TRF5916
Abstract: opnext SFP TRF5926 TRV5013 TRV50 trf5925 RCV5905AN opnext trv5020 STM-64 IR
Text: All rights reserved OPTICALENGINES 2002 OpNext, Inc. Optical Engines powering next generation networks OpNext provides the optical engines that light In today’s market, customers demand a high level of collaboration to optimize the performance, the reliability, and the cost of systems. OpNext
|
Original
|
PDF
|
25-year
t8-392-0441
oeb-072302
D-85622
TRF5916
opnext SFP
TRF5926
TRV5013
TRV50
trf5925
RCV5905AN
opnext
trv5020
STM-64 IR
|
laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
|
Original
|
PDF
|
200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
|
TR6143
Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Text: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility
|
Original
|
PDF
|
ODE-608-001B
TR6143
advantest TR6143
opnext laser diode
HP6655A
apc driver for laser diode
DESIGN AC VOLTMETER USING TWO DIODE
Tektronix TDS 460A manual
LDC-3722B
infrared laser diode
AM503
|
opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
|
Original
|
PDF
|
D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
|
opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
|
Original
|
PDF
|
D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
|
LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
|
Original
|
PDF
|
OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
|
OpNext
Abstract: opnext laser diode
Text: Opnext 642nm / 150mW Laser Diode HL6385DG Series World’s First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio Φ5.6mm Package High Output Power and Single Longitudinal Mode Laser Diode
|
Original
|
PDF
|
642nm
150mW
HL6385DG
150mW
150mW)
ODE-208-075
ODJ-208-074
current150mW
OpNext
opnext laser diode
|
dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
|
Original
|
PDF
|
ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
|
hl6360mg
Abstract: HL6361MG
Text: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for
|
Original
|
PDF
|
HL6360MG/61MG
ODE-208-010
HL6360MG/61MG
HL6360MG/61MG:
HL6360MG
hl6360mg
HL6361MG
|
009C
Abstract: HL6358MG HL6359MG
Text: HL6358MG/59MG ODE-208-009C Z Low Operating Current Visible Laser Diode Preliminary Rev.3 Jun. 09, 2006 Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
|
Original
|
PDF
|
HL6358MG/59MG
ODE-208-009C
HL6358MG/59MG
HL6358MG/59MG:
HL6358MG
HL6359MG
009C
HL6358MG
HL6359MG
|
HL6554MG
Abstract: No abstract text available
Text: HL6554MG ODE-208-036 Z Preliminary Rev.0 Jul. 13, 2005 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
|
Original
|
PDF
|
HL6554MG
ODE-208-036
HL6554MG
|
Untitled
Abstract: No abstract text available
Text: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
|
Original
|
PDF
|
HL6395MG/96MG
ODE2066-01
HL6395MG/96MG
HL6395MG
HL6395MG/96MG:
HL6396MG
|
Untitled
Abstract: No abstract text available
Text: HL7301MG/02MG ODE2004-00 P Preliminary Rev.0 Jun. 23, 2008 InGaAsP Laser Diode Description The HL7301MG/02MG are 0.73 m band InGaAsP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
|
Original
|
PDF
|
HL7301MG/02MG
ODE2004-00
HL7301MG/02MG
730nm
HL7301MG/02MG:
HL7301MG
HL7302MG
|
sumitomo connectors
Abstract: opnext Edd 44 OC-768 JP3407400005
Text: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement Multi-Source Agreement Enables Multiple Vendors to Produce 40 Gbit/s Optical Devices Based on a Unified Standard
|
Original
|
PDF
|
|
|
|
HE8811
Abstract: No abstract text available
Text: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
|
Original
|
PDF
|
HE8811
ODE-208-051
HE8811
HE8811:
|
HE7601SG
Abstract: No abstract text available
Text: HE7601SG ODE-208-023 Z Rev.0 Oct. 27, 2006 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
|
Original
|
PDF
|
HE7601SG
ODE-208-023
HE7601SG
HE7601SG:
|
HE8404SG
Abstract: 38485
Text: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997A Z Rev.1 Jan. 2003 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
|
Original
|
PDF
|
HE8404SG
ODE-208-997A
HE8404SG
HE8404SG:
38485
|
Untitled
Abstract: No abstract text available
Text: HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000B Z Rev.2 Mar. 2005 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
|
Original
|
PDF
|
HE8812SG
ODE-208-1000B
HE8812SG
HE8812:
|
Untitled
Abstract: No abstract text available
Text: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
|
Original
|
PDF
|
HL63101MG/102MG
ODE2065-01
HL63101MG/102MG
HL63101MG/102MG:
HL63101MG
HL63102MG
|
Untitled
Abstract: No abstract text available
Text: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
|
Original
|
PDF
|
HL6376DG
ODE-208-064B
HL6376DG
HL6376DG:
|
HL6555G
Abstract: No abstract text available
Text: HL6555G ODE-208-056B Z Rev.2 Oct. 12, 2006 Visible High Power Laser Diode for Measurement Description The HL6555G is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various types of optical equipment.
|
Original
|
PDF
|
HL6555G
ODE-208-056B
HL6555G
HL6555G:
120mA
|
HL6385DG
Abstract: No abstract text available
Text: HL6385DG ODE2001-00 M Rev.0 Apr. 03, 2008 Visible High Power Laser Diode Description The HL6385DG is 0.64 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.
|
Original
|
PDF
|
HL6385DG
HL6385DG
ODE2001-00
HL6385DG:
|
HL6398MG
Abstract: No abstract text available
Text: HL6397MG/98MG ODE2067-01 P Preliminary Rev.1 Jun. 03, 2009 High Temperature Low Operating Current Visible Laser Diode Description The HL6397MG/98MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
|
Original
|
PDF
|
HL6397MG/98MG
HL6397MG/98MG
ODE2067-01
HL6397MG/98MG:
HL6397MG
HL6398MG
HL6398MG
|
HL6385DG
Abstract: opnext Opnext Japan
Text: HL6385DG ODE-208-075A Z Visible High Power Laser Diode Tentative Specification Rev.1 Dec. 11, 2007 Description The HL6385DG is 0.64 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.
|
Original
|
PDF
|
HL6385DG
ODE-208-075A
HL6385DG
HL6385DG:
opnext
Opnext Japan
|
