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    OSI 100 V Search Results

    OSI 100 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    CS4100V-01L Coilcraft Inc Current Sense Transformer, 24A, ROHS COMPLIANT Visit Coilcraft Inc
    ISL6719ARZ-T Renesas Electronics Corporation 100V Linear Bias Supply Visit Renesas Electronics Corporation
    ISL6719ARZ Renesas Electronics Corporation 100V Linear Bias Supply Visit Renesas Electronics Corporation
    ISL6720AARZ-T Renesas Electronics Corporation 100V Triple Linear Bias Supply Visit Renesas Electronics Corporation

    OSI 100 V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    OSI100-V-40K/15M Centronic Photodetectors Scan PDF

    OSI 100 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSC 232 CPE

    Abstract: RS -12V SDS RELAY RS -24V SDS RELAY RSL -12V SDS RELAY univac DS1 frame synchronization CMI 1990 MS NAS DC standards parts cross reference coded mark inversion 1990 mtbf slc TCP 8026
    Text: Philips Semiconductors Acronyms Networking acronyms A B ATM Adaptation Layer, two sublayers concerned with segmenting large PDUs into ATM cells; type 1 = CBR, 2 = VBR. See also SAR. B Bearer channel, a DS–0 for user trafrlc. BCC Block Check Code, a CRC or similarly calculated number


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    Untitled

    Abstract: No abstract text available
    Text: Hybrid Laser Diodes for Pulsed Operations 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified High Efficiency High Peak Power Emission 905nm Peak Emission Wavelength Low Voltage Operation


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    905nm PDF

    SE3208

    Abstract: DP-45 AL2007LA RA12
    Text: Preliminary Data Book Jupiter Internet Appliance 32bit Microprocessor Ver 1.1 Sep 18, 2002 Ver 1.1 PRELIMINARY Jupiter Jupiter High Performance Internet Appliance Processor Data Book  2002 Advanced Digital Chips Inc. All right reserved. No part of this document may be reproduced in any form


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    32bit SE3208 DP-45 AL2007LA RA12 PDF

    B400

    Abstract: C250 RM85
    Text: RM85 SMT 70 przekaŸniki miniaturowe • Styki bez kadmu • Wysokość 16 mm • Napięcie probiercze 5000 V / odległość izolacyjna 10 mm • Do montażu powierzchniowego SMT • Cewki AC i DC • Opakowanie do recyklingu • Uznania, certyfikaty, dyrektywy: RoHS,


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    B400

    Abstract: C250 RM87 RM87N
    Text: RM87N SMT 82 przekaŸniki miniaturowe • Styki bez kadmu • Wysokość 15,7 mm • Napięcie probiercze 5000 V / odległość izolacyjna 10 mm • Do montażu powierzchniowego SMT • Cewki AC i DC • Opakowanie do recyklingu • Uznania, certyfikaty, dyrektywy: RoHS,


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    RM87N B400 C250 RM87 PDF

    B400

    Abstract: C250 RM84
    Text: RM84 SMT 54 przekaŸniki miniaturowe • Styki bez kadmu • Wysokość 15,7 mm • Napięcie probiercze 5000 V / odległość izolacyjna 10 mm • Do montażu powierzchniowego SMT • Cewki AC i DC • Opakowanie do recyklingu • Uznania, certyfikaty, dyrektywy: RoHS,


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    ISO-13486

    Abstract: UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D
    Text: UV-DQ / DQC / DK SERIES new Planar Diffused UV Enhanced Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–DQ and UV–DQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity


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    200-400nm 190nm. 320nm. Sh4072 ISO-13486 UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D PDF

    B400

    Abstract: C250 EC50 GZT80 PW80 RM84 str wg 252
    Text: RM84 50 przekaŸniki miniaturowe • Styki bez kadmu • Wysokość 15,7 mm • Napięcie probiercze 5000 V / odległość izolacyjna 10 mm • Do obwodów drukowanych i gniazd wtykowych • Akcesoria: gniazda i moduły • Cewki AC i DC • Opakowanie do recyklingu


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    B400

    Abstract: C250 EC50 GZT80 PW80 RM85
    Text: RM85 58 przekaŸniki miniaturowe • Styki bez kadmu • Wysokość 15,7 mm • Napięcie probiercze 5000 V / odległość izolacyjna 10 mm • Do obwodów drukowanych i gniazd wtykowych • Akcesoria: gniazda i moduły • Cewki AC i DC • Opakowanie do recyklingu


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    computer Network Types diagram

    Abstract: ST0025803A computer networking diagram computer networking lan diagram "network interface cards"
    Text: Lesson 2: Connectivity and Internetworking Devices At a Glance Connectivity devices are devices used to make physical network connections. They do not make changes to the data or transmission route. Connectivity devices operate at the physical layer of the Open Systems


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    ST0025803A computer Network Types diagram ST0025803A computer networking diagram computer networking lan diagram "network interface cards" PDF

    CENTRONIC 36 pin

    Abstract: Centronic osi 100
    Text: CENTRONIC LTD 45E D m ^ S l f l ? OOOOD4fi 2 • CENT TY/-</5" TECHNICAL DATA SHEET Centronic Silicon Photodetectors Opto Hybrid Series OSI 100-40K/15M The OSI 100-40K/15M is the largest opto-hybrid detector we supply as standard. It can be used for applications such as weapon


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    100-40K/15M 100-40K/15M CENTRONIC 36 pin Centronic osi 100 PDF

    40PC015V1A

    Abstract: 40PC015V2A 40PC100G2A
    Text: LEAD STYLE 1 LEAD PIN OUT Vout GND Vs 3 2 1 - AUTOMOTIVE GRADE T - ENHANCED SOLDER JOINT 40PC O Q_ CD Osi CO CM PRESSURE RANGE 015 - 0 TO 15 PSI 100 - 0 TO 100 PSI 150 - 0 TO 150 PSI 250 - 0 TO 250 PSI 500 - 0 TO 500 PSI 030 - 0 TO 30 PSI 006 - 0 TO 300 mmHg


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    30JAN02 07JUL03 09FEB04 25JUN07 40PC006G2A 40PC006G3A 40PC150G1AS 40PC150G1AT 40PC015V1A 40PC015V2A 40PC100G2A PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTRONIC LTD 45E D • DDODOMfl 2 ■ CENT TECHNICAL DATA SHEET Centronic Silicon Photodetectors Opto Hybrid Series OSI100-40K/15M The OSI 100-40K/15M is the largest opto-hybrid detector we supply as standard. It can be used for applications such as weapon


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    OSI100-40K/15M 100-40K/15M 000004R PDF

    EE28

    Abstract: BP183
    Text: t _L_ I i 2 30 _L_ _L_ _I_ H G F E D C B_ _I in 8 1 max 3 4 5 c\j CVI 6 g 7 zz 8 0.8 CP W 9 un m# * & » # g « » li 5.5 5.5 5.5 5.5 11 © © -f 12 -f <o o eIT) Osi 13 UD » Os| 14 © j* 15 it 16 m Œ 100 MfìPi_h AC DC 5 0 0 V 17 19 20 i/a -h'jy-r


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    BP-098- 1G00A BP-183- EE28 BP183 PDF

    Untitled

    Abstract: No abstract text available
    Text: pouJW E>K^/S&ll*P/W W /P9row ss/aiÄ|/ ÉW0¿3 SÍ'ZÍ SI a 3 N o i s n o s n i m v h q _ ¿ h _— l =► N O I i IS O d 'nvi w 6¿¿00 50 7059 v ^7 OSI úsalos iN0° iN o a gsH 'a y v a o a n d '3"Wld333H -? 'À10W3SSV G31VyOddOON[


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    10W3SSV Wld333H G31VyOddOON[ 39WDN 030V0 533Nya310i 31310S 1QY1N00 y31VW d31S3A10d PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTRONIX LTD 45E 0 • 1RRS167 0000044 S M C E N T TV/-V5* TECH NIC AL D A T A SHEET Centronic Silicon Photodetectors Opto Hybrid Series O S I35-1M/2K5 The OSI 35-1M/2K5 range of opto-hybrid detectors have been introduced for applications as diverse as light fluctuation


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    1RRS167 I35-1M/2K5 35-1M/2K5 35-IR-IM PDF

    Star topology

    Abstract: No abstract text available
    Text: Volume 3* Issue 6 NOVEMBER - DECEMBER 2002 Past issues of the Extension are available. If you would like a copy, please send your request to info@ccontrols.com «EXTENSION A Technical Supplement to control NETW ORK 2002 Contemporary Control Systems, Inc. Glossary o f Industrial Ethernet Terms


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    100BASE-X 100BASE-TX 100BASE-FX 15-pin 10BASE-FL Star topology PDF

    lf7a

    Abstract: No abstract text available
    Text: b3E • 0015245 tiE M T fiE ? M IT S U B IS H I DGTL 0 T 4 ■ f 1I T 3 M I T S U B , S H I B IP O LAR D IGITAL ICs M54801P L O G IC F M D IV E R S IT Y R E C E IV E R C O N T R O L L E R DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 548Q 1P is an l2L sem iconductor in teg ra te d circuit


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    M54801P lf7a PDF

    Centronic osd 50

    Abstract: Centronic osi Centronic osd 15 Centronic
    Text: M CENT R G N I C INC* E-0 DIV 13E d | m s a s o TECHNICAL o Q ooast DATA 3 | T z^/~à1 SHEET OSI 5-E D E T E C T O R T he C entronic OSI 5-E device consists o f an OSD 5-E d ete cto r in a h yb rid c o m b in a tion , w ith a very-high gain, lo w noise am p lifie r. The c irc u it is designed fo r very good lin e a rity o f response over a w ide range o f


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    1829-B 450nm 550nm 655nm 900nm Centronic osd 50 Centronic osi Centronic osd 15 Centronic PDF

    AT93C46W SOIC 8-PIN

    Abstract: No abstract text available
    Text: Features • Low Voltage and Standard Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) - 1.8 (Vcc = 1.8V to 5.5V) • User Selectable Internal Organization - 1K: 1 2 8 x 8 or 6 4 x 1 6 - 2K: 2 5 6 x 8 or 1 2 8 x 1 6


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    128x16) 256x16) 0172K 07/98/xM AT93C46W SOIC 8-PIN PDF

    types of sensor

    Abstract: centronic osd 15 e photodiode eye response Centronic osd 50 centronic osd Centronic osd 15 IR SENSOR BPX65 osi 5k BPX65-100 BPX65 amplifier OSI5 Centronic
    Text: Op Amp Development System OSI 5-DEV The OSI 5-DEV Universal Sensor/Op Amp is a development system for low light level conditions where amplification is required. The OSI 5-DEV provides your designer with a flexible component for experimental purposes. This efficient low/noise development system combines sensor and op/amp into one compact building block with all key circuit


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    10-lead 10M/10K GAIN-OF10 types of sensor centronic osd 15 e photodiode eye response Centronic osd 50 centronic osd Centronic osd 15 IR SENSOR BPX65 osi 5k BPX65-100 BPX65 amplifier OSI5 Centronic PDF

    NJM2375A

    Abstract: No abstract text available
    Text: ÇÜRC3 NJM2375/A H > h P — J l i c Itt» mm m N J M 23 7 5 /A IÌ. E - r - 5 f c t ó i = M S l è + L f c * $ » # 3 ^ i 'P - ; n c -e -fo C I C li, — h T V J • $ '< - ? , % - & \ ■vasa, n f f w a M t t & * M M - * - t í n * a u * u 9 k I S S S f l E , 3S - t z > X n ^ / ^ U


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    INJM2375/A NJM2375/AÃ NJM2375Ali, NJM2375CD E/NJM2375 SS0P14, NJM2375A NJM2375D/AD NJM2375V/AV NJM2375M/AM PDF

    AT93C46

    Abstract: AT93C56 AT93C57 AT93C66 SOIC-8s2 4k aq
    Text: Features • Low Voltage an d S tan d ard V o ltage O peratio n - 5.0 V cc = 4 .5 V to 5.5 V - 2.7 (V cc = 2 .7 V to 5.5 V ) - 2.5 (V cc = 2 .5 V to 5.5 V ) - 1.8 (V cc = 1.8V to 5.5 V ) • U s er S e le c ta b le Intern al O rg an izatio n - 1 K: 128 x 8 o r 6 4 x 16


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    256x8 128x16 512x8 256x16 AT93C46/56/57/66 AT93C46 AT93C56 AT93C57 AT93C66 SOIC-8s2 4k aq PDF

    Centronic

    Abstract: OSI5 Centronic 5902 BPX65 amplifier BPX65-100 150M centronic photodiodes silicon osi Centronic osi 35
    Text: CENTRONIC INCn E-0 »IV b2E T> m S B S O □ a O C m ß ‘1 3 2 ^ • CENB Series OSI Optical Silicon Integrated Detector The OSI Series integrates Centronic high performance single element photodiodes with selected operational amplifiers in a single hybrid


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    900nm BPX65-100 27-28XX GAIN-OF10 10M/10K Centronic OSI5 Centronic 5902 BPX65 amplifier 150M centronic photodiodes silicon osi Centronic osi 35 PDF