Untitled
Abstract: No abstract text available
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
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PDF
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P120
Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
P120
ZXMP2120E5
ZXMP2120E5TA
ZXMP2120G4
FS50D
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
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PDF
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ZXMP2120G4TA
Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
ZXMP2120G4TA
ZXMP2120G4TC
ZXMP2120E5
ZXMP2120G4
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PDF
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ZXMP2120E5
Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
ZXMP2120E5
ZXMP2120G4
ZXMP2120G4TA
ZXMP2120G4TC
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PDF
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sot23-5 marking ha
Abstract: SOT23-5 TBA
Text: ZXMP2120E5 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = 150mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120E5
-200V;
150mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
sot23-5 marking ha
SOT23-5 TBA
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXMP2120G4 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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Original
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
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PDF
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TC2320TG
Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
-200mA
ultrasound transducer circuit driver 1mhz
TC2320
mosfet buffers output current 100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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Original
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TC2320
-200V
TC2320TG
TC2320TG
inherent00mA
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PDF
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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Original
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TC2320
-200V
TC2320TG
TC2320TG
i00mA
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PDF
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TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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IRFR9220,
IRFU9220
TA17502.
TC227
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PDF
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IRF9640
Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Text: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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Original
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
-200V
IRF9640
RF1S9640
TA17522
IRF9641
IRF9642
IRF9643
RF1S9640SM
TB334
TO-220aB 11A
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PDF
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ZXMP2120FFTA
Abstract: No abstract text available
Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,
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Original
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ZXMP2120FF
OT23F
D-81541
ZXMP2120FFTA
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,
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Original
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ZXMP2120FF
OT23F
48mbH
D-81541
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PDF
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IRFF9230
Abstract: No abstract text available
Text: IRFF9230 Data Sheet January 2002 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9230
-200V,
-200V
IRFF9230
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PDF
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IRFF9220
Abstract: No abstract text available
Text: IRFF9220 Data Sheet January 2002 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs Features • -2.5A, -200V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel
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Original
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IRFF9220
-200V,
-200V
TA17502.
IRFF9220
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PDF
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FSF9250R4
Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,
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JANSR2N7404
FSF9250R4
-200V,
R2N74
FSF9250R4
1E14
2E12
JANSR2N7404
Rad Hard in Fairchild for MOSFET
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PDF
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IRFD9220
Abstract: No abstract text available
Text: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD9220
IRFD9220
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PDF
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irf9230
Abstract: IRF9231 IRF9232 IRF9233 TB334
Text: IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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Original
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
-200V
irf9230
IRF9231
IRF9232
IRF9233
TB334
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PDF
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IRFF9230
Abstract: TA17512
Text: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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Original
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IRFF9230
-200V,
-200V
IRFF9230
TA17512
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD5P20 / KSMU5P20 200V P-Channel MOSFET TO-252 TO-251 Features • • • • • -3.7A, -200V, RDS on = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested General Description These P-Channel enhancement mode power field effect
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Original
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KSMD5P20
KSMU5P20
O-252
O-251
-200V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance
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OCR Scan
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-200V
TC2320TG
TC2320
TC2320TG
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PDF
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IRFP9240
Abstract: TA17522 irfp9243
Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
TA17522.
RFP9240,
RFP9241,
RFP9242,
IRFP9240
TA17522
irfp9243
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PDF
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irfp9240
Abstract: No abstract text available
Text: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
-150V
RFP9240,
irfp9240
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PDF
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