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    P CHANNEL LOW GATE CHARGE 100A Search Results

    P CHANNEL LOW GATE CHARGE 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd

    P CHANNEL LOW GATE CHARGE 100A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH50P6FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH80P6FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA PDF

    STRH12P10ESY1

    Abstract: STRH12P10ESY3
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3 PDF

    JESD97

    Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248
    Text: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH12P10ESY1 STRH12P10ESY3 O-257AA 34Mev/cm JESD97 STRH12P10ESY1 STRH12P10ESY3 MG 5248 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		STRH80P6FSY3 O-254AA 100kRad 34Mev/cm PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		UT3419 UT3419 UT3419G-AE2-R UT3419G-AE3-R OT-23-3 OT-23 QW-R502-391 PDF

    STRH50P6FSY1

    Abstract: STRH50P6FSY3
    Text: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA


    Original     		STRH50P6FSY3 O-254AA 100kRad 34Mev/cm STRH50P6FSY1 STRH50P6FSY3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    STRH40P10FSY3

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm STRH40P10FSY3 PDF

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    Untitled

    Abstract: No abstract text available
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced


    Original     		STS8C5H30L STS8C5H30L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		UT3443 UT3443 UT3443G-AG6-R OT-26 QW-R502-557 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mar. 2005 AOD413, AOD413L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance


    Original     		AOD413, AOD413L AOD413 AOD413L O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.


    OCR Scan     		FQB22P10, FQI22P10 D2PAK/TO-263 D2PAK/TO-263 PDF

    D425 transistor

    Abstract: d425 mosfet
    Text: Single P-channel MOSFET ELM340703A-N •General description ■Features ELM340703A-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-15A


    Original     		ELM340703A-N ELM340703A-N 00E-01 00E-02 D-42-5 D425 transistor d425 mosfet PDF

    UTD405

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD405 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTD405 can provide excellent RDS ON , low gate charge and low gate resistance by using advanced trench technology. This device is well suited for high current load


    Original     		UTD405 UTD405 UTD405L-TN3-R UTD405G-TN3-R O-252 QW-R502ues QW-R502-199 PDF

    AO8403

    Abstract: AO8403L
    Text: AO8403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as


    Original     		AO8403 AO8403 AO8403L PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34423AA-N •General description ■Features ELM34423AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-8A


    Original     		ELM34423AA-N ELM34423AA-N PDF

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800 PDF

    IRF5850

    Abstract: No abstract text available
    Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		IRF5850 IRF5850 OT-23 i252-7105 PDF