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    Abstract: No abstract text available
    Text: OPA8950HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		OPA8950HN 400ns, PDF

    OPA8950HN

    Abstract: GaAlAs LED CHIP
    Text: OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		OPA8950HN 400ns, OPA8950HN GaAlAs LED CHIP PDF