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    P0 SOT 363 Search Results

    P0 SOT 363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    P0 SOT 363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF LDTB114ELT1G LDTB114ELT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF LDTD123ELT1G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    178 15T

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G


    Original     		PDF L9015TLT1G L9014. 3000/Tape L9015TLT3G 10000/Tape 178 15T

    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


    Original     		PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3

    diode T3 Marking

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141WKT1G LM1MA142WKT1G SC-70 70/SOTâ LM1MA141WKT1G diode T3 Marking

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage


    Original     		PDF LBC817-40WT1G

    MSD601

    Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
    Text: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA


    Original     		PDF MSD601 OT-23 18-Sep-06 MSD601 Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141KT1G LM1MA142KT1G 70/SOTâ OT-323/SC-70 3000/Tape LM1MA141KT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original     		PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    MSB709

    Abstract: SC-75 SOT-353 b1
    Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100


    Original     		PDF MSB709 OT-23 MSB709 18-Sep-06 SC-75 SOT-353 b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diode LMBD7000LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Package LMBD7000LT1G Shipping SOT–23 3000/Tape & Reel LMBD7000LT3G SOT–23


    Original     		PDF LMBD7000LT1G LMBD7000LT3G 3000/Tape 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar


    Original     		PDF LRB501V-40T1G OD-323 3000/Tape LRB501V-40T3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6


    Original     		PDF L4401DW1T1G L4401DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751V- 40T1G Features 1 Small surface mounting type SC-76/SOD-323 (2)Low reverse current and low forward voltage. (3)High reliability (4)Pb-Free package is available. Construction silicon epitaxial planar


    Original     		PDF LRB751V- 40T1G SC-76/SOD-323 LRB751V-40T1G OD-323/SC-76 3000/Tape LRB751V-40T3G 10000/Tape

    LRB751S-40T1

    Abstract: SC-75 SOD3232
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751S-40T1 Features 1 Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar SC-79/SOD-523 Pb-Free Package is Available.


    Original     		PDF LRB751S-40T1 SC-76/SOd323 SC-79/SOD-523 LRB751S-40T1= 360mm LRB751S-40T1 SC-75 SOD3232

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8550HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8550HXLT1G L8550H L8550HPLT1G 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR Peak Forward Current Peak Forward Surge Current


    Original     		PDF LBAS21LT1G 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.


    Original     		PDF L1SS226LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HXLT1G L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.


    Original     		PDF L1SS184LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050XLT1G FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050XLT1G L8050 L8050PLT1G 3000/Tape L8050PLT3G 10000/Tape L8050QLT1G L8050QLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel


    Original     		PDF L2SC2412KXLT1G L2SC2412KQLT1G L2SC2412KQLT3G L2SC2412KRLT1G L2SC2412KRLT3G L2SC2412KSLT1G L2SC2412KSLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking


    Original     		PDF LBA277T1