TR6143
Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Text: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility
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ODE-608-001B
TR6143
advantest TR6143
opnext laser diode
HP6655A
apc driver for laser diode
DESIGN AC VOLTMETER USING TWO DIODE
Tektronix TDS 460A manual
LDC-3722B
infrared laser diode
AM503
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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OpNext
Abstract: opnext laser diode
Text: Opnext 642nm / 150mW Laser Diode HL6385DG Series World’s First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio Φ5.6mm Package High Output Power and Single Longitudinal Mode Laser Diode
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642nm
150mW
HL6385DG
150mW
150mW)
ODE-208-075
ODJ-208-074
current150mW
OpNext
opnext laser diode
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dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
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ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
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opnext l
Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Text: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-LAC,
LE7602-LAxxxC
LE7602-LAC
FOD-DS-00073
LE7602-LAC
opnext l
LE7602-LA350C
LE7602-LA180C
Hitachi DSA0045
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LB7678
Abstract: opnext Hitachi DSA0045
Text: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator
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LB7678
14-pin
LB7678
LB767
FOD-DS-00075
opnext
Hitachi DSA0045
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opnext
Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
Text: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-SAC
LE7602-SAC
LE7602-SAC,
FOD-DS-00076
opnext
LE7602-S
hitachi laser diode
opnext l
7Pin Connector
opnext laser diode
Hitachi DSA0045
opnext ps
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opnext
Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
Text: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been
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LB7677L
FOD-DS-00077
opnext
LB7677L
Hitachi DSA0045
opnext ps
Opnext t
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opnext
Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
Text: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been
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LE5302-HS
FOD-DS-00072
opnext
LE5302-HS
Hitachi DSA0045
opnext ps
hitachi laser diode
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hl6360mg
Abstract: HL6361MG
Text: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for
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HL6360MG/61MG
ODE-208-010
HL6360MG/61MG
HL6360MG/61MG:
HL6360MG
hl6360mg
HL6361MG
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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009C
Abstract: HL6358MG HL6359MG
Text: HL6358MG/59MG ODE-208-009C Z Low Operating Current Visible Laser Diode Preliminary Rev.3 Jun. 09, 2006 Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6358MG/59MG
ODE-208-009C
HL6358MG/59MG
HL6358MG/59MG:
HL6358MG
HL6359MG
009C
HL6358MG
HL6359MG
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HL6554MG
Abstract: No abstract text available
Text: HL6554MG ODE-208-036 Z Preliminary Rev.0 Jul. 13, 2005 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6554MG
ODE-208-036
HL6554MG
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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Untitled
Abstract: No abstract text available
Text: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL63101MG/102MG
ODE2065-01
HL63101MG/102MG
HL63101MG/102MG:
HL63101MG
HL63102MG
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Untitled
Abstract: No abstract text available
Text: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6395MG/96MG
ODE2066-01
HL6395MG/96MG
HL6395MG
HL6395MG/96MG:
HL6396MG
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HL6398MG
Abstract: No abstract text available
Text: HL6397MG/98MG ODE2067-01 P Preliminary Rev.1 Jun. 03, 2009 High Temperature Low Operating Current Visible Laser Diode Description The HL6397MG/98MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6397MG/98MG
HL6397MG/98MG
ODE2067-01
HL6397MG/98MG:
HL6397MG
HL6398MG
HL6398MG
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Untitled
Abstract: No abstract text available
Text: HL6386DG ODE-208-077 Z Visible High Power Laser Diode Preliminary Rev.0 Dec. 13, 2007 Description The HL6386DG is 0.64 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.
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HL6386DG
ODE-208-077
HL6386DG
HL6386DG:
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208017
Abstract: ODE-208-017 HL6312G HL6313G
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
ODE-208-017
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
208017
ODE-208-017
HL6312G
HL6313G
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Untitled
Abstract: No abstract text available
Text: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
ODE-208-064B
HL6376DG
HL6376DG:
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HL6364DG
Abstract: HL6365DG
Text: HL6364DG/65DG ODE-208-060 Z Low Operating Current Visible Laser Diode Preliminary Rev.0 May 17, 2006 Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6364DG/65DG
ODE-208-060
HL6364DG/65DG
HL6364DG/65DG:
HL6364DG
HL6365DG
HL6364DG
HL6365DG
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Untitled
Abstract: No abstract text available
Text: HL6366DG/67DG ODE-208-061A Z Low Operating Current Visible Laser Diode Preliminary Rev.1 Oct. 05, 2006 Description The HL6366DG/67DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6366DG/67DG
ODE-208-061A
HL6366DG/67DG
HL6366DG/67DG:
HL6366DG
HL6367DG
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HL6556MG
Abstract: No abstract text available
Text: HL6556MG ODE-208-041 Z Preliminary Rev.0 Feb. 06, 2007 AlGaInP Laser Diodes Description The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6556MG
ODE-208-041
HL6556MG
HL6556:
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HL6557MG
Abstract: No abstract text available
Text: HL6557MG ODE-208-053 Z Preliminary Rev.0 Feb. 22, 2007 AlGaInP Laser Diodes Description The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6557MG
ODE-208-053
HL6557MG
HL6557:
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