CM75TF-12H
Abstract: m4 12h igbt mitsubishi cm75tf-12h
Text: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM75TF-12H
CM75TF-12H
m4 12h
igbt mitsubishi cm75tf-12h
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CM50TF-28H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM50TF-28H
CM50TF-28H
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CM50TF-28H
Abstract: igbt 800v 50a aa 118 diode
Text: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M L B J Y DIA. (4 TYP.) AA L TAB #110, t = 0.5
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CM50TF-28H
CM50TF-28H
igbt 800v 50a
aa 118 diode
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CM50TF-24H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM50TF-24H
CM50TF-24H
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ltc2209
Abstract: No abstract text available
Text: LTC2209 16-Bit, 160Msps ADC Features Description Sample Rate: 160Msps n 77.3dBFS Noise Floor n 100dB SFDR n SFDR >84dB at 250MHz 1.5V P-P Input Range n PGA Front End (2.25V or 1.5V P-P P-P Input Range) n 700MHz Full Power Bandwidth S/H n Optional Internal Dither
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LTC2209
16-Bit,
160Msps
100dB
250MHz
700MHz
130Msps:
LTC2208
16-Bit)
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CM100TF-12H
Abstract: m4 12h
Text: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM100TF-12H
CM100TF-12H
m4 12h
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igbt mitsubishi cm75tf-12h
Abstract: CM75TF-12H H bridge 300v 30a GW 540 DIODE
Text: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM75TF-12H
igbt mitsubishi cm75tf-12h
CM75TF-12H
H bridge 300v 30a
GW 540 DIODE
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CM5024
Abstract: CM50TF-24H A 40202
Text: MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM50TF-24H
CM5024
CM50TF-24H
A 40202
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m4 12h
Abstract: CM100TF-12H
Text: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5
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CM100TF-12H
m4 12h
CM100TF-12H
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40841
Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096,
CA3096A
CA3096A,
CA3096C
40841
40841 MOSFET
CA3096AE
CA3096
CA3096AM
CA3096AM96
CA3096CE
CA3096E
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Untitled
Abstract: No abstract text available
Text: LTC2205-14 14-Bit, 65Msps ADC DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps 78.3dB SNR and 98dB SFDR 2.25VP-P Range SFDR >90dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H
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LTC2205-14
14-Bit,
65Msps
65Msps
25VP-P
140MHz
700MHz
600mW
105Msps:
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G86 770 A2
Abstract: MABAES0060 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 LTC2204 rf transistor 2.5GHz 33D9
Text: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTIO U FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H
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LTC2205/LTC2204
16-Bit,
65Msps/40Msps
100dB
25VP-P
140MHz
700MHz
610mW/480mW
G86 770 A2
MABAES0060
LTC2205-14
LTC2206
LTC2206-14
LTC2207
LTC2207-14
LTC2204
rf transistor 2.5GHz
33D9
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Untitled
Abstract: No abstract text available
Text: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H
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LTC2205/LTC2204
16-Bit,
65Msps/40Msps
100dB
25VP-P
140MHz
700MHz
610mW/480mW
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G86 770 A2
Abstract: LTC2205IUK LTC2204 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 marking code g81
Text: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H
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LTC2205/LTC2204
16-Bit,
65Msps/40Msps
100dB
25VP-P
140MHz
700MHz
610mW/480mW
G86 770 A2
LTC2205IUK
LTC2204
LTC2205-14
LTC2206
LTC2206-14
LTC2207
LTC2207-14
marking code g81
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Untitled
Abstract: No abstract text available
Text: 1 N 4 3 83 G P thru 1 N 4385G P 1 N 4 5 85 G P and 1 N 4586G P I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . GLASS PASSIVATED JUNCTION PLASTIC RECTIFIERS VO LTA G E - 200 TO 1000 Volts CURRENT - 1.0 Ampere FEATURES M ECH ANICAL DATA • P la stic Package carries U n de rw riters
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4385G
4586G
DDD37Ã
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MPF256
Abstract: field-effect transistor
Text: MPF256 silicon Advance Information JUNCTION FIELD-EFFECT TRANSISTOR SILICON IM-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S IL IC O N N -C H A N N E L . . . d e p le tio n m ode ju n c tio n fie ld -e ffe c t tra n s is to r designed f o r lo w nois* general a m p lifie r a p p lic a tio n s .
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MPF256
MPF256
field-effect transistor
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A659
Abstract: No abstract text available
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK210 U n it in m m F M T U N E R A P P L IC A T IO N S . t-Üft 2.£-Q3 V H F B A N D A M P L IF IE R A P P L IC A T IO N S . + Q.2 r> l. b - Q i 5 • H ig h P o w er G a in : G p s = 24dB Typ. ( f = 100M H z)
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2SK210
A659
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2Sd114
Abstract: ALY TRANSISTOR 2SD113 transistor ALY 2SD114-O AC73
Text: v U 3 > N P N t a m è & b v 's it z t r 2SD113, 2SD114 SILICON NPN DIFFUSED JUNCTION TRANSISTOR » « h u b I n d u s tr ia l A p p lic a t io n s v + x fm o o DC—DC:a a b — 0 A u d io P o w e r A m p lifie r P o w e r S w itc h in g A p p lic a tio n ,
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2SD113,
2SD114
2SD113)
2SD114)
2SD113
2Sd114
ALY TRANSISTOR
transistor ALY
2SD114-O
AC73
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2SK72
Abstract: 2SK49 ISS400 iss 400 2SK72 C differential amplifier application transistor 2sk49
Text: ICON N-CHANNEL JUNCTION DUAL FIELD EFFECT TRANSISTOR a ft i i ffl INDUSTRIAL APPLICATIONS U n it o ¡¿aiOHAX. D i f f e r e n t i a l A m plifier A p p l i c a t i o n Ö ß l f i Ä r - t : N ? = C L 5 d B T y p . 0a5OMAX. CRg = 1 0 0 k n . Vn p -P = 1 7 # ( Typ.)
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2SK72
120Hz)
2SK49
v0i02
400aA
800aA
28K72-0
2SK72
2SK49
ISS400
iss 400
2SK72 C
differential amplifier application
transistor 2sk49
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Untitled
Abstract: No abstract text available
Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN
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TD3002Y
VNDS06
VPDS06
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BCX78
Abstract: BCX79 BCX58 BCX59
Text: BCX78 BCX79 J . PHILIPS i n t e r n a t i o n a l SbE ]> 711Gö2b 0042004 10S M P H I N P-N-P SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 2 7 " # 6? P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59.
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BCX78
BCX79
7110fl2b
0D420fl4
BCX58
BCX59.
A4BB018
T-27-09
BCX78
BCX79
BCX59
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MFQ5460P
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D I t»3b?a5M 00flfci758 1 | *p#3~25 QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS MFQ5460P ' . . . d e p le tio n m o de Type A ju n c tio n fie id -e ffe c t tra n s is to rs d esig n ed fo r use in g en e ra l-p u rp o se a m p lifie r a pp licatio n s.
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00flfci758
2N5460
MFQ5460P
MFQ5460P
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2SK19
Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Text: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )
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l00MHz)
a45pP
2SK19
transistor 2sk19
2SK19BL
2SK19-BL
transistor 2sk 70
transistor 2sk
220O
OAT 3Z
transistor kt 301
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BCX58
Abstract: BCX59 BCX78 BCX79 bcx58 transistors
Text: BCX58 BCX59 PHILIPS INTERNATIONAL SbE D Bi 711002b 0042000 SbT « P H I N T -2-7-0^ N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA
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BCX58
BCX59
T-27-Ã
BCX78
BCX79.
BCX58
MSB012
BCX59
BCX79
bcx58 transistors
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