TA7337
Abstract: 7337A 2N6033
Text: Power Transistors File Number 462 HARR IS S E M I C O N D SE CT OR 2N6032, 2N6033 5 7 E T> 4 3 G 2271 G G m i l 1 WÊ HAS T=.3B-1“5 High-Current, High-Speed High-Power Transistors T E R M IN A L D E S IG N A T IO N S Silicon N -P -N T yp e s fo r H ig h -S p e e d S w itc h in g and
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2N6032,
2N6033
2N6033)
2N6032)
2N6032
2N6033*
P60I9
TA7337
7337A
2N6033
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ta7719
Abstract: N6211 2n6214 2N6211 harris Si923 2N6211 si9234 TA771 2n6213 rca TA7410
Text: File Number 5 0 7 HARRIS 2N6211, 2N6212, 2N6213, 2N6214 SEMICOND SECTOR 5bE D • 4302271 0040515 7 ~3 3 ~ High-Voltage Medium-Power Silicon P-N-P Transistors T3b ■ H AS & For Switching and Amplifier Applications in Military, industrial, and Commerical Equipment
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2N6211,
2N6212,
2N6213,
2N6214
2N6212)
2N6211)
ta7719
N6211
2n6214
2N6211 harris
Si923
2N6211
si9234
TA771
2n6213 rca
TA7410
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RCA-BUX66
Abstract: BUX66A
Text: BUX66, BUX66A, BUX66B, BUX66C File Number High Voltage Silicon P-N-P Transistors 870 TERMINAL DESIGNATIONS For High-Speed Switching and Linear-Amplifier Applications Features: • H igh voltage ratings: V c e o s u s = -150 V max. (BUX66) = -250 V max. (BUX66A)
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BUX66,
BUX66A,
BUX66B,
BUX66C
BUX66)
BUX66A)
BUX66B)
BUX66C)
O-213AA
RCA-BUX66
BUX66A
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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ta7719
Abstract: 2N6214 transistor C730 ta7410 2N6212 clare mercury relay 2N6211 rca 2N6211 P6019 s43a
Text: 3875081 G E S OL I D S T A T E DËTJ 3 07 50 0 1 High-Voltage Power Transistors 0Q171Û4 7 9 W~D S _ 2N6211, 2N6212, 2N6213, 2N6214 File Num ber 507 High-Voltage Medium-Power Silicon P-N-P Transistors
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00171A4
2N6211,
2N6212,
2N6213,
2N6214
2N6214)
2N6213)
2N6212)
2N6211)
ta7719
transistor C730
ta7410
2N6212
clare mercury relay
2N6211 rca
2N6211
P6019
s43a
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30342 ic
Abstract: 30342
Text: 2N6420, 2N6421, 2N6422, 2N6423 File Number 1100 High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: • H ig h v o lta g e r a tin g s : V c e o s u s = -1 7 5 = -2 5 0 = -3 0 0 = -3 0 0
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2N6420,
2N6421,
2N6422,
2N6423
2N6423
P60I9
9ZCS-697TR3
30342 ic
30342
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bdx340
Abstract: BDX43C BPX34 32c52 BPX34C S2274 BDX34 equivalent
Text: BDX34, BDX34A, BDX34B, BDX34C, BDX34D File Num ber 10-Ampere P-N-P Darlington Power Transistors 694 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A Gain of 750 at 3 A (BDX34B, BDX34C, BDX34D) c (F LA N G E ) Ü Features:
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BDX34,
BDX34A,
BDX34B,
BDX34C,
BDX34D
10-Ampere
BDX34A)
bdx340
BDX43C
BPX34
32c52
BPX34C
S2274
BDX34 equivalent
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Untitled
Abstract: No abstract text available
Text: TIP30, TIP30A, TIP30B, TIP30C File N um ber 988 Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: • ■ ■ ■ 30 W at 25° C case tem perature 3 A ra ted c o lle c to r c u rre n t Min. h o f 3 MHz a t -1 0 V, -2 0 0 mA
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TIP30,
TIP30A,
TIP30B,
TIP30C
TIP29-series
IP30A
IP30B
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TLP101
Abstract: C869 npn darlington TIP100 TIP101 TIP102 TIP102 Darlington transistor df qc transistor
Text: G E SOL I» S TA TE 3875081 01 d F | 3ñ750fll Ü G 1 7 3 5 7 G E SOLID STATE 01E 17327 3 D 'J'- ? 3 - 2-J Darlington Power Transistors File N u m b e r 1153 TIP100, TIP101, TIP102
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750fll
TIP100,
TIP101,
TIP102
92CS-39969
O-220AB
RCA-TIP100,
TIP101
TIP102
92CM-31I25RI
TLP101
C869
npn darlington
TIP100
TIP102 Darlington transistor
df qc transistor
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2N6533
Abstract: 2n651 2n6532
Text: 2N6530, 2N6531, 2N6532, 2N6533 File Num ber 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 a t3 A (2 N 6 5 3 1 ) Features: TERMINAL DESIGNATIONS Applications:
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2N6530,
2N6531,
2N6532,
2N6533
2N6532)
2N6533)
TQ-220AB
2N6533
2n651
2n6532
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tl 0741
Abstract: 2N6422 HGP-I004 2N6421 30342 30343 s43a 92CS-30341 2N6420 2N6423
Text: 3875081 G E S O L ID CTATI_— Dï STATE | 3fl75Dôl □017115 1 I 7=53 ' - m g n -vo iiag e Power Transistors File Num ber 1100 2N6420, 2N6421, 2N6422, 2N6423
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2N6420,
2N6421,
2N6422,
2N6423
2N6420)
2N6421)
2N6422)
2N6423)
2N6420
tl 0741
2N6422
HGP-I004
2N6421
30342
30343
s43a
92CS-30341
2N6423
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BOX34B
Abstract: BDX34 equivalent 92G9-2274 BDX33 BDX33A BDX33B BDX33C BDX33D 337505 BDX34A
Text: D l D l F | 3875081 G E SOLID STATE B Û 7 S D Ô 1 0 0 1 7 5 0 1 3 01E 17286 4 | ~ D Y ~ 3 f ~ l7 Darlington Power Transistors_ BDX34, BDX34A, BDX34B, BDX34C, BDX34D File Number
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BDX34,
BDX34A,
BDX34B,
BDX34C,
BDX34D
10-Ampere
BDX34A)
BOX34B
BDX34 equivalent
92G9-2274
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
337505
BDX34A
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92CS-208S6
Abstract: 2N6384 N6385 ta8348 2N6383 RCA
Text: 2N6383, 2N6384, 2N6385 File N u m be r 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: • Operates from 1C without predriver ■ Low leakage at high temperature Applications: ■ Power switching
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2N6383,
2N6384,
2N6385
10-Ampere
TQ-204AA
P60I9
I992i
92CS-208S6
2N6384
N6385
ta8348
2N6383 RCA
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2N6211
Abstract: TA 7719
Text: File Num ber 2N6211, 2N6212, 2N6213, 2N6214 507 High-Voltage Medium-Power Silicon P-N-P Transistors For S w itchin g and A m p lifie r A p p licatio n s in M ilitary, Industrial, and C o m m en ça i Equipm ent Features: • High voltage ratings: V c e o s u s = -400 V max.
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2N6211,
2N6212,
2N6213,
2N6214
2N6214)
2N6213)
2N6212)
92CS-27516
2N6211
2N6211
TA 7719
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n6532
Abstract: No abstract text available
Text: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )
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DQ17HS3
2N6530,
2N6531,
2N6532,
2N6533
-220AB
RCA-2N6530,
P60I9
n6532
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