P TRANSISTOR Search Results

P TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

P TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HPB-R1 Abstract: HPB-A1 HPB-E1 HPB-R2 AD419 IEC255-5-1977 Yamatake hpb IR 5MM receiver 97 transistor scan Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET E M IT T E R R E C E IV E R H P B -P 1 H P B -T 1 H P B -E 1 H P B -R 1 H P B -A 1 OPEN COLLECTOR OF NPN TRANSISTOR H P B -P 2 H P B -T 2 H P B -E 1 H P B -R 2 H P B -A 2	OCR Scan	30VDC AD41940E HPB-R1 HPB-A1 HPB-E1 HPB-R2 AD419 IEC255-5-1977 Yamatake hpb IR 5MM receiver 97 transistor scan	PDF
PU4412 Abstract: transistor C1505 PU3112 PU3212 PU4112 PU4212 PU4512 Text: Power Transistor Arrays PU3112, P U 4 H 2 , PU4412 P U 3112, P U 4112, P U 4412 P ackage Dimensions U nit:m m P U 3112 Silicon NPN Epitaxial Planar Type 20.5max. Pow er Amplifier, Switching C om plem entary Pair with P U 3 2 1 2 , P U 4 2 1 2 , P U 4 5 1 2	OCR Scan	PU3112, PU4412 PU4112, PU3212, PU4212, PU4512 PU3112: PU4112: PU4412 transistor C1505 PU3112 PU3212 PU4112 PU4212 PU4512	PDF
smd 2t1 Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1 Text: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE PMBTA63 PMBTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.	OCR Scan	PMBTA63 PMBTA64 OT-23) PMBTA13/14. PMBTA64 smd 2t1 smd transistor 2t1 MARKING CODE SMD IC marking p2U 2T1 SOT-23 sot-23 MARKING CODE 2T1	PDF
PU421 Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic Text: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •	OCR Scan	PU3213, PU4213, PU4513 PU3113, PU4113, PU4413 PU3213: PU421 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic	PDF
BPT-BP314 Abstract: PT05 DARx KP3A BPX21 Text: SILICON PHOTO TRANSISTORS MODEL: B P T -B P x21 , B P T -B P x l4 , B P T -K P x A l , B P T -F P x E l , B P T -N P x C l . A PPLICA TIO N S • Remote Control • Sm oke D etector • Automatic Control System - PC Mouse - Optical Encoder A B SO LU T E NAXIMUM R A T IN G S T a=25'C	OCR Scan		PDF
transistor 669 Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor Text: G E SOLID STATE 01 D E \| 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:	OCR Scan	CA3096, CA3096A, CA3096C RCA-CA3096CE, CA3096E, CA3096AE CA3096AE. 92CS-33305 CA3096H transistor 669 CA3096E RCA-CA3096CE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor	PDF
2SA682-Y Abstract: 2SC1382 2SA682 2SA682-O AC46C 2SA682O transistor lt 186 Text: 2SA682 v ' J = l > P N P x f c ; ° # * v T J l ^ f ' ;7 > v : * * P C T ^ S SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U nit in mm O M edium P o w e r A m p lifier A p p lic a tio n s O D riv e r S ta g e A m p lifier A p p lic a tio n s • r S iitE E 'C 'f" •	OCR Scan	2SA682 2SC1382Â 2SC1382 150mA 500mA 500mA, 500mA -150mA 2SA682 2SA682â 2SA682-Y 2SA682-O AC46C 2SA682O transistor lt 186	PDF
str 40200 Abstract: No abstract text available Text: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 \| CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:	OCR Scan	CA3096, CA3096A, CA3096C CA3096H str 40200	PDF
thyristor firing circuits Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits	OCR Scan	ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A	PDF
PU4120 Abstract: 100-C PU3120 PU3220 PU4220 PU4420 PU4520 Scans-0013919 Text: Power Transistor Arrays PU 3120, P U 4120, P U 4420 PU3120, PU4120, PU4420 • P a c k a g e D im e n s io n s Silicon NPN Triple-Diffused Planar Darlington Type PU3120 P o w e r A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith P U 3 2 2 0 , P U 4 2 2 0 , P U 4 52 0	OCR Scan	PU3120, PU4120, PU4420 PU3220, PU4220, PU4520 PU3120: PU4120 100-C PU3120 PU3220 PU4220 PU4420 PU4520 Scans-0013919	PDF
PU4111 Abstract: PU4411 PU3110 PU3111 PU3211 PU4110 PU4211 PU4511 Text: Power Transistor Arrays PU3111, PU4111, PU4411 P U 3111, P U 4 1 1 1 , P U 4 4 1 1 P a c k a g e D im e n s io n s P U 3 1 11 Unit: m m Silicon NPN Triple-Diffused Planar Type 4. 2max. 20. 5max. •T S - ¡T 2 £ un P o w e r Am p lifier, S witching C o m p l e m e n ta r y Pair with P U 3 2 1 1 , P U 4 2 1 1 , P Ü 4 5 1 1	OCR Scan	PU3111, PU4111, PU4411 PU3211, PU4211, PU4511 PU3111: PU4111 PU4411 PU3110 PU3111 PU3211 PU4110 PU4211 PU4511	PDF
2SA839 Abstract: 2SC1669 2SC166 AC75 Text: 2SA839 S/'J = l > P N P = S f f i t t . * + H £ l>7 > v X ? SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE O A udio P o w e r A m p lifier A p p lic atio n s O D riv e r S tag e A m p lifier A p p lica tio n s • : V ceo * “ 9 ' 5” 1 ' /4 * 3 .6 ± 0 .2	OCR Scan	2SA839 2SC1669 2SC1669 O-220AB 500mA, 2SA839 2SA839â 2SC166 AC75	PDF
2SA675 Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749 Text: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N	OCR Scan	2N6734 O-237A 2500G 2N6735 ZSA637 25A639 O-92B 2SA675 2sc1279 2SA685 2SA749 2SC505 2SC506 2SC507 transistors 2SA749	PDF
PU3119 Abstract: PU4119 ci 55 PU3219 PU4219 PU4419 PU4519 Text: Power Transistor Arrays PU3119, PU4119, PU4419 P U 3119, P U 4119, P U 4419 P ackage Dimensions PU3119 Silicon NPN Triple-Diffused Planar Type 20. 5max. Pow er Amplifier, Switching C om plem entary Pair with P U 3 2 1 9 , P U 4 21 9, P U 4 5 1 9 ° * i. jdnnpw	OCR Scan	PU3119, PU4119, PU4419 PU3219, PU4219, PU4519 PU3119: PU3119 PU4119 ci 55 PU3219 PU4219 PU4419 PU4519	PDF

2SD1110 Abstract: 2SB849 2SB849A 2SD1110A Text: 2 S B 8 4 9 /2 S D 1 1 1 0 ,2 S B 8 4 9 A /2 S D 1 1 1 OA P N P /N P N = M J£ S i& m m n tim m m P N P /N P N S ilicon T rip le D iffused Transistor A udio Frequency P ow er A m p lifie r o t t a t a w r i > < 0 * * 3 5 W ~ 4 0 W ( R l = 8 Q, Single P - P +	OCR Scan	2SB849, 2SD1110, 2SB849A, 2SD1110A CycIeS50 2SD1110A 2SD1110 2SB849 2SB849A	PDF
2SB82 Abstract: 2SB828 722G ic b82 V05E Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G SASiYO P N P /N P N E pitaxial P lanar Silicon Transistors 50V/12A Switching Applications 1 A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current	OCR Scan	2SB828/2SD1064 0V/12A 2SB828 2SB82 2SB828 722G ic b82 V05E	PDF
Untitled Abstract: No abstract text available Text: SILICON P TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 965 (Unit in mm APPLICATIONS ) P o w e r A m p lifie r A p p lic a tio n s. D r i v e r S t a g e A m p lifie r A p p lic atio n s. ( »FEATURES ) • C om p lem entary to K T C 2235 • MAXIMUM RATINGS	OCR Scan	75MAX. 80MAX. 60MAX. 92MOD -10mA, 500mA, -50mA -500mA	PDF
PU3116 Abstract: PU3216 PU4116 PU4216 PU4416 PU4516 Text: Power Transistor Arrays PU3116, PU411Ó, PU4416 PU3116, PU4116, PU4416 P a c k a g e D im e n s io n s P U 3116 Silicon NPN Epitaxial Planar Type P o w e r A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith P U 3 2 1 6 , P U 4 2 1 6 , P U 4 5 1 6	OCR Scan	PU3116, PU411Ã PU4416 PU4116, PU3216, PU4216, PU4516 PU3116: PU3116 PU3216 PU4116 PU4216 PU4416 PU4516	PDF
2SC509 Abstract: 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S Text: 509 g 2SA 2 5 5 9 / U D ^ P N P Ilf ? ^ ? J W B h > y ^ P C T S Ä ^SILIC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O •* -i y T > O A u d io P o w e r A m p l i f i e r A p p l i c a t i o n s o S w itch in g A p p lic a tio n s INDUSTRIAL APPLICATIONS	OCR Scan	2sa509g 2SC509Â 2SC509 100X100X1MAÃ 2SC509 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S	PDF
BDX45 Abstract: No abstract text available Text: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS S ilico n p-n-p planar D a rlin g to n transistors fo r in d u stria l sw itch in g a p p lica tio ns ei.g. p rin t hamm er, solenoid, relay and lam p d riving. Encapsulated in a T O -126 plastic package w ith c o lle c to r connected	OCR Scan	BDX45 BDX46 BDX47 BDX47	PDF
2SA1263N Abstract: 2SC3180N 100U 2SA1263 Text: AOK P roduct S p e cifica tio n AOK Semiconductor 2SA1263N Silicon P N P Pow er Transistors D E S C R IP T IO N • W ith T O -3 P l p ackag e • C om plem ent to type 2 S C 3 1 8 0 N • 2 S A 1 2 6 3 with short pin A P P L IC A T IO N S • P ow er am plifier applications	OCR Scan	2SA1263N 2SC3180N 2SA1263 2SA1263N 2SC3180N 100U	PDF
ASY77 Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74 Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15	OCR Scan	ACY33 ACY34 ACY35 ACY36 ACY38 ACY39 ACY40 ACY41 ACY44 ASY26 ASY77 OC75 GERMANIUM SMALL SIGNAL TRANSISTORS oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74	PDF
ph425 Abstract: PN4248 PN4250 N4249 PN4249 PH42 n4250 Text: PN4248, PN4249, PN4250 PNP SILICON AP LOW NOISE SMALL SIGNAL TRANSISTORS P N 4 2 2 4 8 , P N 4 2 4 9 , P N 4 2 5 0 a re P N P silicon CASE T O ' 92A Planartransistors fo r AF low noise p re a m p lifie r applications. EBC ABSOLUTE MAXIMUM RATINGS P.N4248 P.N4250	OCR Scan	PN4248, PN4249, PN4250 pn42248, pn4250 N4248 H4250 PN4249 300mW ph425 PN4248 N4249 PN4249 PH42 n4250	PDF
PVAPOX Abstract: Horizontal Deflection Switching Transistors Text: BIPOLAR TRANSISTORS Diffused Collector Technology Al P-VAPOX Features: THERMAL OXIDE High Voltage Capability Fast Switching Tighter hFE Control N+ N+ P+ P+ P High Ruggedness P N- N- N+ N+ Applications: Horizontal Deflection for Colour TVs & Monitors BACK	Original		PDF

P TRANSISTOR Search Results

P TRANSISTOR Result Highlights (5)

P TRANSISTOR Datasheets Context Search

HPB-R1

PU4412

smd 2t1

PU421

BPT-BP314

transistor 669

2SA682-Y

str 40200

thyristor firing circuits

PU4120

PU4111

2SA839

2SA675

PU3119

2SD1110

2SB82

Untitled

PU3116

2SC509

BDX45

2SA1263N

ASY77

ph425

PVAPOX