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    Untitled

    Abstract: No abstract text available
    Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A


    Original     		PDF VNB10N07/K10N07FM VNP10N07FI/VNV10N07 VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 VNB10N07, VNK10N07FM, VNV10N07

    P11NM60AFP

    Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
    Text: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω


    Original     		PDF STP11NM60A STP11NM60AFP STB11NM60A-1 O-220/TO-220FP/I2PAK STP11NM60AFP O-220 P11NM60AFP B11NM60A P11NM60A STP11NM60A p11nm60 STB11NM60A-1

    STB45N10L

    Abstract: No abstract text available
    Text: STB45N10L N-CHANNEL 100V - 0.028 Ω - 45A I2PAK/D2PAK POWER MOS TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB45N10L 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STB45N10L 100oC O-262) O-263) O-262 O-263 STB45N10L

    STB45NF06

    Abstract: No abstract text available
    Text: STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 • ■ VDSS RDS on ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of


    Original     		PDF STB45NF06 STB45NF06

    STP12NM50FP

    Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
    Text: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A


    Original     		PDF STP12NM50 STP12NM50FP STB12NM50 STB12NM50-1 O-220/FP/D2PAK/I2PAK STP12NM50/FP STB12NM50 STP12NM50FP 12NM50 STB12NM50-1

    4NC60

    Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4NC60 STB4NC60-1 STP4NC60FP

    11NM60

    Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/TO-220FP/D2PAK/I2PAK STP11NM60 STB11NM60 O-220 11NM60 STP11NM60FP STB11NM60-1

    STGB3NB60HD

    Abstract: STTA306
    Text: STGB3NB60HD N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT TYPE V CES V CE sat IC STGB3NB60HD 600 V < 2.8 V 3A • ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGB3NB60HD O-263 O-263) STGB3NB60HD STTA306

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP

    VNB14N04

    Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
    Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14


    Original     		PDF VNB14N04/K14N04FM VNP14N04FI/VNV14N04 VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 VNB14N04, VNK14N04FM, VNV14N04 VNB14N04 VNK14N04FM VNP14N04FI diode SS 16

    W 20NM60

    Abstract: 20nm60 STB20NM60-1 STP20NM60 STB20NM60 STP20NM60FP diode k 0368
    Text: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ VDSS RDS on 600 600 600 600 < < < < V V V V 0.29 0.29 0.29 0.29 Ω


    Original     		PDF STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 O-220/FP/D2PAK/I2PAK STP20NM60 STB20NM60 W 20NM60 20nm60 STB20NM60-1 STP20NM60FP diode k 0368

    stp6nc60fp

    Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP6NC60 STP6NC60FP STB6NC60-1 O-220/TO-220FP/I2PAK 6NC60 O-220 O-220FP stp6nc60fp stp6nc60fp equivalent STB6NC60-1

    L4940

    Abstract: L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85
    Text: L4940XX5, L4940XX85 L4940XX10, L4940XX12 Very low drop 1.5 A regulator Features • Precise 5, 8.5, 10, 12 V outputs ■ Low dropout voltage 450 mV typ. at 1 A ■ Very low quiescent current ■ Thermal shutdown ■ Short circuit protection ■ Reverse polarity protection


    Original     		PDF L4940XX5, L4940XX85 L4940XX10, L4940XX12 O-220 L4940 O-220, O-220FP L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85

    KD1084

    Abstract: KD1084AD2T18R KD1084ADT-R KD1084AXX KD1084AXX18
    Text: KD1084AXX KD1084AXX18 5 A low drop positive voltage regulator adjustable and fixed Features • Typical dropout 1.3 V at 5 A ■ Three terminal adjustable or fixed output voltage 1.8 V, 3.3 V. ■ Guaranteed output current up to 5 A ■ Output tolerance ±1 % at 25 °C and ± 2 % in full


    Original     		PDF KD1084AXX KD1084AXX18 KD1084 KD1084AD2T18R KD1084ADT-R KD1084AXX KD1084AXX18

    8NC50

    Abstract: STB8NC50-1 STP8NC50 STP8NC50FP
    Text: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP8NC50 STP8NC50FP STB8NC50-1 O-220/TO-220FP/I2PAK 8NC50 O-220 O-220FP STB8NC50-1 STP8NC50FP

    L9 Zener

    Abstract: STB5NC70Z STB5NC70Z-1 STP5NC70Z STP5NC70ZFP
    Text: STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP5NC70Z/FP 700V <2Ω 4.6 A STB5NC70Z/-1 700V <2Ω 4.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω


    Original     		PDF STP5NC70Z STP5NC70ZFP STB5NC70Z STB5NC70Z-1 O-220/FP/D STP5NC70Z/FP STB5NC70Z/-1 L9 Zener STB5NC70Z-1 STP5NC70ZFP

    L9 Zener

    Abstract: STB8NC70Z STB8NC70Z-1 STP8NC70Z STP8NC70ZFP
    Text: STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP8NC70Z/FP 700V < 1.2 Ω 6.8 A STB8NC70Z/-1 700V < 1.2 Ω 6.8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω


    Original     		PDF STP8NC70Z STP8NC70ZFP STB8NC70Z STB8NC70Z-1 O-220/FP/D2PAK/I2PAK STP8NC70Z/FP STB8NC70Z/-1 O-220 O-220FP L9 Zener STB8NC70Z-1 STP8NC70ZFP

    VNB10N07

    Abstract: VNK10N07FM VNP10N07FI VNV10N07
    Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A


    Original     		PDF VNB10N07/K10N07FM VNP10N07FI/VNV10N07 VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 VNB10N07, VNK10N07FM, VNV10N07 VNB10N07 VNK10N07FM VNP10N07FI

    STB5NC50

    Abstract: STB5NC50-1 STP5NC50 STP5NC50FP
    Text: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω


    Original     		PDF STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 O-220/FP/D2PAK/I2PAK STP5NC50 STB5NC50 O-220 STB5NC50-1 STP5NC50FP

    B80NE03L

    Abstract: JESD97 STB80NE03L-06 b80ne
    Text: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description


    Original     		PDF STB80NE03L-06 B80NE03L JESD97 STB80NE03L-06 b80ne

    ISD 1720

    Abstract: STB100NF03L-03-1
    Text: STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION


    Original     		PDF STB100NF03L-03-1 O-262 ISD 1720 STB100NF03L-03-1

    P22NM60

    Abstract: STB22NM60 STB22NM60-1 STF22NM60 STP22NM60 STW22NM60 ST T4 0560 F22NM60 V4011 w22nm60
    Text: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 • ■ ■ ■ ■ VDSS RDS on 600 600 600


    Original     		PDF STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 O-220/FP/D2PAK/I2PAK/TO-247 STP22NM60 STB22NM60 STB22NM60-1 P22NM60 STF22NM60 STW22NM60 ST T4 0560 F22NM60 V4011 w22nm60

    b200NF

    Abstract: B200NF03 STB200NF03 STB200NF03-1 STB200NF03T4 STP200NF03
    Text: STP200NF03 STB200NF03 STB200NF03-1 N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB200NF03/-1 STP200NF03 • ■ ■ VDSS RDS on ID 30 V 30 V <0.0036 Ω <0.0036 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0032Ω


    Original     		PDF STP200NF03 STB200NF03 STB200NF03-1 PAK/TO-220 STB200NF03/-1 b200NF B200NF03 STB200NF03-1 STB200NF03T4 STP200NF03

    GCBZ670

    Abstract: STB75NE75 25c016
    Text: STB75NE75 N - CHANNEL 75V - 0.01 Q. - 75A - D^PAK STripFET POWER MOSFET TYPE STB75NE75 V dss R d S o i i Id 75 V < 0 . 0 1 3 Q. 75 A • . . . TYPICAL R D S (o n ) =0.01 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		PDF STB75NE75 STB75NE75 O-263 GCBZ670 25c016