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    P5504EVG Search Results

    P5504EVG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P5504EVG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    P5504EVG Niko Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    P5504EVG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P5504EVG

    Abstract: niko-sem
    Text: NIKO-SEM P5504EVG P-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -40V 55mΩ -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P5504EVG SEP-30-2004 P5504EVG niko-sem

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    transistor 123 DL

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM34405AA-N ELM34405AA-N P5504EVG transistor 123 DL

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    p5504

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM34405AA-N ELM34405AA-N P5504EVG p5504

    ELM34405AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34405AA-N •概要 ■特点 ELM34405AA-N 是 P 沟道低输入电容，低工作电 •Vds=-40V 压，低导通电阻的大电流 MOSFET。 ·Id=-5.5A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34405AA-N P5504EVG ELM34405AA

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34405AA-N •概要 ■特長 ELM34405AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5.5A ・ Rds on < 55mΩ (Vgs=-10V) ・ Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM34405AA-N P5504EVG