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    Abstract: OPA8935HN
    Text: OPA8935HN A Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter


    Original     		OPA8935HN 100mA 400ns, --------------------130um po102 PDF

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    Abstract: No abstract text available
    Text: OPA8935HN A Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter


    Original     		OPA8935HN 100mA 400ns, --------------------130um PDF