Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P-CHANNEL FET Search Results

    P-CHANNEL FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ◆N-Channel/P-channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. (N-ch) : 0.110Ω(MAX.) (P-ch) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP135A1145SR is an N-channel/P-channel Power MOS


    Original     		XP135A1145SR XP135A1145SR PDF

    Untitled

    Abstract: No abstract text available
    Text: ◆N-Channel/P-channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. (N-ch) : 0.110Ω(MAX.) (P-ch) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP135A1145SR is an N-channel/P-channel Power MOS


    Original     		XP135A1145SR XP135A1145SR PDF

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY PDF

    FET pair n-channel p-channel

    Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to


    Original     		AN804 21-Jun-94 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG inherent00mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG i00mA PDF

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA PDF

    FET pair n-channel p-channel

    Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.


    Original     		AN804 10-Mar-97 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A


    Original     		6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751 PDF

    mtm76325

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS


    Original     		2002/95/EC) MTM76325 MTM76325 PDF

    6AM13

    Abstract: 2SJ173 2SJ176 2SK1094 2SK971 6AM1
    Text: 6AM13 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V ID = 5 A P-channel: RDS (on) ≤ 0.12 Ω, VGS = –10 V ID = –5 A


    Original     		6AM13 SP-12TA 2SK971 O-220AB) 2SK1094 O-220FM) 2SJ173 2SJ176 6AM13 2SJ173 2SJ176 2SK1094 2SK971 6AM1 PDF

    MTM76320

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS


    Original     		2002/95/EC) MTM76320 MTM76320 PDF

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H RTJC PDF

    2SK109

    Abstract: 6am12 2SJ172 2SJ175 2SK1093 2SK970
    Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A


    Original     		6AM12 SP-12TA 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 2SK109 6am12 2SJ172 2SJ175 2SK1093 2SK970 PDF

    2SJ410

    Abstract: 2SK1957 4AM15
    Text: 4AM15 Silicon N Channel/P Channel Power MOS FET Array Application SP–12TA High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.5Ω, VGS = 10V , ID = 2A P Channel : RDS(on) ≤ 0.9Ω, VGS = -10V , ID = -2A • Low drive current


    Original     		4AM15 2SJ410 2SK1957 4AM15 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A


    Original     		4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751 PDF

    gd79

    Abstract: Hitachi 2SJ Hitachi DSA002751
    Text: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A


    Original     		6AM13 2SK971 O-220AB) 2SK1094 O-220FM) 2SJ173 2SJ176 gd79 Hitachi 2SJ Hitachi DSA002751 PDF

    d467

    Abstract: No abstract text available
    Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel


    Original     		MCA002 MCA002 200mA d467 PDF

    2SJ172

    Abstract: 2SK970 4AM16
    Text: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching


    Original     		4AM16 2SJ172 2SK970 4AM16 PDF

    TEA-1035

    Abstract: NEC 2SJ330 2SJ330 MEI-1202 TC-2465 tc2465
    Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Ü— r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ330 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lam p driver.


    OCR Scan     		2SJ330 2SJ330 IEI-1209) TEA-1035 NEC 2SJ330 MEI-1202 TC-2465 tc2465 PDF

    2SJ329

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET N E C kf * A P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ329 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ329 is P-channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lamp driver.


    OCR Scan     		2SJ329 2SJ329 IEI-1209) MEI-1202 TEA-1035 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance


    OCR Scan     		-200V TC2320TG TC2320 TC2320TG PDF

    2SJ328

    Abstract: 2SJ328-Z MEI-1202 TEA-1035
    Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.


    OCR Scan     		2SJ328, 2SJ328-Z 2SJ328 IEI-1209) 2SJ328-Z MEI-1202 TEA-1035 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


    OCR Scan     		6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM) PDF