Diode Gfg 55a
Abstract: No abstract text available
Text: PDM1102H P2HM1102H MOSFET 110A 250V P2HM1102H PDM1102H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧
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PDM1102H
P2HM1102H
P2HM1102H
CharacteristicsTC25
150MAX
Diode Gfg 55a
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INDUCTION HEATING mosfet
Abstract: P2HM1102H
Text: MOSFET MODULE P2HM1102H Dual 110A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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/500V
P2HM1102H
300KHz
INDUCTION HEATING mosfet
P2HM1102H
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2HM1102H Dual 110A /250V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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/250V
P2HM1102H
300KHz
30i/W
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2HM1102H Dual 110A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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/500V
P2HM1102H
300KHz
30i/W
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P2HM1102H
Abstract: No abstract text available
Text: MOSFET MODULE P2HM1102H Dual 110A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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P2HM1102H
/500V
300KHz
P2HM1102H
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Untitled
Abstract: No abstract text available
Text: MOSFET PDM1102H P2HM1102H 110A 250 V •回路図 CIRCUIT PD P2H Rg MOS SBD 1 D2S1 Rg G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD MOS SBD D2 S1 G1 G2 S2 FRD S2 FRD D1 SBD MOS Rg S1 S1 G1 Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PDM1102H
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PDM1102H
P2HM1102H
Weight220g
Duty50
PDM1102H/P2HM1102H
110TC25
80TC25
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Diode Gfg 33
Abstract: P2HM1102H PDM1102H
Text: MOSFET PDM1102H P2HM1102H 110A 250 V •回路図 CIRCUIT PD P2H Rg MOS SBD 1 D2S1 Rg G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD MOS SBD D2 S1 G1 G2 S2 FRD S2 FRD D1 SBD MOS Rg S1 S1 G1 Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PDM1102H
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PDM1102H
P2HM1102H
Weight220g
Duty50
PDM1102H/P2HM1102H
110TC25
80TC25
Diode Gfg 33
P2HM1102H
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Diode Gfg 33
Abstract: P2HM1102H PDM1102H PDM11
Text: PDM1102H P2HM1102H MOSFET 110A 250V P2HM1102H P2HM1102H PDM1102H 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧
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PDM1102H
P2HM1102H
PDM1102H
Diode Gfg 33
P2HM1102H
PDM11
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Untitled
Abstract: No abstract text available
Text: PDM1102H P2HM1102H MOSFET 110A 250V P2HM1102H P2HM1102H PDM1102H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧
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PDM1102H
P2HM1102H
P2HM1102H
150MAX
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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