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    P-CHANNEL DEPLETION MODE FET Search Results

    P-CHANNEL DEPLETION MODE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL DEPLETION MODE FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ultra FAST DMOS FET Switches

    Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
    Text: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET


    OCR Scan     		SD2100/SST2100 SD2100/SST2100 OT-143. SD2100 SST2100 OT-143 XSD2100 10OfiA 1A44322 000102b ultra FAST DMOS FET Switches depletion fet depletion mode fet FAST DMOS FET Switches PDF

    SD2100

    Abstract: No abstract text available
    Text: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the


    OCR Scan     		SD2100 O-206AF) PDF

    P-Channel Depletion-Mode

    Abstract: MARKING 2299 mos diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 analog transistor 026A
    Text: TP5322 P-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		TP5322 TP5322 O-243AA OT-89) DSFP-TP5322 A112106 P-Channel Depletion-Mode MARKING 2299 mos diode p3c TP5322K1 TP5322K1-G TP5322N8 analog transistor 026A PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 P-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		TP5322 TP5322 O-243AA OT-89) DSFP-TP5322 A112106 PDF

    J FET RF Cascode Input

    Abstract: T431 Teledyne Semiconductor teledyne fet u
    Text: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«


    OCR Scan     		SD2100 SD2100DË SD2100DE/Ft SO-16) OT-143) J FET RF Cascode Input T431 Teledyne Semiconductor teledyne fet u PDF

    CF739 R

    Abstract: CF739 siemens gaas fet
    Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain


    OCR Scan     		023ti3SQ 0G17342 CF739 00MHz 23b32ü Q017347 CF739 CF739 R siemens gaas fet PDF

    mt5300

    Abstract: No abstract text available
    Text: ^ S u p e rte x me. DN2535 DN2540 Low Thresh old Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information O rder Num ber / Package b v dsx/ ^D S O N b v dgx (m ax) '□ss (m in) TO-39 TO-92 TO -220 TO -243AA* DIE 350V 250 150mA DN2535N2


    OCR Scan     		DN2535 DN2540 150mA 150mA DN2535N2 DN2540N2 DN2535N3 DN2540N3 DN2535N5 DN2540N5 mt5300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3135 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / ^DS ON Id ss B V dgx (max) (min) TO-243AA* Die* 350V 35ß 180mA DN3135N8 DN3135NW * S am e as S O T-89. P roducts shipped on 2 000 piece c a rrie r ta p e reels.


    OCR Scan     		DN3135 O-243AA* 180mA DN3135N8 DN3135NW 150mA, 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV dsx / ^D S ON Idss b v dgx (max) (min) TO-243AA* Die 350V 10ß 200mA DN3535N8 DN3535NW * S a m e as SO T-89. P roducts shipped on 2 000 piece c a rrie r tape reels.


    OCR Scan     		DN3535 O-243AA* 200mA DN3535N8 DN3535NW PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3145 Pre-Release Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / ^D S ON Idss b v dgx (max) (min) TO-243AA* 450V 60ß 120mA DN3145N8 * S a m e as S O T-89. P roduct shipped on 2 000 piece c a rrie r tape reels.


    OCR Scan     		DN3145 O-243AA* 120mA DN3145N8 100mA, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _| N-Channel Depletion Mode Lateral DMOS FET _ CUlOQIC CO RPO RATIO N v SD2100/SST2100 F E A TU R E S D E S C R IP T IO N toN 1 .Ons • Fast S w itc h in g . • Lo w C a p a c ita n c e . c rss 2p f


    OCR Scan     		SD2100/SST2100 SST2100 100nA PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line G allium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical ap p lic atio n s are ce llu la r radio s and personal com m unication


    OCR Scan     		MRF9811T1 MRF9811T1 18A-05, OT-143) MRF9611T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: S u p e r te x in c . DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on Order Number / Package BVosx/ R ds <o n > I dss BVdgx max (min) TO-92 TO-243AA* Die 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND ' Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    OCR Scan     		DN2530 DN2530N3 O-243AA* DN2530N8 DN2530ND 200mA OT-89. -243A PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3525 Pre-Release Information N-Channel Depletion-Mode Vertical DMOS FETs < CD Ordering Information * max 250V 6.0Ì2 300mA D n X b v dgx Ipss (min) R d S(ON) Order Num ber / Package TO-243AA* Die* DN3525N8 DN3525NW S a m e as SO T-89. P roducts shipped on 2 000 piece c a rrie r ta p e reels.


    OCR Scan     		DN3525 300mA O-243AA* DN3525N8 DN3525NW 150mA, 150mA PDF

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 PDF

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor PDF

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets PDF

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion PDF

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet PDF

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion PDF

    MOS FET SOT-223

    Abstract: sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET
    Text: CPC5603C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings


    Original     		CPC5603C OT-223 CPC5603C DS-CPC5603C-R01 MOS FET SOT-223 sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET PDF

    MOS FET SOT-223 ON

    Abstract: mosfet depletion CPC5602C CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2
    Text: CPC5602C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 350V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings


    Original     		CPC5602C OT-223 CPC5602C DS-CPC5602C-R03 MOS FET SOT-223 ON mosfet depletion CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2 PDF

    CPC5602C

    Abstract: CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2 bo75
    Text: CPC5602C N Channel Depletion Mode FET Features • • • • • • • Low On-resistance 8 ohms Breakdown voltage 350V minimum High input impedance Low input and output leakage Small package size SOT-223 PC Card PCMCIA Compatible PCB Space and Cost Savings


    Original     		CPC5602C OT-223 CPC5602C DS-CPC5602C-R3 CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2 bo75 PDF

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola PDF