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    P2503BDG Search Results

    P2503BDG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2503BDG Unknown N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    P2503BDG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P2503BDG

    Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem
    Text: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2503BDG O-252 SEP-30-2004 P2503BDG P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)


    Original     		PDF ELM32404LA-S ELM32404LA-S P2503BDG O-252

    P2503

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)


    Original     		PDF ELM32404LA-S ELM32404LA-S P2503BDG O-252 P2503

    ELM32404LA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM32404LA-S •概要 ■特点 ELM32404LA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 37mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32404LA-S O-252 P2503BDG ELM32404LA

    p2003bdg

    Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
    Text: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been


    Original     		PDF DMN3024LSD DMN3024LSS DMN2027LK3 DMP3025LK3 DMN3020LK3 DMN3024LK3 DMN4009LK3 DMN4015LK3 DMN4030LK3 DMN4036LK3 p2003bdg p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32404LA-S •概要 ■特長 ELM32404LA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 37mΩ (Vgs=4.5V)


    Original     		PDF ELM32404LA-S P2503BDG O-252