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    Untitled

    Abstract: No abstract text available
    Text: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		BD933; BD937; BD941 BD934; BD933 oo34s 003HS1S PDF

    b0951

    Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
    Text: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 O-220. 7Z82141 b0951 b0949 B0950 LL90 BD950 BD955 IEC134 PDF