U420B
Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary
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Power247TM,
U420B
IRFR P-Channel MOSFET
sfr 135
BALLAST CFL
U210B
U220B
cfl ballast
CFL lamp
Complementary MOSFETs
electronic ballast
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fairchild mosfet selection guide
Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics
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Power247TM,
fairchild mosfet selection guide
FQP27P06
FQA6N80
FQP2N90
fairchild korea
FQP17P06
FQPF*3n60
FQA7N80
fairchild p channel mosfet
FQA19N60
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15A POWER TRANSISTOR FOR SMPS
Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch
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FAN7031,
FAN7023,
FAN7005
FIN7216-01
FAN7556
FAN7601
FSA3357
QVE00033
Power247TM,
15A POWER TRANSISTOR FOR SMPS
list of n channel power mosfet
FQPF*10n20c
detailed vfd circuit diagram for motor
FAN7601 application data
list of P channel power mosfet
80a charger transformer
dual Phototransistor mouse
FQPF10N20C
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sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
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IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
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a106 capacitor
Abstract: 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017 HIP6017EVAL1 HIP6019 HIP6019EVAL1 T60-52 mosfet T60
Text: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor
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HIP6017,
HIP6019
AN9800
HIP6019EVAL1
HIP6017
a106 capacitor
4490 mosfet
B45 SO8
ATX MOTHERBOARD CIRCUIT diagram
HIP6017EVAL1
T60-52
mosfet T60
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PDF
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atx power supply schematic
Abstract: 39-29-9042 ATX12v schematic HIP6601ACB ATX12V HIP6301EVAL2 HIP6503EVAL1 PGA423 TP10 Molex Quick mate
Text: Three-Phase Buck Switching Converter for Pentium 4 Processors HIP6301EVAL2 TM Application Note August 2000 AN9906 Author: Bogdan M. Duduman Introduction the 5V output of the ATX supply (take necessary precautions, as the resistor may get very hot). The increased bandwidth and faster operation of the newest
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HIP6301EVAL2)
AN9906
HIP6301based
2V/10A
atx power supply schematic
39-29-9042
ATX12v schematic
HIP6601ACB
ATX12V
HIP6301EVAL2
HIP6503EVAL1
PGA423
TP10
Molex Quick mate
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MOSFET FOR SWITCHING FREQUENCY OF MORE THAN 20mhz
Abstract: AN-7500
Text: Understanding Power MOSFETs October 1999 Application Note Introduction /Title 7500 Subect Under tandng ower OSETs, nteril orpoation) Autho ) Keyords ) Cretor () DOCI FO dfark Pageode Useutines DOCIEW dfark Power MOSFETs (Metal Oxide Semiconductor, Field Effect
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TA17465
Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Text: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated
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RF4E20N50S
HUF75
337G3,
HUF753
TB334
RF4E20N50S
O-268
RF4E20N50ST
TA17465
RF4E20N50
power mosfet 500v 20a circuit
A1025
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AN72
Abstract: AN-7500
Text: Understanding Power MOSFETs Application Note Introduction [ /Title AN72 44 /Subject (Under standing Power MOSFETs, Intersil Corporation) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Power MOSFETs (Metal Oxide Semiconductor, Field Effect
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Untitled
Abstract: No abstract text available
Text: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in
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RFD4N06L,
RFD4N06LSM
RFD4N06LSM
TA09520.
TB334
RFD4N06LSM9A
O-252
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high side and low side dual channel gate driver
Abstract: C-111 ED-4701 HIP6302 HIP6303 HIP6602A HIP6602ACB HIP6602ACB-T
Text: HIP6602A TM Data Sheet August 2000 Dual Channel Synchronous-Rectified Buck MOSFET Driver The HIP6602A is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP63xx
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HIP6602A
HIP6602A
HIP63xx
high side and low side dual channel gate driver
C-111
ED-4701
HIP6302
HIP6303
HIP6602ACB
HIP6602ACB-T
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1E14
Abstract: 2E12 2N7274D 2N7274H 2N7274R
Text: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM230
2N7274D,
2N7274R
2N7274H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
2N7274D
2N7274H
2N7274R
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HIP6602CB
Abstract: C-111 ED-4701 HIP6302 HIP6303 HIP6602 HIP6602CB-T
Text: HIP6602 TM Data Sheet August 2000 Dual Channel Synchronous-Rectified Buck MOSFET Driver The HIP6602 is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP63xx
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HIP6602
HIP6602
HIP63xx
HIP6602CB
C-111
ED-4701
HIP6302
HIP6303
HIP6602CB-T
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HIP6601ACB
Abstract: MO-220-VGGC HIP6601A HIP6601ACB-T HIP6601ECB HIP6603A HIP6603ACB HIP6603ACB-T HIP6603ECB HIP6604
Text: HIP6601A, HIP6603A, HIP6604 TM Data Sheet February 2001 File Number Synchronous Rectified Buck MOSFET Drivers Features The HIP6601A, HIP6603A and HIP6604 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck
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HIP6601A,
HIP6603A,
HIP6604
HIP6603A
HIP6604
HIP63xx
ISL65xx
HIP6601A
HIP6601ACB
MO-220-VGGC
HIP6601ACB-T
HIP6601ECB
HIP6603ACB
HIP6603ACB-T
HIP6603ECB
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pdp scan driver
Abstract: fan7361* application
Text: FAN7361,FAN7362 High-Side Gate Driver Features Description • Floating Channel Designed for Bootstrap Operation to +600V The FAN7361/FAN7362, a monolithic high-side gate driver IC, can drive MOSFETs and IGBTs which operate up to +600V. Fairchild’s high voltage process and common-mode noise canceling techniques
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FAN7361/FAN7362
FAN7361
FAN7362
250mA/500mA
FAN7361/FAN7362,
pdp scan driver
fan7361* application
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high side gate driver GTO
Abstract: No abstract text available
Text: FAN7361, FAN7362 High-Side Gate Driver Features Description Floating Channel Designed for Bootstrap Operation to The FAN7361/FAN7362, a monolithic high-side gate driver IC, can drive MOSFETs and IGBTs that operate up to +600V. Fairchild’s high-voltage process and commonmode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level shift circuit offers high-side
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FAN7361,
FAN7362
FAN7361/FAN7362,
250mA/500mA,
high side gate driver GTO
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FRF9250R
Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Text: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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FRF9250D,
FRF9250R,
FRF9250H
-200V,
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRF9250R
1E14
2E12
FRF9250D
FRF9250H
Rad Hard in Fairchild for MOSFET
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FRK260
Abstract: No abstract text available
Text: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK260D,
FRK260R,
FRK260H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
FRK260
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Untitled
Abstract: No abstract text available
Text: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 14A, 100V, RDS on = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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4.5V TO 100V INPUT REGULATORS
Abstract: No abstract text available
Text: HUF76613D3, HUF76613D3S Semiconductor March 1999 Advance Inform ation 100V, 0.124 Ohm, 14A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs File Number 4689.3 Features Ultra Low On-Resistance, r^ g p N = 0.1 15£2, VGS= 1 0 \/
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OCR Scan
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HUF76613D3,
HUF76613D3S
00A/ns
4.5V TO 100V INPUT REGULATORS
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76107P
Abstract: ms101c DS20A TA76107
Text: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.
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HUF76107P3
HUF76107P3
AN7260.
76107P
ms101c
DS20A
TA76107
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d3s diode
Abstract: d3s schottky Ic d3s DIODE D3S 90
Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies
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22kHz
HUF75345P3
HUF75344P3
HRF3205
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
HUF75329P3
HUF75345S3/S3S
d3s diode
d3s schottky
Ic d3s
DIODE D3S 90
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Untitled
Abstract: No abstract text available
Text: in terd i HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321D3,
HUF75321D3S
AN7254
AN7260.
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76107d
Abstract: TA76107 F76107D3S F7610 dlis
Text: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive
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HUF76107D3,
HUF76107D3S
HUF76107D3S
AN7260.
76107d
TA76107
F76107D3S
F7610
dlis
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PDF
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