiers ideal for today’s high speed video and m oni
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EL5197C
200MHz
EL5397C)
400MHz,
EL5196C,
EL5396C)
EL5197C
200MHz,
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5-6105F
Abstract: No abstract text available
Text: mi cr oel ect r oni cs group Advance Data Sheet February 1998 Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.Ì10 Interface andTime-Slot Interchanger 1 Product Overview Programmable switching between local time-slots and H.100 bus, up to 256 connections
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T8100
100/H.
100/H
110-based
MV/P-90
DS98-130N
DS98-002NTNB)
5-6105F
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1207A
Abstract: lcd 3901
Text: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am plifier system intended fo r use in high resolution RGB m oni tor applications. In addition to the three m atched video am
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LM1205A/LM1207A
LM1205A/LM1207A
Hz/85
205A/LM
1207A
lcd 3901
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diode smd ED 84
Abstract: smd transistor NG
Text: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose
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FSYC9260D,
FSYC9260R
1-800-4-HARR
diode smd ED 84
smd transistor NG
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hv9100
Abstract: No abstract text available
Text: HV9100 HV9101 HV9102 HV9103 fàk Super te x inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information Min +V„ Max Feedback Voltage MOSFET Switch Package Options Max Duty Cycle b v d8S ^OS ONI 14 Pin Plastic DIP 14 Pin Ceramic DIP 20 Pin Plastic PLCC
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HV9100
HV9101
HV9102
HV9103
HV9100P
HV9100C
HV9100PJ
HV9101P
HV9101PJ
HV9102P
hv9100
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Untitled
Abstract: No abstract text available
Text: r All rights strictly reserved. Reproduction or issue to third parties in any form whatever is not permitted without written outhority from the proprietor. Property of B E R G ELECTRONICS BERG IC cS BLE CTO ONI Tous droits strictement reserves. Propriété d e © B E R G ELECTRONICS.
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Untitled
Abstract: No abstract text available
Text: FSS913AOD, FSS913AOR Semiconductor August 1998 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A , -100V , rQg ONi = 0.280J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose - File Number 4451.2
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FSS913AOD,
FSS913AOR
-100V,
-100V
280J2
1-800-4-HARR
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uc 3882
Abstract: KA 3882 ic 3882
Text: UCC2882 _ U IM IT R O D E UCC3882 PRELIMINARY Average Current Mode Synchronous Controller With 5-Bit DAC FEATURES DESCRIPTION • T he U C C 3882 com bines high precision reference and voltage m oni toring circu itry w ith average cu rre n t m ode PW M synchronous rectifi
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UCC2882
UCC3882
700kH
uc 3882
KA 3882
ic 3882
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Untitled
Abstract: No abstract text available
Text: FUJITSU MI C ROE L E C T R ONI C S 23E D 374T7t i S Q012Ö45 3 ASSP • Data Exchange C O D E C IC MB6020A Series Device Number Function Law MB6021A M-law MB6022A A-law Sync/Async Analog Outut (k fì) Supply Voltage (V) Package Alternate Source HD44234 ±5V±5%
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374T7t
MB6020A
MB6021A
HD44234
DIP-16P-M03
DIP-16C-C04
DIP-16G-M04
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TFC 718 S
Abstract: tfc 718 RQS series
Text: Data Sheet April 1997 mi cr oe l e c t r oni c s group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. The T7121 HDLC Interface for ISDN (HIFI-64) con
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T7121
HIFI-64)
T7250C.
DS96-357ISDN
DS90-087SMOS,
AY95-006ISDN,
TN96-01OISDN)
TFC 718 S
tfc 718
RQS series
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2N3751
Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
Text: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN
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0D0D223
2N3751
2N3752
2N3788
2N3850
2N3851
2N3852
2N4300
2N4305
2N4307
2N3853
2N3902
2N3928
2N3929
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fast switching pnp transistor 3A 60V
Abstract: 2N5872 SOLITRON DEVICES
Text: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION
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203mm)
fast switching pnp transistor 3A 60V
2N5872
SOLITRON DEVICES
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MC14066
Abstract: MC14016 74hc150 MC145042 hc4016 MC14066 applications cmos 4016 74HC4066 application note Mc14066 MOtorola equivalent mc14066
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Analog Sw itch/ M ultiplexer/D em ultiplexer M C 54/74H C 4066 High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 632-08 The M C 54/74HC4066 utilizes silicon-gate CMOS technology to achieve fast propagation delays, low ONI resistances, and low O F F-channel leakage
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54/74HC4066
HC4066
MC14016
MC14066.
HC4016
MC14504
HC4316)
DL129
MC14066
74hc150
MC145042
MC14066 applications
cmos 4016
74HC4066 application note
Mc14066 MOtorola
equivalent mc14066
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Untitled
Abstract: No abstract text available
Text: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,
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FSL23A0D,
FSL23A0R
350J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a
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FSJ055D,
FSJ055R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: G E C - NARC ONI MTLS LTD ES D 37L. Û501 DDG0G13 7 -6 L PLESSEY T-7</~i5 -o / Three Five Product Information GaAs M M IC Broadband Amplifier P35-4130 : 2 -1 2 GHz Features • Broadband, cascadable gain block. • Usable frequency range 1-14 GHz. • AGC control with gate bias. • ;
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DDG0G13
P35-4130
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mb87017
Abstract: mb4514a mb4514b MB87017A MT8870 MB87084 FPT-48P-M02 DIP-22P-M03 MB4507A MB4514
Text: F U J I T S U MI C ROE L E C T R ONI C S 0101010100000202020201000001 E3E D • 3 7 4 e17tjS OQ1SÔ41 1 T-ys-ö/ ASSP D TM F Dialer Device Number MB4507A Function Oscillator Frequency MHz Supply Current (mA) Package Alternate Source 3.58 20 to 105 DIP-22P-M03
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MB4507A
DIP-22P-M03
MB4514
FPT-24P-M02
MB4514A
DIP-22P-M03
MB4514B
DIP-22P-M02
mb87017
mb4514a
mb4514b
MB87017A
MT8870
MB87084
FPT-48P-M02
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