AAT4601
Abstract: AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Text: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dual-channel 500mA currentlimited P-channel MOSFET power switch designed
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AAT4626
AAT4626
500mA
AAT4601
AAT4625
AAT4626IAS-1-T1
AAT4626IAS-T1
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AAT4626IAS-1-T1
Abstract: AAT4626-1 4626 AAT4626IHS-1-T1 AAT4601 AAT4625 AAT4626 AAT4626IAS-1-B1 AAT4626IAS-B1 1uF 450V power capacitor
Text: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch™ is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dualchannel 500mA current-limited P-channel MOSFET
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AAT4626
AAT4626
500mA
AAT4626IAS-1-T1
AAT4626-1
4626
AAT4626IHS-1-T1
AAT4601
AAT4625
AAT4626IAS-1-B1
AAT4626IAS-B1
1uF 450V power capacitor
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4626
Abstract: AAT4601 AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Text: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch™ is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dualchannel 500mA current-limited P-channel MOSFET
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AAT4626
AAT4626
500mA
AAT4626IHS-1-T1
AAT4626IHS-T1
4626
AAT4601
AAT4625
AAT4626IAS-1-T1
AAT4626IAS-T1
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P-CHANNEL SC89
Abstract: FDY4000CZ SC89
Text: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description Max rDS on 0.7: at VGS = 4.5V, ID = 600mA Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power
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FDY4000CZ
600mA
500mA
-350mA
-300mA
-150mA
FDY4000CZ
P-CHANNEL SC89
SC89
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Untitled
Abstract: No abstract text available
Text: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET General Description Features Max rDS on 0.7: at VGS = 4.5V, ID = 600mA Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power
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FDY4000CZ
600mA
500mA
-350mA
-300mA
-150mA
FDY4000CZ
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FDY4000CZ
Abstract: No abstract text available
Text: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description Max rDS on 0.7: at VGS = 4.5V, ID = 600mA Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power
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FDY4000CZ
600mA
500mA
-350mA
-300mA
-150mA
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201946A
Abstract: No abstract text available
Text: DATA SHEET AAT4626 USB Dual-Channel Power Switch General Description Features The AAT4626 SmartSwitch is part of Skyworks' Application Specific Power MOSFET ASPM product family. It is a dual-channel 500mA current-limited P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with inputs ranging from
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AAT4626
AAT4626
500mA
01946A
201946A
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FDY4000CZ
Abstract: SC89
Text: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET tm Features General Description Q1: Max rDS on = 0.85Ω at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and
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FDY4000CZ
500mA
600mA
-350mA
-300mA
-150mA
FDY4000CZ
SC89
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POWER TRANSISTORS 10A 400v pnp
Abstract: full wave bridge rectifier ic FULL WAVE mosfet RECTIFIER CIRCUITS schottky 400v CMLDM7003 CMLM8205 P-Channel mosfet 400v CTLS5064-M532 CBRHDSH2-100 Schottky Diode 40V 5A bridge
Text: Latest Products Multi Discrete Module CMLM8205 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode Features: Benefits: Applications: MOSFET • rDS on (3.0Ω) • VGS(th) (1.0V) • Space saving, multi-discrete device The CMLM8205 is a Multi Discrete Module consisting of a single
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CMLM8205
280mA,
500mA
CMLM8205
OT-563
100mA)
com/info/CMLM8205
com/product/CMLM8205
CET3906E
200mA
POWER TRANSISTORS 10A 400v pnp
full wave bridge rectifier ic
FULL WAVE mosfet RECTIFIER CIRCUITS
schottky 400v
CMLDM7003
P-Channel mosfet 400v
CTLS5064-M532
CBRHDSH2-100
Schottky Diode 40V 5A bridge
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Untitled
Abstract: No abstract text available
Text: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 2.0Ω @ VGS = -1.8V -500mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMP21D5UFB4
-700mA
-500mA
AEC-Q101
DS35284
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XC6377
Abstract: XC6377A503SR XC6377A303SR XC6376A333
Text: XC6376/77 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters ◆ P Channel Power MOSFET Built-in ◆ Maximum Output Current: 500mA ◆ Output Voltage Range: 1.5~6.0V ◆ Oscillator Frequency: 300kHz ◆ Maximum Duty Ratio: 100% ◆ High Efficiency: 95%
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XC6376/77
500mA
300kHz
500mA
XC6377A333
IOUT10mA300mA
300mA
IOUT300mA10mA
XC6377
XC6377A503SR
XC6377A303SR
XC6376A333
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diode marking 141c
Abstract: DMP21D5UFB4
Text: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 1.5Ω @ VGS = -2.5V -600mA 2.0Ω @ VGS = -1.8V -500mA
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DMP21D5UFB4
-700mA
-600mA
-500mA
-380mA
AEC-Q101
DS35284
diode marking 141c
DMP21D5UFB4
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DMP21D5UFD
Abstract: No abstract text available
Text: DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features RDS(ON) max -20V 1.0Ω @ VGS = -4.5V -600mA 1.5Ω @ VGS = -2.5V -500mA 2.0Ω @ VGS = -1.8V • • • • • • • • ID TA = +25°C Package X1-DFN1212-3
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DMP21D5UFD
-600mA
X1-DFN1212-3
-500mA
-400mA
-250mA
AEC-Q101
DS35931
DMP21D5UFD
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12V 10A BJT
Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-001
12V 10A BJT
Logic Level Gate Drive mosfet
SUM202MN
SUM202
BJT IC Vce
power BJT PNP
BJT pnp 45V
Drive Base BJT
Low Capacitance bjt
BJT IC Vce 5v
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Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-002
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Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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KSD-T6T001-001
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usb pre amplifier circuit diagram
Abstract: ADM1072 ADM1072ARQ RQ-16
Text: = Dual, USB 2.0 Full/Standby Power Controller with Supply Steering Preliminary Technical Data ADM1072 GENERAL DESCRIPTION FEATURES 500mA Load Current 100mA in Standby Mode 135m⍀ On Resistance Switchable Current Limit 50µA Typical Quiescent Current 10nA Typical Shutdown Current
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ADM1072
500mA
100mA
16-Pin
ADM1072
135mW
RQ-16)
usb pre amplifier circuit diagram
ADM1072ARQ
RQ-16
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usb pre amplifier circuit diagram
Abstract: RQ-16 ADM1072 ADM1072ARQ
Text: PRELIMINARY TECHNICAL DATA = Dual, USB 2.0 Full/Standby Power Controller with Supply Steering Preliminary Technical Data ADM1072 GENERAL DESCRIPTION FEATURES 500mA Load Current 100mA in Standby Mode 135m⍀ On Resistance Switchable Current Limit 50µA Typical Quiescent Current
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ADM1072
500mA
100mA
16-Pin
ADM1072
135mW
RQ-16)
usb pre amplifier circuit diagram
RQ-16
ADM1072ARQ
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mos short circuit protection schematic diagram
Abstract: usb port amplifier circuit diagram AN1441 ST7263 ST890 St72638 power supplys mosfet short circuit protection schematic diagram SCT2000
Text: AN1441 APPLICATION NOTE ST890: A HIGH SIDE SWITCH FOR PCMCIA AND USB APPLICATIONS A. Randazzo 1. INTRODUCTION ST890 is a low voltage, P-Channel MOSFET power switch, intended for high side load switching applications. Its main applications are PCMCIA slots, Portable Equipment and Access bus slots. ST890
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AN1441
ST890:
ST890
ST890
ST890.
mos short circuit protection schematic diagram
usb port amplifier circuit diagram
AN1441
ST7263
St72638
power supplys
mosfet short circuit protection schematic diagram
SCT2000
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2N7002K
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A 3 G ・Rugged and reliable.
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2N7002K
10/-0ate
500mA
200mA
190mA,
2N7002K
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82801AA
Abstract: MIC2010 MIC2010-1CQS MIC2010-1PCQS MIC2010-2CQS MIC2070
Text: MIC2010/2070 Micrel MIC2010/MIC2070 USB Power Controller Advance Information General Description Features The MIC2010 is a dual channel USB power switch designed to support the power distribution requirements for USB Wakeup from the ACPI S3 state. The MIC2010 will directly
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MIC2010/2070
MIC2010/MIC2070
MIC2010
500mA
res20)
16-Pin
82801AA
MIC2010-1CQS
MIC2010-1PCQS
MIC2010-2CQS
MIC2070
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C 3619
Abstract: tps 3619 VLF5014ST package LTC3619 LTC3619B LTC3619E LTC3619EDD LTC3619EMSE LTC3619I LTC3619IDD
Text: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation:
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LTC3619
400mA/800mA
25mVP-P)
25MHz
TSSOP-16E,
DFN-16
MS10E,
DFN-10
C 3619
tps 3619
VLF5014ST package
LTC3619
LTC3619B
LTC3619E
LTC3619EDD
LTC3619EMSE
LTC3619I
LTC3619IDD
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15A ZENER DIODE
Abstract: No abstract text available
Text: UC1707 UC2707 UC3707 y UNITRODE Dual Channel Power Driver FEATURES DESCRIPTION • Two independent Drivers The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain
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1000pF
16-Pin
20-Pin
UC1707
UC2707
UC3707
15A ZENER DIODE
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2SK1728
Abstract: No abstract text available
Text: 2SK1728 2062 LD Lo w D rive S e rie s V dss^ IO O V N Channel Power MOSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vqss Gate to Source Voltage
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2SK1728
250mm2X
2SK1728
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